MDD56-12N1B
Phase leg
Standard Rectifier Module
2 1 3
Part number
MDD56-12N1B
Backside: isolated
FAV
F
VV1.14
RRM
71
1200
=
V= V
I= A
2x
Features / Advantages: Applications: Package:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● Diode for main rectification
● For single and three phase
bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
TO-240AA
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
3600
IXYS reserves the right to change limits, conditions and dimensions. 20130702aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
MDD56-12N1B
V = V
kA²s
kA²s
kA²s
kA²s
Symbol Definition
Ratings
typ. max.
I
R
V
IA
V
F
1.21
R0.51 K/W
R
min.
71
V
RSM
V
200T = 25°C
VJ
T = °C
VJ
mA10V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
100
P
tot
245 WT = 25°C
C
RK/W
100
1200
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Conditions Unit
1.48
T = 25°C
VJ
150
V
F0
V0.80T = °C
VJ
150
r
F
3mΩ
V1.14T = °C
VJ
I = A
F
V
100
1.45
I = A
F
200
I = A
F
200
threshold voltage
slope resistance for power loss calculation only
µA
125
V
RRM
V1200
max. re pe titiv e reverse b lockin g volt a ge T = 25°C
VJ
IA150
C
J
27
j
unction capacitance V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
150
1.40
1.51
7.08
6.87
kA
kA
kA
kA
1.19
1.29
9.80
9.49
1200
RMS forward current
F(RMS)
FAV
180° sine
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1300
0.20
IXYS reserves the right to change limits, conditions and dimensions. 20130702aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
MDD56-12N1B
Ratings
Circuit Diagram
Part Number
YYYYWWx FKT
Date Code Production Code Data Matrix
Package
T
VJ
°C
M
D
Nm4
mounting torque 2.5
T
stg
°C125
storage temperature -40
Weight g90
Symbol Definition typ. max.min.Conditions
virt ua l j un ction temp erature
Unit
M
T
Nm4
terminal torque 2.5
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
13.0 9.7
16.0 16.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 200 A
per terminal
150-40
terminal to terminal
TO-240AA
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
MDD56-12N1B 458066Box 6MDD56-12N1BStandard
3000
3600
ISOL
threshold voltage V0.8
mΩ
V
0 max
R
0 max
slope resistance * 1.8
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Rectifier
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130702aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
MDD56-12N1B
2 1 3
Outlines TO-240AA
IXYS reserves the right to change limits, conditions and dimensions. 20130702aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
MDD56-12N1B
I
FSM
[A]
2000
1500
500
0
t [s]
10-3 10-2 10-1 100101
Fig. 1 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
TVJ = 45°C
TVJ = 150°C
50 Hz, 80% VRRM
1000
VR = 0 V
t [ms]
I
2
t
[A
2
s]
104
103
12 36810
TVJ = 45°C
TVJ = 125°C
Fig. 2 I
2
t versus time (1-10 ms) Fig. 3 Maximum forward current
at case temperature
200
100
50
0
0 50 100 150
I
FAVM
[A]
T
C
[°C]
DC
180° sin
120°
60°
30°
150
200
Fig. 4 Power dissipation vs. onstate current and ambient temperature (per diode)
DC
180° sin
120°
60°
30°
T
A
[°C]I
TAVM
, I
FAVM
[A]
200
150
100
50
0
P
T
[W]
RthJA [K/W]
0.8
1
1.2
1.5
2
2.5
3
4
0 50 100 2000 20 40 80 150
Fig. 6 Single phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature; R = resistive load,L = inductive load
RthKA [K/W]
0.1
0.15
0.2
0.3
0.4
0.6
0.7
0.8
0 50 100 200
T
A
[°C]I
dAVM
[A]
0 50 100
P
tot
[W]
200
0
400
600
800
Circuit
B2
2x MDD56
RL
150 200 150
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130702aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
MDD56-12N1B
P
tot
[W]
I
DAVM
[A]
Circuit
B6
3x MDD56
R
thJA
[KW]
0.1
0.15
0.2
0.25
0.3
0.4
0.5
0.6
T
A
[°C]
Fig. 6 Three phase rectifier bridge: Power dissipation versus
direct output current and ambient temperature
1000
800
400
0 50 100 0 50 100 200
0
200
600
150 150200 250
Fig. 7 Transient thermal impedance junction to case (per diode)
t [s]
Z
thJC
[K/W]
30°
60°
120°
180°
DC
0.8
0.4
0
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
0.2
0.6
30°
60°
120°
180°
DC
Z
thJK
[K/W]
Fig. 8 Transient thermal impedance junction to heatsink (per thyristor)
t [s]
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
0.6
0.4
0.2
0
1.0
0.8
R
thJC
for various conduction angles d:
dR
thJC
[K/W]
DC 0.51
180° 0.53
120° 0.55
60° 0.58
30° 0.62
Constants for Z
thJC
calculation:
iR
thi
[K/W] t
i
[s]
1 0.013 0.0015
2 0.055 0.0450
3 0.442 0.4850
R
thJK
for various conduction angles d:
dR
thJC
[K/W]
DC 0.71
180° 0.73
120° 0.75
60° 0.78
30° 0.82
Constants for Z
thJC
calculation:
iR
thi
[K/W] t
i
[s]
1 0.013 0.0015
2 0.055 0.0450
3 0.442 0.4850
4 0.200 1.2500
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130702aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
