IRAM256-1067A
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 4, 2015
Series
10A, 600V
Integrated Power Module for
Appliance Motor Drive Applications
Description
International Rectifier's IRAM256-1067A is a 10A, 600V Integrated Power Hybrid IC with Open Emitter pins for
advanced Appliance Motor Drives applications such as energy efficient Air Conditioner and Washing Machine.
IR's technology offers an extremely compact, high performance AC motor-driver in a single isolated package to
simplify design.
This advanced HIC is a combination of IR's low VCE (on) Trench IGBT technology and the industry benchmark 3
phase high voltage, high speed driver (3.3V compatible) in a fully isolated thermally enhanced package. A built-in
high precision temperature monitor and over-current protection feature, along with the short-circuit rated IGBTs
and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. Using a
Single in line package with full transfer mold structure and CTI>600 minimizes PCB space and resolves isolation
problems to heatsink.
Features
• Integrated gate drivers and bootstrap diodes
• Temperature monitor
• Protection shutdown pin
• Low VCE (on) Trench IGBT technology
• Undervoltage lockout for all channels
• Matched propagation delay for all channels
• 3.3V Schmitt-triggered input logic
• Cross-conduction prevention logic
• Motor Power range 0.25~0.75kW / 85~253 Vac
• Isolation 2000VRMS min and CTI> 600
• High operating case temperature, TCMAX=125°C
Base Part Number Package Type Standard Pack Orderable Part Number
Form Quantity
IRAM256-1067A SIP1A, option 1 LF 10 tubes 80 IRAM256-1067A
IRAM256-1067A2 SIP1A, option 2 LF 10 tubes 80 IRAM256-1067A2
IRAM256-1067A
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Internal Electrical Schematic – IRAM256-1067A
V+ (13)
VRU (17)
VRV (19)
VRW (21)
U, VS1 (10)
V, VS2 (6)
W, VS3 (2)
23 VS1
24 HO1
25 VB1
1 VCC
2 HIN1
3 HIN2
4 HIN3 LIN1
5
LIN2
6
LIN3
7
F
8
ITRIP
9
EN
10
RCIN
11
VSS
12
COM 13
LO1 16
LO3 14
LO2 15
22
VB2
21
HO2
20
VS2
19
VB3
18
HO3
17
VS3
Driver IC
VB1 (9)
VB2 (5)
VB3 (1)
HIN1 (20)
HIN2 (22)
HIN3 (23)
LIN1 (24)
LIN2 (25)
LIN3 (26)
ITRIP (16)
FLT/EN (18)
VTH (27)
VCC (28)
VSS (29)
Q1
Q4
Q2 Q3
Q5 Q6
D1
D4
D2 D3
D5 D6
R1
R4
R2 R3
R5 R6
R9
R8
R7
D9 D8 D7
C1
C2
C3
C4
C5
C6
C7
IRAM256-1067A
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Absolute Maximum Ratings
Symbol Description Min Max Unit
VCES / VRRM IGBT/ FW Diode Blocking Voltage --- 600 V
V+ Positive Bus Input Voltage --- 450
IO @ TC=25°C RMS Phase Current (Note 1) --- 10
A
IO @ TC=100°C RMS Phase Current (Note 1) --- 5
IPK Maximum Peak Phase Current (Note 2) --- 15
FP Maximum PWM Carrier Frequency --- 20 kHz
PD Maximum Power dissipation per IGBT @ TC =25°C --- 28 W
VISO Isolation Voltage (1min) --- 2000 VRMS
TJ (IGBT/Diode/IC) Operating Junction Temperature -40 150
°C
TC Operating Case Temperature Range -40 125
TSTG Storage Temperature Range -40 125
T Mounting torque Range (M3 screw) 0.8 1.0 Nm
IBDF Bootstrap Diode Peak Forward Current --- 1.0 A
PBR_Peak Bootstrap Resistor Peak Power (Single Pulse) --- 15 W
VS1,2,3 High side floating supply offset voltage VB1,2,3 - 20 VB1,2,3 +0.3 V
VB1,2,3 High side floating supply voltage -0.3 600 V
VCC Low Side and logic fixed supply voltage -0.3 20 V
VIN
Input voltage LIN, HIN, I
TRIP
, FLT/EN
-0.3 7 V
Note 1: See Figure 4 and IR IPM Design Tool.
