Power Transistors 2N6674, 2N6675, RJH6674, RJUH6675 HARRIS SEMICOND SECTOR 10-A SwitchiiaXt Power Transistors High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications Features: @ Fast switching speed High voltage ratings: Voex=350 V to 450 V @ Low Vce(Sat) at lh=10 A Applications: & Off-line power supplies High-voltage inverters & Switching regulators The 2N6674, 2N6675, RJH6674, and RJH6675 SwitchMax series of silicon n-p-n power transistors feature high-voltage capability, fast switching speeds, and low saturation voltages, together with high safe-operating-area (SOA) ratings. They are specially designed for off-line power supplies, converter circuits, and pulse-width-modulated regulators. These high- voltage, high-speed transistors are tested for parameters that are essential to the design of high-power switching circuits. Switching times, including inductive turn-off time, and MAXIMUM RATINGS, Absolute-Maximum Values: e7e D T-33 -15 File Number 1164 - WME 43020271 OO20054 7 MMHAS TERMINAL DESIGNATIONS c - (FLANGE) > 2N6674 2N6875 2 2 92Cs- 27516 JEDEC TO-204AA E COLLECTOR O RJH6674 FLANGE RJH6675 TOP VIEW JEDEC TO-218AC 9268-40257 saturation voltages are specified at 100C to provide information necessary for worst-case design. The 2N6674 and 2N6675 transistors are supplied in steel JEDEC TO-204AA hermetic packages. The RUH6674 and RJH6675 transistors are supplied In JEDEC TO-218AC plastic packages. RJH6674 RJH6675 2N6674 2N6675 Veev Vae=-1.5 Vo. cece eee eee eee 450 650 450 650 Vv "Vcex(Clamped) . Vee=-1. SV eee eee 350 450 350 450 v Sk (3. 300 400 300 400 Vv "VERO. cece eee eee ee eee 7 Vv Io(Sat) oo. cece e eee ee eee 10 A NG cece cece cece ence een eee 15 A TOM cece cece cece eee e aeons 20 A "la ccc cece een e eee eee eeaeeeeee 5 A "Py Te up to 25 C oo. eee eee eee 175 Ww Te above 25C, derate linearly 1.4 1.4 1 1 wc "Tag. Ts -65 to 150 -65 to 200 9 ___ C T . At distance > 1/16 in. (1.58 mm) from seating plane for 10s max........... _ 235 - C T t At distance = 1/8" in (3.17 mm) from seating plane for 10s max ........... - 235 C In accordance with JEDEC registration data (2N6674, 2N6675 only). 2-286Power Transistors ua 2N6674, 2N6675, RJH6674, RJH6675 a ELECTRICAL CHARACTERISTICS - 3 3 ~/5 c TEST CONDITIONS LIMITS VOLTAGE | CURRENT | 2 ON nl CHARACTERISTIC V de Ade eee7a | meiitsars | UNITS a Vee | Vee | tc | ts |Min.[Max.| Min. [Max. Q Tc=25C mM QoQ . 