2SA2206 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2206 Power Amplifier Applications Power Switching Applications Unit: mm Low collector emitter saturation voltage : VCE (sat) = -0.5 V (max) (IC = -1A) High-speed switching: tstg = 300 ns (typ.) Complementary to 2SC6124 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -7 V DC IC -2 A Pulse ICP -4 A IB -0.5 A t = 10 s PC 2.5 DC PC 1.0 Tj 150 C Tstg -55 to 150 C Collector current (Note 1) Base current Collector power dissipation (Note 2) Junction temperature Storage temperature range W 1 : BASE 2 : COLLECTOR (HEAT SINK) 3 : EMITTER JEDEC JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ) Note 1: Ensure that the channel temperature does not exceed 150C during use of the device. Note 2: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-07-23 2SA2206 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Conditions Min Typ. Max Unit Collector cut-off current ICBO VCB = -80 V, IE = 0 -100 nA Emitter cut-off current IEBO VEB = -7 V, IC = 0 -100 nA V (BR) CEO IC = -10 mA, IB = 0 -80 V hFE (1) VCE = -2 V, IC = -1 mA 80 hFE (2) VCE = -2 V, IC = -0.5 A 100 200 hFE (3) VCE = -2 V, IC = -1 A 60 VCE (sat) (1) IC = -0.5 A, IB = -50 mA -0.3 V VCE (sat) (2) IC = -1 A, IB = -100 mA -0.5 V VBE (sat) IC = -1 A, IB = -100 mA -1.5 V VCB = -10 V, IE = 0,f = 1MHZ 25 pF VCE = -2 V, IC = -500 mA 100 MHz 30 300 40 Collector emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Cob Transition frequency fT Rise time 20 s tr Storage time tstg IB1 0 Switching time I Input B1 IB1 = IB2 = 100 mA Fall time tf Output IB2 24 DC current gain IB2 Collector-emitter breakdown voltage ns VCC -24 V Duty cycle 1% Marking Part No. (or abbreviation code) 4 Lot code K Note 4 Note 4 : A line beside a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-07-23 2SA2206 IC - VCE -2 hFEIC -100 1000 -50 Ta=100 -1.6 hFE -10 -1.2 -8 -0.8 -6 -4 -0.4 25 100 DC current gain Collector current IC (A) -20 -55 10 Common emitter Ta = 25C Single Pulse test IB=-2A Common emitter VCE = -2 V Single Pulse test 1 0 0 -0.4 -0.8 -1.2 -1.6 Collector-emitter voltage VCE -2 -0.001 (V) -0.01 Base -emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) -10 Ta=100 25 -55 -0.01 -0.001 -0.01 -0.1 -1 Collector current Common emitter IC/IB = 10 Single Pulse test -3 -55 -1 Ta=100 25 -0.3 IC -0.001 -10 -0.01 (A) fT (MHz) Common emitter VCE = -2 V Single Pulse test Transition frequency IC -1.6 -1.2 -1 IC -10 (A) fT- IC 1000 -2 -0.1 Collector current IC - VBE (A) (A) -0.1 -0.001 Collector current IC -10 VBE (sat) - IC Common emitter IC/IB = 10 Single Pulse test -0.1 -1 Collector current VCE (sat) - IC -1 -0.1 25 Ta=100 -0.8 -55 -0.4 Common emitter Ta = 25C Single Pulse test -10 100 -5 VCE=-2V 10 1 0 0 -0.3 -0.6 -0.9 Base-emitter voltage -1.2 VBE -0.001 -1.5 (V) -0.01 -0.1 Collector current 3 -1 IC -10 (A) 2009-07-23 2SA2206 rthtw PC (W) PC - Ta Collector power dissipation Transient thermal impedance rth (/W) 1000 100 10 Curves apply only to limited areas of thermal resistance. Single nonrepetitive pulse Ta = 25C Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) 1.2 Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) 1 0.8 0.6 0.4 0.2 1 0.001 0.01 0.1 1 Pulse width 10 tw 1000 100 0 0 (s) 50 100 150 200 Ambient temperature Ta (C) Safe Operating Area CobVCB -10 Ta=25 IE=0 f=1MHz 10 ms* IC max. (pulsed)* 1 ms* 100s* 10s* 100 ms* IC max. (continuous) 100 IC (A) -1 10 Collector current Collector output capacitance Cob (pF) 1000 1 -0.1 -1 Collector-base voltage -10 VCB -100 DC operation Ta=25 -0.1 -0.01 (V) -0.001 *: Single nonrepetitive pulse Ta = 25C Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren't mounted on an FR4 board (glass-epoxy, 1.6 mm thick, Cu area: 645 mm2). These characteristic curves must be derated linearly with increase in temperature. -0.1 -1 Collector-emitter voltage 4 VCEO max -10 VCE -100 (V) 2009-07-23 2SA2206 RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application that Product will be used with or for. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. * Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2009-07-23