Original Creation Date: 12/21/98
Last Update Date: 04/16/99
Last Major Revision Date: 04/06/99
MRLM108A-X-RH REV 1A0 MICROCIRCUIT DATA SHEET
OPERATIONAL AMPLIFIERS (SINGLE) GUARANTEED TO 100K
RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5
General Description
The LM108A is a precision operational amplifier having specifications a factor of ten
better than FET amplifiers over a -55 C to +125 C temperature range.
The device operates with supply voltages from +2V to +20V and has sufficient supply
rejection to use unregulated supplies. Although the circuit is interchangeable with and
uses the same compensation as the LM101A, an alternate compensation scheme can be used to
make it particularly insensitive to power supply noise and to make supply bypass
capacitors unnecessary.
The low current error of the LM108A makes possible many designs that are not practical
with conventional amplifiers. In fact, it operates from 10M Ohms source resistances,
introducing less error than devices like the 709 with 10K Ohms sources. Integrators with
drifts less than 500 uV/sec and analog time delays in excess of one hour can be made using
capacitors no larger than 1uF.
NS Part Numbers
LM108AHRQML
LM108AHRQMLV
LM108AJ-8RQML
LM108AJ-8RQMLV
LM108AJRQML
LM108AJRQMLV
LM108AWGRQML
LM108AWGRQMLV
LM108AWRQML
LM108AWRQMLV
Industry Part Number
LM108A
Prime Die
LM108A
Controlling Document
SEE FEATURES SECTION
Processing
MIL-STD-883, Method 5004
Quality Conformance Inspection
MIL-STD-883, Method 5005
Subgrp Description Temp ( C)
o
1 Static tests at +25
2 Static tests at +125
3 Static tests at -55
4 Dynamic tests at +25
5 Dynamic tests at +125
6 Dynamic tests at -55
7 Functional tests at +25
8A Functional tests at +125
8B Functional tests at -55
9 Switching tests at +25
10 Switching tests at +125
11 Switching tests at -55
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MICROCIRCUIT DATA SHEET
MRLM108A-X-RH REV 1A0
Features
CONTROLLING DOCUMENT:
LM108AHRQML 5962R9863702QGA
LM108AHRQMLV 5962R9863702VGA
LM108AJ-8RQML 5962R9863702QPA
LM108AJ-8RQMLV 5962R9863702VPA
LM108AJRQML 5962R9863702QCA
LM108AJRQMLV 5962R9863702VCA
LM108AWGRQML 5962R9863702QZA
LM108AWGRQMLV 5962R9863702VZA
LM108AWRQML 5962R9863702QHA
LM108AWRQMLV 5962R9863702VHA
2
MICROCIRCUIT DATA SHEET
MRLM108A-X-RH REV 1A0
(Absolute Maximum Ratings)
(Note 1)
Supply Voltage +22V
Power Dissipation
(Note 2) 330mW @ +125 CMETAL CAN 400mW @ +125 CCERDIP, 14 Lead 400mW @ +125 CCERDIP, 8 Lead 330mW @ +125 CCERPACK, 10 Lead 330mW @ +125 CCERAMIC SOIC
Differential Input Current
(Note 3) +10mA
Differential Input Voltage
(Note 5) +30V
Input Voltage
(Note 4) +20V
Output Short-Circuit Duration Continuous
Operating Temperature Range -55 C to +125 C
Storage Temperature Range -65 C to +150 C
Thermal Resistance
ThetaJA 150 C/W METAL CAN (Still Air) 86 C/W (500LF/Min Air flow) 94 C/W CERDIP, 14 Lead (Still Air) 55 C/W (500LF/Min Air flow) 120 C/W CERDIP, 8 Lead (Still Air) 68 C/W (500LF/Min Air flow) 225 C/W CERPACK, 10 Lead (Still Air) 142 C/W (500LF/Min Air flow) 225 C/W CERAMIC SOIC (Still Air) 142 C/W (500LF/Min Air flow)
ThetaJC 38 C/W METAL CAN 13 C/W CERDIP, 14 Lead 17 C/W CERDIP, 8 Lead 21 C/W CERPACK, 10 Lead 21 C/W CERAMIC SOIC
Package Weight
(Typical) 990mg METAL CAN 2180mg CERDIP, 14 Lead 1090mg CERDIP, 8 Lead 225mg CERPACK, 10 Lead 210mg CERAMIC SOIC
Maximum Junction Temperature 175 C
Soldering Information 300 C(Soldering, 10 seconds)
ESD Tolerance
(Note 6) 2000V
3
MRLM108A-X-RH REV 1A0 MICROCIRCUIT DATA SHEET
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Operating Ratings indicate conditions for which the device is functional, but do not
guarantee specific performance limits. For guaranteed specifications and test
conditions, see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed. Some performance characteristics may degrade
when the device is not operated under the listed test conditions.
Note 2: The maximum power dissipation must be derated at elevated temperatures and is
dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to
ambient thermal resistance), and TA (ambient temperature). The maximum allowable
power dissipation at any temperature is Pdmax = (Tjmax - TA) /ThetaJA or the number
given in the Absolute Maximum Ratings, whichever is lower.
Note 3: The inputs are shunted with back-to-back diodes for overvoltage protection.
Therefore, excessive current will flow if a differential input voltage in excess of
1V is applied between the inputs unless some limiting resistance is used.
Note 4: For supply voltages less than +20V, the absolute maximum input voltage is equal to
the supply voltage.
Note 5: This rating is +1.0V unless resistances of 2K Ohms or greater are inserted in series
with the inputs to limit current in the input shunt diodes to the maximum allowable
value.
Note 6: Human body model, 1.5K Ohms in series with 100pF.
4
MRLM108A-X-RH REV 1A0 MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: +Vcc = +20V, Vcm = 0V, Rs = 50 Ohms
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
Vio Input Offset
Voltage +Vcc = 35V, -Vcc = -5V, Vcm = -15V -0.5 0.5 mV 1
-1 1 mV 2, 3
+Vcc = 5V, -Vcc = -35V, Vcm = 15V -0.5 0.5 mV 1
-1 1 mV 2, 3
-0.5 0.5 mV 1
-1 1 mV 2, 3
+Vcc = +5V, -Vcc = -5V -0.5 0.5 mV 1
-1 1 mV 2, 3
Delta
Vio/Delta
T
Temperature
Coeffient of
Input Offset
Voltage
25 C < TA < +125 C 1 -5 5 uV/C 2
25 C < TA < -55 C 1 -5 5 uV/C 3
Iio Input Offset
Current +Vcc = 35V, -Vcc = -5V, Vcm = -15V -0.2 0.2 nA 1
-0.4 0.4 nA 2, 3
+Vcc = 5V, -Vcc = -35V, Vcm = 15V -0.2 0.2 nA 1
-0.4 0.4 nA 2, 3
-0.2 0.2 nA 1
-0.4 0.4 nA 2, 3
+Vcc = +5V, -Vcc = -5V -0.2 0.2 nA 1
-0.4 0.4 nA 2, 3
Delta
Iio/Delta
T
Temperature
Coeffient of
Input Offset
Current
25 C < TA < +125 C 1 -2.5 2.5 pA/C 2
25 C < TA < -55 C 1 -2.5 2.5 pA/C 3
5
MRLM108A-X-RH REV 1A0 MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS(Continued)
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: +Vcc = +20V, Vcm = 0V, Rs = 50 Ohms
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
+Iib Input Bias
Current +Vcc = 35V, -Vcc = -5V, Vcm = -15V -0.1 2 nA 1
-1 2 nA 2
-0.1 3 nA 3
+Vcc = 5V, -Vcc = -35V, Vcm = 15V -0.1 2 nA 1
-1 2 nA 2
-0.1 3 nA 3
-0.1 2 nA 1
-1 2 nA 2
-0.1 3 nA 3
+Vcc = +5V, -Vcc = -5V -0.1 2 nA 1
-1 2 nA 2
-0.1 3 nA 3
-Iib Input Bias
Current +Vcc = 35V, -Vcc = -5V, Vcm = -15V -0.1 2 nA 1
