MDD56-12N1B Standard Rectifier Module VRRM = 2x 1200 V I FAV = 71 A VF = 1.14 V Phase leg Part number MDD56-12N1B Backside: isolated 2 1 3 Features / Advantages: Applications: Package: TO-240AA Package with DCB ceramic Improved temperature and power cycling Planar passivated chips Very low forward voltage drop Very low leakage current Diode for main rectification For single and three phase bridge configurations Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors Isolation Voltage: 3600 V~ Industry standard outline RoHS compliant Soldering pins for PCB mounting Base plate: DCB ceramic Reduced weight Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130702a MDD56-12N1B Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 1300 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 1200 V IR reverse current VF forward voltage drop min. typ. VR = 1200 V TVJ = 25C 200 A VR = 1200 V TVJ = 150C 10 mA I F = 100 A TVJ = 25C 1.21 V 1.48 V 1.14 V I F = 200 A TVJ = 125 C I F = 100 A I F = 200 A I FAV average forward current TC = 100C 180 sine I F(RMS) RMS forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 1.45 V T VJ = 150 C 71 A 150 A TVJ = 150 C 0.80 V 3 m 0.51 K/W K/W 0.20 TC = 25C 245 W t = 10 ms; (50 Hz), sine TVJ = 45C 1.40 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.51 kA t = 10 ms; (50 Hz), sine TVJ = 150 C 1.19 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.29 kA t = 10 ms; (50 Hz), sine TVJ = 45C 9.80 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 9.49 kAs TVJ = 150 C 7.08 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25C Data according to IEC 60747and per semiconductor unless otherwise specified 6.87 kAs 27 pF 20130702a MDD56-12N1B Package Ratings TO-240AA Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 200 Unit A -40 125 C -40 150 C Weight 90 MD mounting torque MT terminal torque d Spp/App d Spb/Apb VISOL creepage distance on surface | striking distance through air t = 1 minute 2.5 4 2.5 4 Nm Nm terminal to terminal 13.0 9.7 mm terminal to backside 16.0 16.0 mm 3600 V 3000 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL 1 mA Circuit Diagram Part Number YYYYWWx Date Code FKT Production Code Ordering Standard Data Matrix Part Number MDD56-12N1B Equivalent Circuits for Simulation I V0 R0 Marking on Product MDD56-12N1B * on die level Delivery Mode Box Code No. 458066 T VJ = 150 C Rectifier V 0 max threshold voltage 0.8 V R 0 max slope resistance * 1.8 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 6 Data according to IEC 60747and per semiconductor unless otherwise specified 20130702a MDD56-12N1B Outlines TO-240AA 2 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 1 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20130702a MDD56-12N1B Rectifier 2000 200 104 VR = 0 V DC 180 sin 120 60 30 50 Hz, 80% V RRM TVJ = 45C 1500 150 TVJ = 125C IFSM TVJ = 45C IFAVM 2 It 1000 100 [A] [A2s] [A] TVJ = 150C 500 50 0 10-3 10-2 10-1 100 103 101 1 2 t [s] 3 6 8 0 10 0 Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration 50 100 150 200 TC [C] t [ms] Fig. 3 Maximum forward current at case temperature Fig. 2 I2t versus time (1-10 ms) 200 RthJA [K/W] 0.8 1 150 1.2 1.5 PT 2 100 2.5 [W] 3 DC 180 sin 120 60 30 50 0 0 20 40 80 4 0 50 ITAVM, IFAVM [A] 100 150 200 TA [C] Fig. 4 Power dissipation vs. onstate current and ambient temperature (per diode) 800 RthKA [K/W] 0.1 0.15 600 0.2 R L 0.3 Ptot 0.4 400 0.6 [W] 0.7 Circuit B2 2x MDD56 200 0.8 0 0 50 100 150 200 IdAVM [A] 0 50 100 150 200 TA [C] Fig. 6 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature; R = resistive load,L = inductive load IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130702a MDD56-12N1B Rectifier 1000 RthJA [KW] 0.1 0.15 800 0.2 0.25 Ptot 600 [W] 400 0.3 0.4 0.5 200 0 0.6 Circuit B6 3x MDD56 0 50 100 150 200 250 0 50 IDAVM [A] 100 150 200 TA [C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 0.8 RthJC for various conduction angles d: d RthJC [K/W] 30 60 120 0.6 180 DC ZthJC 0.4 DC 0.51 180 0.53 120 0.55 60 0.58 30 0.62 [K/W] Constants for ZthJC calculation: i Rthi [K/W] 0.2 0 10-3 10-2 10-1 100 101 102 ti [s] 1 0.013 0.0015 2 0.055 0.0450 3 0.442 0.4850 103 t [s] Fig. 7 Transient thermal impedance junction to case (per diode) RthJK for various conduction angles d: d RthJC [K/W] DC 0.71 180 0.73 120 0.75 60 0.78 30 0.82 1.0 30 60 0.8 120 180 ZthJK DC 0.6 Constants for ZthJC calculation: [K/W] 0.4 i Rthi [K/W] 1 2 3 4 0.2 0 10-3 10-2 10-1 100 101 102 0.013 0.055 0.442 0.200 ti [s] 0.0015 0.0450 0.4850 1.2500 103 t [s] Fig. 8 Transient thermal impedance junction to heatsink (per thyristor) IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130702a