© 2011 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 300 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ 300 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 94 A
IDM TC= 25°C, Pulse Width Limited by TJM 235 A
IATC= 25°C 47 A
EAS TC= 25°C 500 mJ
PDTC= 25°C 890 W
dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns
TJ -55 to +150 °C
TJM +150 °C
Tstg -55 to +150 °C
TL1.6mm (0.063in) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-268 4 g
TO-247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 300 V
VGS(th) VDS = VGS, ID = 4mA 3.0 5.0 V
IGSS VGS = ±20V, VDS = 0V ±200 nA
IDSS VDS = VDSS, VGS = 0V 50 μA
TJ = 125°C 2 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 36 mΩ
TrenchTM HiperFETTM
Power MOSFETs
IXFT94N30T
IXFH94N30T
DS100383A(11/11)
VDSS = 300V
ID25 = 94A
RDS(on) ≤≤
≤≤
≤ 36mΩΩ
ΩΩ
Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Features
zInternational Standard Packages
z Avalanche Rated
zHigh Current Handling Capability
z Fast Intrinsic Rectifier
zLow RDS(on)
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zDC-DC Converters
zBattery Chargers
zSwitch-Mode and Resonant-Mode
Power Supplies
zDC Choppers
zAC Motor Drives
zUninterruptible Power Supplies
zHigh Speed Power Switching
Applications
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXFH)
G
SD (Tab)
D
TO-268 (IXFT)
S
G
D (Tab)
Preliminary Technical Information
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT94N30T
IXFH94N30T
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 55 95 S
Ciss 11.4 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 917 pF
Crss 116 pF
td(on) 40 ns
tr 14 ns
td(off) 45 ns
tf 12 ns
Qg(on) 190 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 65 nC
Qgd 53 nC
RthJC 0.14 °C/W
RthCS TO-247 0.21 °C/W
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2Ω (External)
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 94 A
ISM Repetitive, Pulse Width Limited by TJM 376 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr 155 ns
IRM 10.6 A
QRM 816 nC
IF = 47A, -di/dt = 100A/μs,
VR = 100V, VGS = 0V
TO-247 Outline
Terminals: 1 - Gate 2 - Drain
3 - Source
TO-268 Outline
Terminals: 1 - Gate 2,4 - Drain
3 - Source
e
∅ P
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
© 2011 IXYS CORPORATION, All Rights Reserved
Fi g . 1. Ou tpu t C h ar ac ter i sti cs @ TJ = 25ºC
0
10
20
30
40
50
60
70
80
90
100
0 0.5 1 1.5 2 2.5 3 3.5
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6
V
5
V
Fig. 2. Extended Output Characteristics @ T J = 25ºC
0
40
80
120
160
200
240
0 5 10 15 20 25
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
5
V
6
V
7
V
Fi g . 3. Ou tp ut C h ar act er i sti cs @ TJ = 125º C
0
10
20
30
40
50
60
70
80
90
100
01234567
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6
V
5
V
4
V
Fig. 4. RDS(on) Normalized to ID = 47A Value vs.
Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50-25 0 255075100125150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 94A
I
D
= 47A
Fig. 5. RDS(on) No r mal iz ed to I D = 47A Val u e vs.
Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
0 40 80 120 160 200 240
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10
V
T
J
= 125ºC
T
J
= 25ºC
Fi g. 6. Maximum D rai n Cu r r ent vs.
Case Temp e r atu r e
0
10
20
30
40
50
60
70
80
90
100
-50-25 0 255075100125150
T
C
- Degrees Centigrade
I
D
- Amperes
IXFT94N30T
IXFH94N30T
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT94N30T
IXFH94N30T
Fi g . 7. I n p u t Admittance
0
20
40
60
80
100
120
140
160
180
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
160
180
0 20 40 60 80 100 120 140 160 180
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
300
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180 200
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 150V
I
D
= 47A
I
G
= 10mA
Fi g . 11. C ap aci tan ce
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Ar ea @ TC = 25ºC
0.1
1
10
100
1000
10 100 1000
V
CE
- Volts
I
C
- Amperes
100µs
1ms
R
DS(on)
Limit
25µs
© 2011 IXYS CORPORATION, All Rights Reserved
Fi g. 14. R esi st i ve Tu r n -o n R i se Ti me vs.
Drain Current
10
12
14
16
18
20
22
24
26
28
45 50 55 60 65 70 75 80 85 90 95
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 2 , V
GS
= 10V
V
DS
= 150V
T
J
= 125ºC
T
J
= 25ºC
Fi g . 15 . R esi sti v e Tu rn -o n S wit ch i n g Ti mes vs.
Gate Re si stance
0
50
100
150
200
250
300
2 4 6 8 10 12 14 16 18
R
G
- Ohms
t
r
- Nanoseconds
0
30
60
90
120
150
180
t d
(
o n
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 150V
I
D
= 94
A
I
D
= 47
A
Fig. 16. Resistive Turn-off Switching T imes vs.
Juncti on Temper atur e
6
8
10
12
14
16
18
20
22
24
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
30
40
50
60
70
80
90
t
d
(
o f f
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 2, V
GS
= 10V
V
DS
= 150V
I
D
= 47A, 94A
Fig . 17. R esistive Tu r n-off Switch ing Ti mes vs.
Drain Current
8
10
12
14
16
18
20
22
24
45 50 55 60 65 70 75 80 85 90 95
I
D
- Amperes
t
f
- Nanoseconds
20
30
40
50
60
70
80
90
100
t d
(
o f f
)
- Nanoseconds
t
f
t
d(off
)
- - - -
R
G
= 2, V
GS
= 10V
V
DS
= 150V
T
J
= 125ºC
T
J
= 25ºC
Fi g. 13. R esi st i ve Tu r n -o n R i se Ti me vs.
Jun ct ion Temp eratu r e
10
12
14
16
18
20
22
24
26
28
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 2 , V
GS
= 10V
V
DS
= 150V
I
D
= 94
A
I
D
= 47
A
Fi g . 18. R es i sti ve Tu r n -o f f Swi tch i ng Times vs.
Gate Re si stan ce
0
50
100
150
200
250
300
350
2 4 6 8 10 12 14 16 18
R
G
- Ohms
t
f
- Nanoseconds
40
80
120
160
200
240
280
320
t d
(
o f f
)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 150V
I
D
= 94A
I
D
= 47A
IXFT94N30T
IXFH94N30T
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT94N30T
IXFH94N30T
IXYS REF: F_94N30T(8G)9-19-11
Fi g . 19. Maxi mum Transi en t Th er mal I mped an ce
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