-1 2 nA 2
-0.1 3 nA 3
+Vcc = 5V, -Vcc = -35V, Vcm = 15V -0.1 2 nA 1
-1 2 nA 2
-0.1 3 nA 3
-0.1 2 nA 1
-1 2 nA 2
-0.1 3 nA 3
+Vcc = +5V, -Vcc = -5V -0.1 2 nA 1
-1 2 nA 2
-0.1 3 nA 3
+PSRR Power Supply
Rejection Ratio +Vcc = 10V, -Vcc = -20V -16 16 uV/V 1, 2,
3
-PSRR Power Supply
Rejection Ratio +Vcc = 20V, -Vcc = -10V -16 16 uV/V 1, 2,
3
CMRR Common Mode
Rejection Ratio Vcm = +15V 96 dB 1, 2,
3
Ios+ Short Circuit
Current +Vcc = +15V, -Vcc = -15V, t < 25mS -15 mA 1, 2,
3
6
MRLM108A-X-RH REV 1A0 MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS(Continued)
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: +Vcc = +20V, Vcm = 0V, Rs = 50 Ohms
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
Ios- Short Circuit
Current +Vcc = +15V, -Vcc = -15V, t < 25mS 15 mA 1, 2,
3
Icc Power Supply
Current +Vcc = +15V, -Vcc = -15V 0.6 mA 1, 2
0.8 mA 3
AC/DC PARAMETERS
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: +Vcc = +20V, Vcm = 0V, Rs = 50 Ohms
AC: +Vcc = +20V, Vcm = 0V, Rs = 50 Ohms
+Vop Output Voltage
Swing Rl = 10K Ohms 16 V 4, 5,
6
-Vop Output Voltage
Swing Rl = 10K Ohms -16 V 4, 5,
6
Avs+ Open Loop Voltage
Gain Rl = 10K Ohms, Vout = +15V 3 80 V/mV 4
3 40 V/mV 5, 6
Avs- Open Loop Voltage
Gain Rl = 10K Ohms, Vout = -15V 3 80 V/mV 4
3 40 V/mV 5, 6
Avs Open Loop Voltage
Gain +Vcc = +5V, Rl = 10K Ohms, Vout = +2V 3 20 V/mV 4, 5,
6
TR(tr) Transient
Response Rise
Time
Rl = 10K Ohms, Cl = 100pF, f < 1KHz,
Vin = +50mV 4 1000 nS 9, 10,
11
TR(os) Transient
Response
Overshoot
Rl = 10K Ohms, Cl = 100pF, f < 1KHz,
Vin = +50mV 4 50 % 9, 10,
11
Sr(+) Slew Rate Av = 1, Vin = -5V to +5V 0.05 V/uS 9, 10,
11
Sr(-) Slew Rate Av = 1, Vin = +5V to -5V 0.05 V/uS 9, 10,
11
NI(BB) Noise Broadband BW = 10Hz to 5KHz, Rs = 0 Ohms 2 15 uVrms 9
NI(PC) Noise Popcorn BW = 10Hz to 5KHz, Rs = 100K Ohms 2 40 uVpk 9
7
MRLM108A-X-RH REV 1A0 MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS: DRIFT VALUES
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: +Vcc = +20V, Vcm = 0V, Rs = 50 Ohms. "Delta calculations performed on JAN S and QMLV devices at group
B, subgroup 5 only".
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
Vio Input Offset
Voltage -0.25 0.25 mV 1
+Iib Input Bias
Current -0.5 0.5 nA 1
-Iib Input Bias
Current -0.5 0.5 nA 1
DC/AC PARAMETERS: POST RADIATION LIMITS +25 C (SEE NOTE 5)
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: +Vcc = +20V, Vcm = 0V, Rs = 50 Ohms.
