Mini PROFET® BSP 452
Semiconductor Group 1 08.96
MiniPROFET
• High-side switch
• Short-circuit protection
• Input protection
• Overtemperature protection with hysteresis
• Overload protection
• Overvoltage protection
• Switching inductive load
• Clamp of negative output voltage with inductive loads
• Undervoltage shutdown
• Maximum current internally limited
• Electrostatic discharge (ESD) protection
• Reverse battery protection1)
Package: SOT 223
Type Ordering code
BSP 452 Q67000-S271
Application
• µC compatible power switch for 12 V DC grounded loads
• All types of resistive, inductive and capacitive loads
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,monolithically
integrated in Smart SIPMOS technology. Fully protected by embedded protection functions.
Blockdiagramm:
IN
3Rin
+ Vbb
Signal GND
ESD
MINI-PROFET
OUT
GND
Logic
Voltage
sensor
Voltage
source
Charge pump
Level shifter Temperature
sensor
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
2
4
1
Load GND
Load
V
Logic
Overvoltage
protection
ESD-
Diode
1) With resistor RGND=150 Ω in GND connection, resistor in series with IN connections reverse load current
limited by connected load.
123
4
Mini PROFET® BSP 452
Semiconductor Group 2
Pin Symbol Function
1 OUT O Output to the load
2 GND - Logic ground
3 IN I Input, activates the power switch in case of logical high signal
4 Vbb + Positive power supply voltage
Maximum Ratings at
T
j = 25 °C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage
V
bb 40 V
Load current self-limited
I
L
I
L
(
SC
)
A
Maximum input voltage2)
V
IN -5.0...
V
bb V
Maximum input current
I
IN ±5 mA
Inductive load switch-off energy dissipation,
single pulse
I
L = 0.5A ,
T
A = 150°C
(not tested, specified by design)
E
AS 0.5 J
Load dump protection3)
V
LoadDump=
U
A+
V
s
R
L= 24Ω
R
I=2Ω ,
t
d=400ms, IN= low or high,
U
A=12V
R
L= 80Ω
(not tested, specified by design)
V
Load dump4)47
67 V
Electrostatic dischar
g
e capabilit
y
(
ESD
)
5) PIN 3
PIN 1,2,4
V
ESD ±1
±2kV
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150 °C
Max. power dissipation (DC)6)
T
A = 25 °C
P
tot 1.8 W
Thermal resistance chip - soldering point:
chip - ambient:6)
R
thJS
R
thJA
7
70 K/W
2) At VIN > Vbb, the input current is not allowed to exceed ±5 mA.
3) Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a 150 Ω resistor in the GND connection
A resistor for the protection of the input is integrated.
4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5) HBM according to MIL-STD 883D, Methode 3015.7
6) BSP 452 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection
Mini PROFET® BSP 452
Semiconductor Group 3
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at
T
j = 25 °C,
V
bb = 13.5V unless otherwise specified min typ max
Load Switching Capabilities and Characteristics
On-state resistance (pin 4 to 1)
I
L = 0.5 A,
V
in = high
T
j = 25°C
T
j = 150°C
R
ON --
-- 0.16
-- 0.2
0.4 Ω
Nominal load current (pin 4 to 1)7)
ISO Standard:
V
ON =
V
bb -
V
OUT = 0.5 V
T
S = 85 °C
I
L(ISO) 1.7 -- -- A
Turn-on time to 90%
V
OUT
Turn-off time to 10%
V
OUT
R
L = 24 Ω
t
on
t
off
--
-- 60
60 100
150 µs
Slew rate on
10 to 30%
V
OUT,
R
L = 24 Ωd
V
/dton -- 2 4 V/µs
Slew rate off
70 to 40%
V
OUT,
R
L = 24 Ω-d
V
/dtoff -- 2 4 V/µs
Input
Allowable input voltage range, (pin 3 to 2)
V
IN -3.0 --
V
bb V
Input turn-on threshold voltage
T
j = -40...+150°C
V
IN(T+) -- -- 3.5 V
Input turn-off threshold voltage
T
j = -40...+150°C
V
IN(T-) 1.5 -- -- V
Input threshold hysteresis
∆V
IN(T) -- 0.5 -- V
Off state input current (pin 3)
V
IN(off) = 1.2 V
T
j = -40...+150°C
I
IN(off) 10 -- 60 µA
On state input current (pin 3)
V
IN(on) = 3.0 V to
V
bb
T
j = -40...+150°C
I
IN(on) 10 -- 100 µA
Input resistance
R
IN 1.5 2.8 3.5 kΩ
7
)
I
L(ISO) characterizes the MOSFET part of the device and may be higher than the shortcircuit current
I
L(SC) of the whole device
Mini PROFET® BSP 452
Semiconductor Group 4
