BFT92 PNP Silicon RF Transistor * For broadband amplifiers up to 2 GHz at collector currents up to 30 mA 2 3 * Complementary type: BFR92P (NPN) 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFT92 Marking W1s Pin Configuration 1=B 2=E 3=C Package SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 45 Base current IB 5 Total power dissipation1) Ptot 200 mW Junction temperature Tj 150 C Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 V mA TS 78C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point 2) RthJS 360 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 2005-10-13 BFT92 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. 15 - - V ICES - - 100 A ICBO - - 100 nA IEBO - - 1 A hFE 20 40 70 - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, I E = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 15 mA, VCE = 8 V, pulse measured 2 2005-10-13 BFT92 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 3.5 5 - Ccb - 0.56 0.9 Cce - 0.35 - Ceb - 0.7 - GHz IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure dB F IC = 2 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz - 2 - - 3 - - 13.5 - - 8 - IC = 2 mA, VCE = 8 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum available1) G ma IC = 15 mA, VCE = 8 V, Z S = ZSopt , ZL = ZLopt , f = 900 MHz IC = 15 mA, VCE = 8 V, Z S = ZSopt , ZL = ZLopt , f = 1.8 GHz |S 21e|2 Transducer gain dB IC = 15 mA, VCE = 8 V, Z S = ZL = 50 , f = 900 MHz - 11.5 - - 6 - IC = 15 mA, VCE = 8 V, Z S = ZL = 50 , f = 1.8 GHz 1G 1/2) ma = |S21 / S12| (k-(k-1) 3 2005-10-13 BFT92 SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 4.5354 10.983 1.1172 47.577 1.206 1.5939 1.7785 32.171 0.013277 1.2 2.0779 0 3 fA V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = NK = FC = 98.533 0.016123 10.297 0.019729 7.9562 1.5119 0.79082 0.30227 0 0.3 0 0 0.75167 A A V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.90551 12.196 1.2703 0.024709 0.79584 0.66749 0.32167 0.21451 922.07 0.3 0.75 1.11 300 fA fA mA V fF V eV K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut fur Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 0.84 0.51 0.69 0.61 0 0.49 84 165 nH nH nH nH nH nH fF fF fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes 4 2005-10-13 BFT92 Total power dissipation Ptot = (TS) Permissible Pulse Load RthJS = (t p) 10 3 300 mW RthJS Ptot K/W 200 10 2 150 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 100 50 0 0 20 40 60 80 100 120 C 10 1 -7 10 150 10 -6 10 -5 10 -4 10 -3 10 -2 TS s 10 0 tp Permissible Pulse Load Collector-base capacitance Ccb= (VCB) Ptotmax/P totDC = (tp) f = 1MHz 10 2 1.6 - 1.2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 Ccb Ptotmax /PtotDC pF 1 0.8 0.6 0.4 0.2 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 0 0 tp 4 8 12 16 V 22 VCB 5 2005-10-13 BFT92 Third order Intercept Point IP3=(IC) Transition frequency fT= (IC) (3rd order, Output, Z S = ZL=50 ) VCE = parameter VCE = parameter, f = 900MHz 28 6 8V dBm GHz 10V 24 3V 5 22 2V 4.5 8V 4 fT IP3 5V 20 3.5 3V 16 3 2V 14 2.5 12 2 10 1.5 8 1 6 0.5 18 1V 1V 4 0 4 8 12 16 20 mA 0 0 28 0.7V 5 10 15 mA 20 IC IC Power gain Gma, Gms = (IC) f = 0.9GHz Power gain Gma, Gms = (IC) f = 1.8GHz VCE = parameter VCE = parameter 16 8.5 10V dB dB 5V 10V 8V 5V 12 7 3V 6 2V 3V 2V 10 G G 30 8 1V 6 0.7V 5 4 1V 3 4 2 0.7V 2 0 0 1 5 10 15 20 mA 0 0 30 IC 5 10 15 20 mA 30 IC 6 2005-10-13 BFT92 Power Gain Gma, Gms = (f) Power Gain |S21| = (f) VCE = parameter, I C = 15 mA VCE = parameter, I C = 15 mA 30 26 dB dB 22 20 18 G S21 20 16 14 15 12 10 8 10 6 10V 5 4 2V 0.7V 1V 0.7 0 0 0.5 1 1.5 2 2.5 GHz 10V 2 2V 0 -2 0 3.5 f 0.5 1 1.5 2 2.5 GHz 3.5 f Power Gain Gma, Gms = (VCE): | S21| = (VCE): - - - f = parameter, IC = 15 mA 16 dB 0.9GHz 0.9GHz G 12 10 1.8GHz 8 1.8GHz 6 4 2 0 0 IC 2=15mA4 6 8 V 12 VCE 7 2005-10-13 Package SOT23 BFT92 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 0.1 1 2.4 0.15 3 0.1 MAX. 10 MAX. B 1 0.1 10 MAX. 2.9 0.1 0.15 MIN. Package Outline A 5 0...8 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 1.2 0.9 1.3 0.9 0.8 Marking Layout 12 s Date code (Year/Month) Pin 1 EH s Type code 37 Manufacturer 2003, July BCW66 Example Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 8 2005-10-13 BFT92 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen (c) Infineon Technologies AG 2005. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.Infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9 2005-10-13