450 | -1.5 {o1}] ao lev 650 | -1.5 | |[o1] ma a *Tleso -7 0 |,T2;j]2 nm * | Vceo(sus) 0.22 / o |300] |400{ Yj mu "| hee 2 108 8 {| 20] 8 | 20 5 + [Vae(sat) tor | 2 |]15| [15 m ely t 108 2 /1]/4 1 x ce(sat) ie} 5 || 5s {| 5 V Vcex | (Clamped Es) -4 | 10 | 2 |350] | 450] L=50 wH, Res=2 Q 30 5.9 ijpfrarl- a Iso 400 0.25 4/[a] s ul * [heel f=5 MHz 10 1 3 | 101 3 | 10 ~ fr 10 1 15 | 50 | 15 | 50 MHz ru * | Cove f=0.1 MHz 10 150 | 500 { 150 | 500 pF *| ted -6 10 2 {01} | 04 *[td -6 10 2 j}06}] [06 | td -6 10 ge | |25] | 25 w 1 td -6 10 ae $05) | 05 us | te e Vec=135 Vv, VV L=50 wH, Re S -6 40 | 2e | jos] /05 a 13.8 Q, Collector clamped to Vcex | za Pd Tc= 100C oO Vv ty 450 | -1.5 fij-[- mA = ce 650 | -1.5 |--j-|1 lJ * | Vce(sat) 108 2 {|2);- [2 V ltd -6 10 2 /{1]]1 "7 td -6 10 ge ||4{]| 4 i fe -6 | to | 2 |[i|[|1 o~ "Ite us a Voe=135 Vv, = L=50 uH, Re S -6 | 10 | 2 | jos} |os 13.5 Q, Collector clamped to Vcex *[R@ic 2N6674, 2N6675 10 5 ii{j]1 C/W Rc RJH6674, RJH6675 10 5 |0.71| [0.71| C/w Pulsed pulse duration=300 ys, duty factor < 2%. PBCAUTION: The sustaining voltage Vceo(sus) and Vcex MUST NOT be measured on a curve tracer. *In accordance with JEDEC registration data (2N6674, 2N6675 only). Vice value. FV ce=135 V, tp=20 ys. t51=-le2. 2-287Power Transistors 2N6674, 2N6675, RJH6674, RJH6675 T- 33-19 FOR SINGLE | (CURVES MUST BE OERATED COLLECTOR CURRENT V (2N6674 ,RJHGG74) Vog(MAX.)=400V( 2N6675,RJH 6675) 4 6 I 2 4 6 8\9 2 800 2 4 6 Fo00 COLLECTOR-TO-EMITTER VOLTAGE (Voge) V 92CM-30419R3 2e7E D MM 4302271 GO2005b O MBHAS Fig. 1 - Maximum operating areas for all types (To=25C). CURRENT OERATING AT CONSTANT VOLTAGE ONLY TO THE DiSS!PATON-LIMITED MAXINUM-OPERATING -AREA CURVES 00 = TO -EMITTER VOLTAGE [te L we DERATE THE SPECIFIED VALUE FOR Ic MAX, . foe 7 WS id Wu t : = ; oO Ww i = CASE TEMPERATURE (Tc1-*C CASE TEMPERATURE {To}-"C Lid sacs-zeess 925+19663 Fig. 2 Dissipation and Is, derating curves for 2N6674 Fig. 3 Dissipation and Is derating curves for and 2N6675. RJH6674 and RJH6675. eH ae o< <x <= an 1 1 0 wo PULSE WIDTH (1g) 0 saca-toser COLLECTOR CURRENT (Ic) =A s2ce-30308 Fig. 4 - Typical thermal-response characteristic for all types. Fig. 5 - Typical de beta characteristics for all types. | 2-288Power Transistors 2N6674, 2N6675, RJH6674, RJH6675 7-33 -/5 Tastes 4) Ig 16/5 & > ai 53 a a BS ag 1 4 5 [| -sort] Te a > = ze Ko? 3 2a%G en eo Renee cn O4 4 1 to foo COLLECTOR CURRENT (Tc) A COLLECTOR CURRENT{I) A 9205-30366 9205-30376 Fig. 6 - Typicalcollector-to-emitter saturation voltage charac- Fig. 7 - Typical base-to-emitter saturation voltage character- teristics for all types. istics for all types. 27E D Mm 4302271 OO20057 2 MMHAS CASE TEMPERATURE (Te)*25C 2 52sec +TO> VOLTAGE (Voce) *10V SIGNAL FREQUENCY +5 WHE ~ < 6 I 2 3 3 2 5 s rn] o4 < 5 3 3 6 2 4 8 0 04 08 2 1s 2 ar 0 4 COLLECTOR CURRENT (Ie) A COLLECTOR-TO-EMITTER VOLTAGE (Vee) - 9203-30377 92Cs-30374 Fig. 8 - Typical small-signal forward current transfer ratio Fig. 9 - Typical output characteristics for all typos. characteristic for all types (=5 MHz). HARRIS SEMICOND SECTOR : a} * (tes the te) nw j 5 : 3 : STORAGE TIME (tg) ps STORAGE TIME (1y}pa RISE, FALL, FOR te ONLY COLLECTOR CURRENT (IghA COLLECTOR CURRENT (Ig) A 92CS- 30373 g2cs-303TS Fig. 10 - Typical saturated-switching-time characteristics at Fig. 11 - Typical saturated-switching-time characteristics at T;=26C as a function of collector current for all T,=100C as a function of collector current for all types. types. 