Parameter and Conditions Symbol Values Unit
at
T
j = 25 °C,
V
bb = 13.5V unless otherwise specified min typ max
Operating Parameters
Operating voltage8)
T
j =-40...+150°C
V
bb(on) 5.0 -- 34 V
Undervoltage shutdown
T
j =-40...+150°C
V
bb(under) 3.5 -- 5 V
Undervolta
g
e restart
T
j
=-40...+25°C
T
j =+150°C
V
bb(u rst) -- -- 6.5
7.0 V
Undervolta
g
e restart of char
g
e pumpe
see diagram page 7
V
bb(ucp) -- 5.6 7 V
Undervolta
g
e h
y
steresis
∆
V
bb(under) =
V
bb(u rst) -
V
bb(under) ∆
V
bb(under) -- 0.3 -- V
Overvoltage shutdown
T
j =-40...+150°C
V
bb(over) 34 -- 42 V
Overvoltage restart
T
j =-40...+150°C
V
bb(o rst) 33 -- -- V
Overvoltage hysteresis
T
j =-40...+150°C ∆
V
bb(over) -- 0.7 -- V
Standby current (pin 4),
V
in = low
T
j =-40...+150°C
I
bb(off) -- 10 25 µA
Operating current (pin 2),
V
in = 5 V
I
GND -- 1 1.6 mA
leakage current (pin 1)
V
in = low
T
j =-40...+25°C
T
j =150°C
I
L(off) -- 2 5
7µA
Protection Functions
Current limit (pin 4 to 1)
T
j = 25°C
V
bb = 20V
T
j = -40...+150°C
I
L(SC) 0.7
0.7 1.5
-- 2
2.4 A
Overvoltage protection
I
bb=4mA
T
j =-40...+150°C
V
bb(AZ) 41 -- -- V
Output clamp (ind. load switch off)
at
V
OUT=
V
bb-
V
ON
(
CL
)
,
I
bb = 4mA
V
ON(CL) 41 47 -- V
Thermal overload trip temperature
T
jt 150 -- -- °C
Thermal hysteresis
∆
T
jt -- 10 -- K
Inductive load switch-off energy dissipation9)
T
j Start = 150 °C, single pulse,
I
L = 0.5 A,
V
bb = 12 V
(not tested, specified by design)
E
AS -- -- 0.5 J
Reverse battery (pin 4 to 2) 10)
(not tested, specified by design) -
V
bb -- -- 30 V
8) At supply voltage increase up to
V
bb= 5.6 V typ without charge pump,
V
OUT ≈
V
bb - 2 V
9) While demagnetizing load inductance, dissipated energy in PROFET is
E
AS= ∫
V
ON(CL) *
i
L(t) dt, approx.
E
AS= 1/2 *
L
*
I
2
L * (
V
ON(CL)
V
ON(CL) -
V
bb )
10) Requires 150 Ω resistor in GND connection. Reverse load current (through intrinsic drain-source diode) is normally limited by the
connected load.
Mini PROFET® BSP 452
Semiconductor Group 5
Max. allowable power dissipation
Ptot = f (TA,TSP)
Ptot [W]
0
2
4
6
8
10
12
14
16
18
0 25 50 75 100 125 150
TA
TSP
TA, TSP[°C]
On state resistance (Vbb-pin to OUT-pin)
RON = f (Tj); Vbb = 13.5 V; IL = 0.5 A
RON [Ω]
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
-50 -25 0 25 50 75 100 125 150
98%
Tj [°C]
Current limit characteristic
IL(SC) = f (Von); (Von see testcircuit)
IL(SC) [A]
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
02468101214
25°C
150°C
-40°C
Von [V]
Typ. input current
IIN = f (VIN); Vbb = 13,5 V
IIN [µA]
0
5
10
15
20
25
30
35
40
45
50
0 2 4 6 8 10 12 14
-40°C
+150°C
+25°C
VIN [V]
Mini PROFET® BSP 452
Semiconductor Group 6
Typ. operating current
IGND = f (Tj); Vbb = 13,5 V; VIN = high
IGND [mA]
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
-50 -25 0 25 50 75 100 125 150
Tj [°C]
Typ. standby current
Ibb(off) = f (Tj); Vbb = 13,5 V; VIN = low
Ibb(off) [µA]
0
1
2
3
4
5
6
7
8
-50 -25 0 25 50 75 100 125 150
Tj [°C]
Typ. overload current
IL(lim) = f (t); Vbb = 13,5 V, no heatsink, Param.: Tjstart
IL(lim) [A]
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50 0 50 100 150 200 250 300 350 400
-40°C
+150°C +25°C
t [ms]
Short circuit current
IL(SC) = f (Tj); Vbb = 13,5 V
IL(SC) [A]
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50 -25 0 25 50 75 100 125 150
Tj [°C]
Mini PROFET® BSP 452
Semiconductor Group 7
Typ. input turn on voltage threshold
VIN(T+) = f (Tj);
VIN(T+) [V]
0
0.5
1
1.5
2
2.5
3
-50 -25 0 25 50 75 100 125 150
13V
Tj [°C]
Typ. on-state resistance (Vbb-Pin to Out-Pin)
RON = f (Vbb,IL); IL=0.5A, Tj = 25°C
RON [mΩ]
0
50
100
150
200
250
300
0 5 10 15 20 25
Vbb [V]
Figure 6: Undervoltage restart of charge pumpe
VON [V]
Vbb(under)
Vbb (u rs t)
Vbb(over)
Vbb(o rs t)
Vbb(u c p)
V
bb [V]
charge pump starts at Vbb(ucp) about 7 V typ.
Test circuit
Mini PROFET® BSP 452
Semiconductor Group 8
Package:
all dimensions in mm.
SOT 223/4:
