2SA2206 - Toshiba America Electronic Components, Inc.

2SA2206

2009-07-23

TOSHIBA Transistor Silicon PNP Epitaxial Type

2SA2206

Power Amplifier Applications

Power Switching Applications

Low collector emitter saturation voltage

: VCE (sat) = -0.5 V (max) (IC = -1A)

High-speed switching: tstg = 300 ns (typ.)

Complementary to 2SC6124

Absolute Maximum Ratings (Ta = 25°C)

Characteristic Symbol Rating Unit

Collector-base voltage VCBO -80 V

Collector-emitter voltage VCEO -80 V

Emitter-base voltage VEBO -7 V

DC IC -2 A

Collector current (Note 1)

Pulse ICP -4 A

Base current IB -0.5 A

t = 10 s PC 2.5

Collector power dissipation

(Note 2) DC PC 1.0

Junction temperature Tj 150 °C

Storage temperature range Tstg −55 to 150 °C

Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.

Note 2: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2)

Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC ⎯

JEITA SC-62

TOSHIBA 2-5K1A

Weight: 0.05 g (typ)

1 : BASE

2 : COLLECTOR (HEAT SINK)

3 : EMITTER

2SA2206

2009-07-23

Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Conditions Min Typ. Max Unit

Collector cut-off current ICBO V

CB = -80 V, IE = 0 ⎯ ⎯ -100 nA

Emitter cut-off current IEBO V

EB = -7 V, IC = 0 ⎯ ⎯ -100 nA

Collector-emitter breakdown voltage V (BR) CEO IC = -10 mA, IB = 0 -80 ⎯ ⎯ V

hFE (1) V

CE = -2 V, IC = -1 mA 80 ⎯ ⎯

hFE (2) V

CE = -2 V, IC = -0.5 A 100 ⎯ 200

DC current gain

hFE (3) V

CE = -2 V, IC = -1 A 60 ⎯ ⎯

VCE (sat) (1) IC = -0.5 A, IB = -50 mA ⎯ ⎯ -0.3 V

Collector emitter saturation voltage

VCE (sat) (2) IC = -1 A, IB = -100 mA ⎯ ⎯ -0.5 V

Base-emitter saturation voltage VBE (sat) I

C = -1 A, IB = -100 mA ⎯ ⎯ -1.5 V

Collector output capacitance Cob V

CB = -10 V, IE = 0,f = 1MHZ ⎯ 25 ⎯ pF

Transition frequency fT V

CE = -2 V, IC = -500 mA ⎯ 100 ⎯ MHz

Rise time tr ⎯ 30 ⎯

Storage time tstg ⎯ 300 ⎯

Switching time

Fall time tf

IB1 = IB2 = 100 mA

Duty cycle ≤ 1% ⎯ 40 ⎯

Marking

Note 4 : A line beside a Lot No. identifies the indication of product Labels.

[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product.

The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the

restriction of the use of certain hazardous substances in electrical and electronic equipment.

4 K

Part No. (or abbreviation code)

Lot code Note 4

IB1

VCC

≈

-24 V

Output

24Ω

IB2

IB1

Input

IB2

2SA2206

2009-07-23

-1

-0.001

-0.01

-0.1

Collector current IC (A)

Collector-emitter saturation voltage

VCE (sat) (V)

VCE (sat) – IC

-0.001 -0.01 -0.1 -1 -10

Common emitter

IC/IB = 10

Single Pulse test

−55℃

25℃

Ta=100℃

DC current gain hFE

hFE－IC

100

1000

-0.001 -0.01 -0.1 -1 -10

Collector current IC (A)

Common emitter

VCE = -2 V

Single Pulse test

−55℃

25℃

Ta=100℃

Base -emitter saturation voltage

VBE (sat) (V)

-0.1

-1

-10

Collector current IC (A)

VBE (sat) – IC

-0.001 -0.01 -0.1 -1 -10

Common emitter

IC/IB = 10

Single Pulse test

−55℃

Ta=100℃

25℃

-0.3

-3

Collector current IC (A)

Collector-emitter voltage VCE (V)

IC – VCE

-2

-0.4

-0.4 -0.8 -1.2 -1.6

-0.8

-1.2

-1.6

Common emitter

Ta = 25°C

Single Pulse test

-50

-20

-10

-8

-6

-4

IB=-2ｍA

-100

IC – VBE

Collector current IC (A)

Base-emitter voltage VBE (V)

0 -0.3 -0.6 -1.2 -0.9

-2

-0.4

-0.8

Common emitter

VCE = -2 V

Single Pulse test

Ta=100℃

−55℃

25℃

-1.2

-1.6

-1.5

1000

100

Collector current IC (A)

Transition frequency fT (MHz)

fT– IC

-0.001 -0.01 -0.1 -1 -10

Common emitter

Ta = 25°C

Single Pulse test

VCE=-2V

-5

-10

2SA2206

2009-07-23

Transient thermal impedance

rth (℃/W)

100

0.001 0.01 0.1 1 100

10 1000

Pulse width tw (s)

rth－tw

1000

Curves apply only to limited areas of thermal

resistance.

Single nonrepetitive pulse Ta = 25°C

Mounted on an FR4 board

(glass-epoxy; 1.6 mm thick; Cu area, 645 mm2)

Collector output capacitance Cob (pF)

Cob－VCB

100

1000

-0.1 -1 -10 -100

Collector-base voltage VCB (V)

Ta=2 5℃

IE=0

f=1MHz

Collector power dissipation PC (W)

PC – Ta

0.4

0.6

0.2

0.8

50 100 150 200

1.2

Ambient temperature Ta (°C)

Mounted on an FR4 board

(glass-epoxy; 1.6 mm thick;

Cu area, 645 mm2)

Collector current IC (A)

Safe Operating Area

-0.1 -10 -100

Collector-emitter voltage VCE (V)

-1

-0.001

-0.01

-0.1

-10

-1

100 ms*

10 ms* 1 ms*

IC max. (continuous)

IC max. (pulsed)*

DC operation

Ta=25℃

VCEO max

100

10μs*

*: Single nonrepetitive pulse

Ta = 25°C

Note that the curves for 100 ms, 10 s and DC

operation will be different when the devices aren’t

mounted on an FR4 board (glass-epoxy, 1.6 mm thick,

Cu area: 645 mm2).

These characteristic curves must be derated linearly

with increase in temperature.

2SA2206

2009-07-23

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