IPD5N25S3-430
OptiMOS™-T Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTC=25°C, VGS=10V 5 A
TC=100°C, VGS=10V1) 4
Pulsed drain current1) ID,pulse TC=25°C 20
Avalanche energy, single pulse1) EAS ID=1.3A 13 mJ
Avalanche current, single pulse IAS -1.3 A
Reverse diode dv/dtdv/dt6 kV/µs
Gate source voltage VGS - ±20 V
Power dissipation Ptot TC=25°C 41 W
Operating and storage temperature Tj,Tstg - -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
VDS 250
V
RDS(on),max 430 mW
ID5 A
Product Summary
Type Package Marking
IPD5N25S3-430 PG-TO252-3- 3N25430
PG-TO252-3-313
Rev. 1.0 page 1 2012-10-18
IPD5N25S3-430
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics1)
Thermal resistance, junction - case RthJC - - - 3.7 K/W
SMD version, device on PCB RthJA minimal footprint - - 40
6 cm2cooling area2) - - 62
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID= 1mA 250 - - V
Gate threshold voltage VGS(th) VDS=VGS,ID=13µA 2.0 3.0 4.0
Zero gate voltage drain current IDSS VDS=250V, VGS=0V,
Tj=25°C - 0.1 1 µA
VDS=250V, VGS=0V,
Tj=125°C2) - 10 100
Gate-source leakage current IGSS VGS=20V, VDS=0V - 1 100 nA
Drain-source on-state resistance RDS(on) VGS=10V, ID=5A - 370 430 mW
Values
Rev. 1.0 page 2 2012-10-18
IPD5N25S3-430
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
1)
Input capacitance Ciss - 317 422 pF
Output capacitance Coss - 117 156
Reverse transfer capacitance Crss - 6 13
Turn-on delay time td(on) - 3 - ns
Rise time tr- 2 -
Turn-off delay time td(off) - 8 -
Fall time tf- 5 -
Gate Charge Characteristics
1), 3)
Gate to source charge Qgs - 1.5 2 nC
Gate to drain charge Qgd - 1.3 2.7
Gate charge total Qg- 4.7 6.2
Gate plateau voltage Vplateau - 4.7 - V
Reverse Diode
Diode continous forward current1) IS- - 5 A
Diode pulse current1) IS,pulse - - 20
Diode forward voltage VSD VGS=0V, IF=5A,
Tj=25°C - 0.9 1.2 V
Reverse recovery time1) trr VR=125V, IF=5A,
diF/dt=100A/µs - 70 - ns
Reverse recovery charge1) Qrr - 159 - nC
3)
Devices thermal performance determined according to EIA JESD 51-14
"Transient Dual Interface Test Method For The Measurement Of The Thermal Resistance"
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
TC=25°C
1) Defined by design. Not subject to production test.
Values
VGS=0V, VDS=25V,
f=1MHz
VDD=125V, VGS=10V,
ID=5A, RG=3.5W
VDD=200V, ID=5A,
VGS=0 to 10V
Rev. 1.0 page 3 2012-10-18
IPD5N25S3-430
1 Power dissipation 2 Drain current
Ptot = f(TC); VGS ≥ 6 V ID= f(TC); VGS ≥ 6 V
3 Safe operating area 4 Max. transient thermal impedance
ID= f(VDS); TC= 25 °C; D= 0 ZthJC = f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
1
10
100
1 10 100 1000
VDS [V]
ID[A]
single pulse
0.01
0.05
0.1
0.5
100
10-1
10-2
10-3
10-4
10-5
10-6
101
100
10-1
10-2
tp[s]
ZthJC [K/W]
0
10
20
30
40
50
0 50 100 150 200
TC[°C]
Ptot [W]
0
3
6
0 50 100 150 200
TC[°C]
ID[A]
Rev. 1.0 page 4 2012-10-18
IPD5N25S3-430
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID= f(VDS); Tj= 25 °C RDS(on) = f(ID); Tj= 25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance
ID= f(VGS); VDS = 6V RDS(on) = f(Tj); ID= 5 A; VGS = 10 V
parameter: Tj
0
200
400
600
800
1000
1200
-60 -20 20 60 100 140 180
Tj[°C]
RDS(on) [mW]
5 V
5.5 V
6 V
6.5 V
10 V
0
2
4
6
8
10
12
14
16
18
20
0 5 10 15 20 25 30
VDS [V]
ID[A]
5 V
5.5 V
6 V
6.5 V
10 V
300
320
340
360
380
400
420
440
0 1 2 3 4 5
ID[A]
RDS(on) [mW]
-55 °C
25 °C
175 °C
0
2
4
6
8
10
12
14
16
18
20
3 3.5 4 4.5 5 5.5 6
VGS [V]
ID[A]
Rev. 1.0 page 5 2012-10-18
IPD5N25S3-430
9 Typ. gate threshold voltage 10 Typ. capacitances
VGS(th) = f(Tj); VGS =VDS C= f(VDS); VGS = 0 V; f= 1 MHz
parameter: ID
11 Typical forward diode characteristicis 12 Avalanche characteristics
IF = f(VSD)IA S= f(tAV)
parameter: Tjparameter: Tj(start)
25 °C
175 °C
100
101
102
103
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD [V]
IF[A]
13 µA
130 µA
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
Tj[°C]
VGS(th) [V]
Ciss
Coss
Crss
102
103
0 50 100 150 200 250
VDS [V]
C[pF]
101
25 °C
100 °C
150 °C
0.01
0.1
1
10
0.1 1 10 100 1000 10000
tAV [µs]
IAV [A]
25 °C
175 °C
10-1
100
101
102
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD [V]
IF[A]
Rev. 1.0 page 6 2012-10-18
IPD5N25S3-430
13 Avalanche energy 14 Drain-source breakdown voltage
EAS = f(Tj); ID= 45 A VBR(DSS) = f(Tj); ID= 1 mA
15 Typ. gate charge 16 Gate charge waveforms
VGS = f(Qgate); ID= 5 A pulsed
parameter: VDD
VGS
Qgate
Vgs(th)
Qg(th)
Qgs Qgd
Qsw
Qg
230
240
250
260
270
280
290
-55 -15 25 65 105 145
Tj[°C]
VBR(DSS) [V]
50 V 200 V
0
1
2
3
4
5
6
7
8
9
10
0 1 2 3 4 5
Qgate [nC]
VGS [V]
1.3 A
0.65 A
0.325 A
0
1
2
3
4
5
25 75 125 175
Tj[°C]
EAS [mJ]
Rev. 1.0 page 7 2012-10-18
IPD5N25S3-430
Infineon Technologies AG
81726 Munich, Germany
©
Infineon Technologies AG 2012
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices, please contact
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www.infineon.com
).
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For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
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If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0 page 8 2012-10-18
IPD5N25S3-430
Revision History
Version
Revision 0.1
Revision 0.2
Revision 1.0
Changes
Initial target data sheet
Preliminary data sheet
Final Data Sheet
Date
21.10.2010
24.07.2012
18.10.2012
Rev. 1.0 page 9 2012-10-18