2-289Power Transistors 2N6674, 2N6675, RJH6674, RJH6675 T- 33-/5 (T1008 1g,t34 Yoe a-5V Iga 9A MAX,L*50 pH Yog* 200 V 120 wn z - w a 3 Zz = - 1 a j a a 3 z @ STORAGE TIME (14) STORAGE TIME (tg) p28 2e7E D MM 4302271 0020058 4 MBHAS o 4 6 a 19 12 4 6 90 COLLECTOR CURRENT (Ig) A szcs-sose0 JUNCTION TEMPERATURE (Tj}"C | g2cg-30378 Fig. 12 - Typical saturated-switching-time characteristics at Fig. 13 - Typical saturated-switching-time characteristics as a : T,=100C as a function of collector current for ail function of junction temperature for all types. types. CASE TEMPERATURE (Tc) * 25C l FREQUENCY (ft) 1 MHz 3 4 3, I Ww o z 8 : 5 L- 2N6674, RIH6674 3 & Le", 2NGS75, RIHGG7S 5 3 & Te s 100C 8 2 wy oO 3 4 J 1 1 1 B80 100 200 300-400-800 350-450 CLAMPED COLLECTOR -TO- EMITTER wo ; o = vo! VOLTAGE [Vogy (CLAMPED!] V oO COLLECTOR-TO-BASE VOLTAGE (Veg)V OR 926$~30304R2 EMITTERTO-BASE VOLTAGE Veghv U a2C8-30388 uJ Fig. 14 - Typical common-base input (Cuo) or output (Coro) Fig. 16 - Maximum operating conditions for switching between 1 capacitance characteristics for ail types. saturation and cutoff for all types. YP yp xz = o WU AQU FOR Ip} A R, 213.5 2/30W = NON IND Lj wn 50 pH Wn Qi, Q2 = 2N6354 et Ig CURRENT Q3 = 2N3762 PROBE Q4,Q5, a 0 001 pF Ig CURRENT Q6,Q7 = CA3725 QUAD ow B TRANSISTOR << . ARRAY. x * THIS CONNECTION SHOULD BE MADE AS CLOSE AS POSSIBLE TO COLLECTOR OF TRANSISTOR UNDER TEST ++ SEN? NOTE: GATTERY SYMBOLS Veg, Vai + Yee: Va(CLAMp) INOICATE RIGOROUSLY FILTERED VOLTAGE SOURCES AT THE CIRCUIT TERMINALS TO ACCOMODATE THE FAST tp AND t TIMES AND HIGH CURRENTS PRESENT IN THE CIRCUIT Ve2 == NOTE: SWI CLOSED FOR ty, ts. ty. SWI OPEN FOR t. ADU FOR Tag 92CM-30362R1 tt leot 20 pS MIN FREQ: 500 Hz I Fig. 16 - Circuit for measuring switching times. 2-290Power Transistors 2N6674, 2N6675, RJH6674, RJH6675 HARRIS SEMICOND SECTOR 2?7 D MM 4302271 OOe20059 & MMHAS WAVEFORMS a Ta %O 90% } 33 -/5 AdIO % oJ-1----~-J--~--, wiso% Ipg--L--------- T cg90 % ys0% BS 10 % zhI0% Wra-s "7 x- t= B-c t= -Z teanution * X-W NOTE TRANSITION TIME 10% Voex te 10% Te (PEAK) FROM G0% Ig, TO 90% ig, MUST 92C$-20365R1 BE LESS THAN 0.6 ps. 92CS$- 3038 IRE Fig. 17 - Oscilloscope display for normalized measurement of Fig. 18 - Phase relationship between input and output currents clamped inductive switching time (te). showing reference points for specification of switching times. 2-291