Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 5
162 Publication Order Number:
BAS16WT1/D
3*8
Preferred Device
' 5'1
Features
•Pb−Free Package is Available
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Value Unit
Continuous Reverse Voltage VR75 V
Recurrent Peak Forward Current IR200 mA
Peak Forward Surge Current
Pulse Width = 10 s
IFM(surge) 500 mA
Total Power Dissipation,
One Diode Loaded TA = 25°C
Derate above 25°C
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
PD200
1.6
mW
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to
+150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient
One Diode Loaded
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
RJA 625 °C/W
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping†
ORDERING INFORMATION
BAS16WT1 SC−70 3000 / Tape & Reel
SC−70
CASE 419
STYLE 2
MARKING
DIAGRAM
A6 = Specific Device Code
D = Date Code
A6D
BAS16WT3G SC−70
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
2
3
BAS16WT1
http://onsemi.com
163
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
VF
−
−
−
−
715
866
1000
1250
mV
Reverse Current
(VR = 75 V)
(VR = 75 V, TJ = 150°C)
(VR = 25 V, TJ = 150°C)
IR
−
−
−
1.0
50
30
A
Capacitance
(VR = 0, f = 1.0 MHz)
CD−2.0 pF
Reverse Recovery Time
(IF = IR = 10 mA, RL = 50 ) (Figure 1)
trr −6.0 ns
Stored Charge
(IF = 10 mA to VR = 6.0 V, RL = 500 ) (Figure 2)
QS −45 PC
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns) (Figure 3)
VFR −1.75 V
BAS16WT1
http://onsemi.com
164
Figure 1. Reverse Recovery Time Equivalent Test Circuit
Figure 2. Stored Charge Equivalent Test Circuit
Figure 3. Forward Recovery Voltage Equivalent Test Circuit
-
/ D
3>
>
?
/
?
?,,
,,
!
!
6 5 >
-
3>
>
/ D
?
1 /
-
-
?
- +.
! 7*4
1 ; C
6 5 >
-
/
?
/ D
>
3>
-
-,
C1!
!
6 5 >
OSCILLOSCOPE
R 10 MW
C 7 pF
BAS16WT1
http://onsemi.com
165
" "1
- * -6 -6
"4 "2 " "
"
"
5 2!°
- - -6 -6
"
"
"
" 1 !
"42
- - -6 -6
"41
"4
"!4
"!
$$%$;
142
$*$$&
Figure 4. Forward Voltage Figure 5. Leakage Current
Figure 6. Capacitance
5 =1°
5 !°
5 !°
5 !°
5 2!°
5 !!°
5 !°
$-$$µ