Note 2: tP<100ms.
Inverter Section Electrical Characteristics
VBIAS(VCC, VBS1,2,3)=15V, TJ=25°C unless otherwise specified.
Symbol
Description
Min
Typ
Max
Unit
Conditions
V(BE)CES
Collector-to-Emitter Breakdown
Voltage
600 --- --- V VIN=0V, IC=100μA
ΔV(BR)CES / ΔT
Temperature Coeff. Of
Breakdown Voltage
--- 0.3 --- V/°C
V
IN
=0V, I
C
=250A
(25°C - 150°C)
VCE(ON) Collector-to-Emitter Saturation
Voltage
--- 1.5 1.75 V IC=4A
--- 1.7 --- IC=4A, TJ=150°C
ICES Zero Gate Voltage Collector
Current
--- 5 80 μA VIN=0V, V
+
=600V
--- 80 --- VIN=0V, V
+
=600V, TJ=150°C
VFM Diode Forward Voltage Drop --- 1.6 2.35 V IF=4A
--- 1.3 --- IF=4A, TJ=150°C
VBDFM Bootstrap Diode Forward
Voltage Drop
--- 1.65 1.8 V IF=1A
--- 1.3 --- IF=1A, TJ=150°C
RBR Bootstrap Resistor Value --- 22 --- Ω
ΔRBR/RBR Bootstrap Resistor Tolerance --- --- ±5 %
C1,2,3,4 VCC / VBS Capacitor Value --- 47 --- nF
C6 ITRIP Capacitor Value --- 1 --- nF
C7 NTC Capacitor Value --- 2.2 --- nF
IRAM256-1067A
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Inverter Section Switching Characteristics
VBIAS(VCC, VBS1,2,3)=15V, TJ=25°C unless otherwise specified.
Symbol Description Min Typ Max Unit Conditions
EON Turn-On Switching Loss --- 170 ---
µJ
IC=4A, V+=400V
VCC=15V, L=1.2mH
Energy losses include "tail" and
diode reverse recovery
See CT1
EOFF Turn-Off Switching Loss --- 60 ---
ETOT Total Switching Loss --- 230 ---
EREC
Diode Reverse Recovery
energy
--- 15 ---
TRR Diode Reverse Recovery time --- 115 --- ns
EON Turn-On Switching Loss --- 260 ---
µJ
IC=4A, V+=400V
VCC=15V, L=1.2mH, TJ=150°C
Energy losses include "tail" and
diode reverse recovery
See CT1
EOFF Turn-Off Switching Loss --- 100 ---
ETOT Total Switching Loss --- 360 ---
EREC
Diode Reverse Recovery
energy
--- 40 ---
TRR Diode Reverse Recovery time --- 150 --- ns
QG Turn-On IGBT Gate Charge --- 13 --- nC IC=6A, V
+
=400V, VGE=15V
RBSOA Reverse Bias Safe Operating
Area FULL SQUARE
TJ=150°C, IC=20A, VP=600V
V+= 450V,
VCC=+15V to 0V See CT3
SCSOA
Short Circuit Safe Operating
Area
5 --- --- µs
T
J
=25°C, V+= 400V, V
GE
=+15V
to 0V
SCSOA
Short Circuit Safe Operating
Area
3 --- --- µs
T
J
=100°C, V+= 400V,
VGE=+15V to 0V
Recommended Operating Conditions Driver Function
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at 15V
differential (Note 3)
Symbol Description Min TYP Max Unit
VB1,2,3 High side floating supply voltage VS+12.5 VS+15 VS+17.5 V
VS1,2,3 High side floating supply offset voltage Note 4 --- 450 V
VCC Low side and logic fixed supply voltage 13.5 15 16.5 V
VIN Input voltage LIN, HIN, ITRIP, FLT/EN VSS --- VSS+5 V
HIN High side PWM pulse width 1 --- --- µs
Deadtime External dead time between HIN and LIN 1 --- --- µs
Note 3: For more details, see IR21364 data sheet
Note 4: Logic operational for VS from COM-5V to COM+600V. Logic state held for VS from COM-5V to COM-VBS.