+Iib Input Bias
Current +Vcc = 35V, -Vcc = -5V, Vcm = -15V 5 5.0 nA 1
+Vcc = 5V, -Vcc = -35V, Vcm = -15V 5 5.0 nA 1
5 5.0 nA 1
+Vcc = +5V, -Vcc = -5V 5 5.0 nA 1
-Iib Input Bias
Current +Vcc = 35V, -Vcc = -5V, Vcm = -15V 5 5.0 nA 1
+Vcc = 5V, -Vcc = -35V, Vcm = -15V 5 5.0 nA 1
5 5.0 nA 1
+Vcc = +5V, -Vcc = -5V 5 5.0 nA 1
Iio Input Offset
Current +Vcc = 35V, -Vcc = -5V, Vcm = -15V 5 0.5 nA 1
+Vcc = 5V, -Vcc = -35V, Vcm = -15V 5 0.5 nA 1
5 0.5 nA 1
+Vcc = +5V, -Vcc = -5V 5 0.5 nA 1
Note 1: Calculated parameter.
Note 2: Test on either A360, J273 AC or bench test.
Note 3: Datalog reading in K = V/mV.
Note 4: Bench test.
Note 5: Pre and post irradiation limits are identical to those listed under AC and DC
electrical characteristics except as listed in the Post Radiation Limits Table. These
parts may be dose rate sensitive in a space environment and demonstrate enhanced low
dose rate effect. Radiation end point limits for the noted parameters are guaranteed
only for the conditions as specified in MIL-STD-883, Method 1019.5.
8
MICROCIRCUIT DATA SHEET
MRLM108A-X-RH REV 1A0
Graphics and Diagrams
GRAPHICS# DESCRIPTION
H08CRF METAL CAN (H), TO-99, 8LD, .200 DIA P.C. (P/P DWG)
J08ARL CERDIP (J), 8 LEAD (P/P DWG)
J14ARH CERDIP (J), 14 LEAD (P/P DWG)
P000253A CERAMIC SOIC (WG), 10 LEAD (PINOUT)
P000310A METAL CAN (H), TO-99, 8LD, .200 DIA P.C. (PINOUT)
P000311A CERDIP (J), 14 LEAD (PINOUT)
P000312A CERDIP (J), 8 LEAD (PINOUT)
P000431A CERPACK (W), 10 LEAD (PINOUT)
W10ARG CERPACK (W), 10 LEAD (P/P DWG)
WG10ARC CERAMIC SOIC (WG), 10 LEAD (P/P DWG)
See attached graphics following this page.
9
N
MIL/AEROSPACE OPERATIONS
2900 SEMICONDUCTOR DRIVE
SANTA CLARA, CA 95050
1 10
2 9
3 8
4 7
5 6
N/C
N/C
IN-
IN+
N/C V-
OUTPUT
V+
COMP 2
COMP 1
LM108AWG
10 - LEAD CERAMIC SOIC
TOP VIEW
CONNECTION DIAGRAM
P000253A
N
N
N
N
MIL/AEROSPACE OPERATIONS
2900 SEMICONDUCTOR DRIVE
SANTA CLARA, CA 95050
1 10
2 9
3 8
4 7
5 6
N/C
N/C
IN-
IN+
N/C V-
OUTPUT
V+
COMP 2
COMP 1
LM108AW
10 - LEAD CERPACK
TOP VIEW
CONNECTION DIAGRAM
P000431A
MICROCIRCUIT DATA SHEET
MRLM108A-X-RH REV 1A0
Revision History
Rev ECN # Rel Date Originator Changes
0A0 M0003181 04/16/99 Rose Malone Initial MDS Release: MRLM108A-X-RH, Rev. 0A0 - Rad
Hard Data Sheet.
1A0 M0003364 04/16/99 Rose Malone Update MDS: MRLM108A-X-RH, Rev. 0A0 to MRLM108A-X-RH,
Rev. 1A0. Update Thermal Resistance - Cerpack (Still
Air) from 150 C/W to 225 C/W, Electricals: DC and
Drift Values and Post Radiation Section - Removed
reference to Rs=5 Mohms from Iio, +Iib, -Iib.
Correction made to correlate with test program.
10
