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Complementary Power Transistor
Description:
Designed for use in general purpose power amplier and switching applications.
Maximum Ratings
Characteristic Symbol Rating Unit
Collector-Emitter Voltage VCEO 100
V
Collector-Base Voltage VCBO 115
Emitter-Base Voltage VEBO 5
Collector Current -Continuous
-Peak IC
25
40 A
Base Current IB5
Total Power Dissipation at TC = 25°C
Derate above 25°C PD
125
1
W
W/°C
Operating and Storage Junction Temperature Range TJ, TSTG -65 to +150 °C
Thermal Characteristics
Characteristic Symbol Max. Unit
Thermal Resistance Junction to Case Rθjc 1 °C/W
Features:
• Collector-Emitter sustaining Voltage.
VCEO(sus) = 100V (Min.)
• DC Current Gain hFE = 25 (Min.) at IC = 1.5A
• Current Gain Bandwidth Product fT = 3MHz (Min.) at IC = 1A
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Complementary Power Transistor
Electrical Characteristics:
(TC = 25°C unless otherwise noted)
Characteristic Symbol Min. Max. Unit
OFF Characteristics
Collector-Emitter Breakdown Voltage (1)
IC = 30mA, IB = 0 V(BR)CEO 100 - V
Collector Cut off Current
VCE = 60V, IB = 0 ICEO -1
mA
Collector Cut off Current
VCE = 100V, VEB = 0 ICES - 0.7
Emitter Cut off Current
VEB = 5V, IC = 0 IEBO -1
ON Characteristics (1)
DC Current Gain
VCE = 4V, IC = 1.5A
VCE = 4V, IC = 15A
VCE = 4V, IC = 25A
hFE
25
10
5
- -
Collector-Emitter Saturation Voltage
IC = 15A, IB = 1.5A
IC = 25A, IB = 5A
VCE(sat) -1.8
4
V
Base-Emitter On Voltage
IC = 15A, VCE = 4V
IC = 25A, VCE = 4V
VBE(on) -2
4
Dynamic Characteristics
Current Gain Bandwidth Product (2)
IC = 1A, VCE = 10V, f = 1MHz fT3- MHz
(1) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤2%
(2) fT = |hfe| • ftest
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Complementary Power Transistor
Figure - 2 DC Current Gain Figure - 3 Turn-Off Time
Figure - 5 Reverse Base Safe Operating AreaFigure - 4 Turn-On time
Figure - 6 Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown safe operating area curves indicate IC-VCE limits
of the transistor that must be observed for reliable operation
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate.
The data of SOA curve is based on TJ(PK) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(PK) ≤150°C.
At high case temperatures, thermal limitation will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
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Complementary Power Transistor
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence.
Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Part Number Table
Description Part Number
Transistor, NPN, TO-247 BD249C
Transistor, PNP, TO-247 BD250C
Pin Conguration:
1. Base
2. Collector
3. Emitter
Dimensions Min. Max.
A20.63 22.38
B 15.38 16.2
C1.9 2.7
D5.1 6.1
E 14.81 15.22
F11.72 12.84
G 4.2 4.5
H 1.82 2.46
I2.92 3.23
J 0.89 1.53
K 5.26 5.66
L 18.5 21.5
M 4.68 5.36
N 2.4 2.8
O 3.25 3.65
P 0.55 0.7
Dimensions : Millimetres
