3*8 Preferred Device ' 5 '1 Features * Pb-Free Package is Available http://onsemi.com MAXIMUM RATINGS (TA = 25C) Symbol Value Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) 500 mA PD 200 mW 1.6 mW/C -55 to +150 C Rating Peak Forward Surge Current Pulse Width = 10 s Total Power Dissipation, One Diode Loaded TA = 25C Derate above 25C Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Operating and Storage Junction Temperature Range TJ, Tstg Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Ambient One Diode Loaded Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) MARKING DIAGRAM 3 1 2 A6D SC-70 CASE 419 STYLE 2 A6 D = Specific Device Code = Date Code ORDERING INFORMATION Device Package Shipping SC-70 3000 / Tape & Reel SC-70 (Pb-Free) 3000 / Tape & Reel Symbol Max Unit BAS16WT1 RJA 625 C/W BAS16WT3G For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2004 June, 2004 - Rev. 5 162 Publication Order Number: BAS16WT1/D BAS16WT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max - - - - 715 866 1000 1250 - - - 1.0 50 30 Unit Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) VF Reverse Current (VR = 75 V) (VR = 75 V, TJ = 150C) (VR = 25 V, TJ = 150C) IR Capacitance (VR = 0, f = 1.0 MHz) CD - 2.0 pF Reverse Recovery Time (IF = IR = 10 mA, RL = 50 ) (Figure 1) trr - 6.0 ns Stored Charge (IF = 10 mA to VR = 6.0 V, RL = 500 ) (Figure 2) QS - 45 PC Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) (Figure 3) VFR - 1.75 V http://onsemi.com 163 mV A BAS16WT1 / D > ! ? ?,, ? ! 6 5 > 3> - ,, / Figure 1. Reverse Recovery Time Equivalent Test Circuit OSCILLOSCOPE R 10 MW C 7 pF ! - 7*4 - / D ? > - + 1 ; C . 6 5 > ? 3> - 1 / Figure 2. Stored Charge Equivalent Test Circuit - / C - 1! 3> -, ? > 6 5 > / D Figure 3. Forward Recovery Voltage Equivalent Test Circuit http://onsemi.com 164 ! BAS16WT1 $ 5 ! " 5 =1 " "1 "4 "2 " - * - 6 - 6 5 2! " 5 !! " " " 5 ! 5 ! Figure 4. Forward Voltage 1 - - - 6 - 6 Figure 5. Leakage Current "42 $; " 5 ! " $ - $ 5 2! $ $ % $ *$ $& "41 "4 "!4 "! 1 4 - - - 6 - 6 Figure 6. Capacitance http://onsemi.com 165 2 !