ABB Semiconductors AG reserves the right to change specifications without notice.
V
DSM = 1600
V
ITAVM = 726
A
ITRMS = 1140
A
ITSM = 9240
A
V
T0 =1.03
V
r
T= 0.483 mΩ
ΩΩ
Ω
Phase Control Thyristor
5STP 06E1600
D
oc
. N
o
.
5S
YA1
05
4-
0
1
Sep
.
0
1
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Industry standard housing
Blockin
g
Part Number 5STP 06E1600 5STP 06E1400 5STP 06E1200 Conditions
VDRM VRRM 1600 V 1400 V 1200 V f = 50 Hz, tp = 10ms, Note 1
VRSM1 1700 V 1500 V 1300 V tp = 5ms, single pulse, Note 1
IDRM ≤ 40 mA VDRM
IRRM ≤ 40 mA VRRM
Tj = 125°C
dV/dtcrit 1000 V/µs linear. to 0.67 x VDRM, Tj = 125°C
Note 1: Derating factor of 0.13% per °C is applicable for Tj below 25°C.
Mechanical data
FMMounting force nom. 8 kN
min. 6 kN
max. 10 kN
aAcceleration
Device unclamped
Device clamped
50
100
m/s2
m/s2
mWeight 0.09kg
DSSurface creepage distance 9 mm
DaAir strike distance 8 mm
5STP 06E1600
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1054-01 Sep. 01 page 2 of 3
On-state
ITAVM Max. average on-state current 726 A Half sine wave, TC = 70°C
ITRMS Max. RMS on-state current 1140 A
ITSM Max. peak non-repetitive 9240 A tp
=
10 ms Tj = 125°C
surge current 9900 A tp
=
8.3 ms After surge:
I2t Limiting load integral 427 kA2stp
=
10 ms VD = VR = 0V
490 kA2stp
=
8.3 ms
VTOn-state voltage 1.51 V IT
=
1000 A
VT0 Threshold voltage 1.03 V IT
=
500 - 3000 A Tj = 125°C
rTSlope resistance 0.483 mΩ
IHHolding current <500 mA T
j
=
25°C
>10 mA T
j
=
125°C
Switching
di/dtcrit Critical rate of rise of on-state 500 A/µs Cont. f = 50 Hz VD ≤ 0.67⋅VDRM , Tj = 125°C
current 1000 A/µs ITRM = 1500 ASingle Pulse
IFG = 2 A, tr = 0.5 µs
tdDelay time ≤3.0 µs VD = 0.4⋅VDRM IFG = 2 A, tr = 0.5 µs
tqTurn-off time ≤150 µs VD ≤ 0.67⋅VDRM ITRM = 500 A, Tj = 125°C
dvD/dt = 20V/µs VR = 50 V, diT/dt = -10 A/µs
Qrr Recovery charge min 540 µAs
max 580 µAs
Triggering
VGT Gate trigger voltage 3.0 V Tj = 25°, VD = 10 A, IT = 3 A
IGT Gate trigger current 150 mA Tj = 25°, VD = 10 A, IT = 3 A
VGD Gate non-trigger voltage 0.25 V Tj = 25°, VD = VDRM
IGD Gate non-trigger current 10 mA Tj = 25°, VD = VDRM
VFGM Peak forward gate voltage 10 V
IFGM Peak forward gate current 7.5 A
VRGM Peak reverse gate voltage 5 V
PG(AV) Mean forward gate power 2 W
PGM Peak forward gate power 30 W
5STP 06E1600
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG Doc. No. 5SYA1054-01 Sep. 01
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax +41 (0)62 888 6306
Email abbsem@ch.abb.com
Internet www.abbsem.com
Thermal
Tjmax Max. operating junction temperature
range
125 °C
Tstg Storage temperature range -40…140 °C
RthJC Thermal resistance 80 K/kW Anode side cooled
junction to case 80 K/kW Cathode side cooled
40 K/kW Double side cooled
RthCH Thermal resistance case to 20 K/kW Single side cooled
heat sink 10 K/kW Double side cooled