(please refer to DT97-3 for more details)
IRAM256-1067A
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Static Electrical Characteristics Driver Function
VBIAS (VCC, VBS1,2,3)=15V, TJ=25ºC, unless otherwise specified. The VIN and IIN parameters are referenced to COM and are
applicable to all six channels. (Note 3)
Symbol
Description
Min
TYP
Max
Unit
VIN,TH+ Positive going input threshold for LIN, HIN, FLT/EN 2.5 --- --- V
VIN,TH- Negative going input threshold for LIN, HIN, FLT/EN --- --- 0.8 V
VCCUV+, VBSUV+ VCC/VBS supply undervoltage, Positive going threshold 10.6 11.1 11.6 V
VCCUV-, VBSUV- VCC/VBS supply undervoltage, Negative going threshold 10.4 10.9 11.4 V
VCCUVH, VBSUVH VCC and VBS supply undervoltage lock-out hysteresis --- 0.2 --- V
IQBS Quiescent VBS supply current --- --- 150 µA
IQCC Quiescent VCC supply current --- --- 3.2 mA
ILK Offset Supply Leakage Current --- --- 50 µA
IIN+ Input bias current VIN=3.3V for LIN, HIN, FLT/EN --- 100 195 µA
IIN- Input bias current VIN=0V for LIN, HIN, FLT/EN -1 --- --- µA
ITRIP+ ITRIP bias current VITRIP=3.3V --- 3.3 6 µA
ITRIP- ITRIP bias current VITRIP=0V -1 --- --- µA
VITRIP ITRIP threshold Voltage 0.44 0.49 0.54 V
VITRIP_HYS ITRIP Input Hysteresis --- 0.07 --- V
RFLT Fault low on resistance --- 50 100 Ω
Dynamic Electrical Characteristics
VBIAS (VCC, VBS1,2,3)=15V, TJ=25ºC, unless otherwise specified. Dynamic parameters are guaranteed by design. (Note 3)
Symbol Description Min Typ Max Unit Conditions
TON
Input to Output propagation
turn-on delay time (see Fig.12)
--- --- 1.15 µs
IC=4A, V+=300V
TOFF
Input to Output propagation
turn-off delay time (see Fig.12)
--- --- 1.15 µs
TFILIN Input filter time (HIN,LIN) --- 310 --- ns VIN=0 or VIN=5V
TFILEN Input filter time (FLT/EN) 100 200 --- ns VEN=0 or VEN=5V
TEN
EN low to six switch turn-off
propagation delay (see fig. 3)
--- --- 1.35 µs VIN=0 or VIN=5V, VEN=0
TFLT ITRIP to Fault propagation delay 400 600 800 ns VIN=0 or VIN=5V, VITRIP=5V
TBLT-TRIP ITRIP Blanking Time 100 150 --- ns VIN=0 or VIN=5V, VITRIP=5V
TITRIP
I
TRIP
to six switch turn-off
propagation delay (see fig. 2)
--- --- 1.5 µs IC=4A, V+=300V
DT
Internal Dead Time injected by
driver
220 290 360 ns VIN=0 or VIN=5V
MT
Matching Propagation Delay
Time (On & Off) all channels
--- 40 75 ns External dead time> 400ns
TFLT-CLR Post ITRIP to six switch turn-off
clear time (see fig. 2)
1.1 1.7 2.3 ms TC = 25°C
1 1.5 1.9 TC = 100°C
IRAM256-1067A
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Thermal and Mechanical Characteristics
Symbol Description Min Typ Max Unit Conditions
RTH(J-C) Thermal resistance, per IGBT --- 3.5 4.4
°C/W
Inverter Operating Condition
Flat, greased surface. Heatsink
compound thermal conductivity
1W/mK
RTH(J-C) Thermal resistance, per Diode --- 5.0 6.3
RTH(C-S) Thermal resistance, C-S --- 0.1 ---
CTI Comparative Tracking Index 600 --- --- V
BKCurve Curvature of module backside 0 --- --- µm Convex only
Note 5: Flatness of the heatsink should be between -50µm to 100µm.
Internal NTC - Thermistor Characteristics
Symbol Description Min Typ Max Unit Conditions
R25 Resistance 44.65 47 49.35 kΩ TC = 25°C
R125 Resistance 1.27 1.41 1.56 kΩ TC = 125°C
B B-constant (25-50°C) 3989 4050 4111 k R2 = R1e
[B(1/T2 - 1/T1)]
Temperature Range -40 --- 125 °C
Typ. Dissipation constant --- 1 --- mW/°C TC = 25°C
Input-Output Logic Level Table
FLT/EN ITRIP HIN1,2,3 LIN1,2,3 U,V,W
1 0 1 0 V+
1 0 0 1 0
1 0 0 0 Off
1 0 1 1 Off
1 1 X X Off
0 X X X Off
Qualification Information†
Qualification Level
Industrial††
(per JEDEC JESD 47E)
ESD
Machine Model
Class C
(per JEDEC standard JESD22-A115-A)
Human Body Model
Class 1C
(per JEDEC standard JESD22-A114-D)
RoHS Compliant Yes
† Qualification standards can be found at International Rectifier’s web site http://www.irf.com/
†† Higher qualification ratings may be available should the user have such requirements. Please contact your International
Rectifier sales representative for further information.
Ho
Lo
U,V,W
IC
Driver
V
+
HIN1,2,3
LIN1,2,3
(20,22,23)
(24,25,26)
(10,6,2)
IRAM256-1067A
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Figure 1. Input/Output Timing Diagram
Figure 2. ITRIP Timing Waveform
Figure 3. Output Enable Timing Diagram
Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge
output voltage would be determined by the direction of current flow in the load.
U,V,W
LIN1,2,3
ITRIP
HIN1,2,3
I
TRIP
LIN1,2,3
HIN1,2,3
T
FLT-CLR
50%
50%
U,V,W
50%
T
ITRIP
50%
FLT
50%
T
FLT
EN
50%
50%
U,V,W
TEN
IRAM256-1067A
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Module Pin-Out Description
Pin Name Description
1 VB3 High Side Floating Supply Voltage 3
2 W,VS3 Output 3 - High Side Floating Supply Offset Voltage
3 N/A None
4
5 VB2 High Side Floating Supply Voltage 2
6 V,VS2 Output 2 - High Side Floating Supply Offset Voltage
7 N/A None
8
9 VB1 High Side Floating Supply Voltage 1
10 U,VS1 Output 1 - High Side Floating Supply Offset Voltage
11 N/A None
12
13 V+ Positive Bus Input Voltage
14 N/A None
15
16 ITRIP Current Protection Pin
17 VRU Low Side Emitter Connection - Phase 1
18 FLT/EN Fault Output and Enable Pin
19 VRV Low Side Emitter Connection - Phase 2
20 HIN1 Logic Input High Side Gate Driver - Phase 1
21 VRW Low Side Emitter Connection - Phase 3
22 HIN2 Logic Input High Side Gate Driver - Phase 2
23 HIN3 Logic Input High Side Gate Driver - Phase 3
24 LIN1 Logic Input Low Side Gate Driver - Phase 1
25 LIN2 Logic Input Low Side Gate Driver - Phase 2
26 LIN3 Logic Input Low Side Gate Driver - Phase 3
27 VTH Temperature Feedback
28 VCC +15V Main Supply
29 VSS Negative Main Supply
IRAM256-1067A
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Typical Application Connection IRAM256-1067A
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce
ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will
further improve performance.
2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown
connected between these terminals should be located very close to the module pins. Additional high frequency
capacitors, typically 0.1µF, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made
based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value must be
selected to limit the power dissipation of the internal resistor in series with the VCC. (see maximum ratings Table
on page 3).
4. After approx. 2ms the FAULT is reset. (see Dynamic Characteristics Table on page 5).
5. PWM generator must be disabled within Fault duration to guarantee shutdown of the system, overcurrent
condition must be cleared before resuming operation.
29
1
3-Phase AC
MOTOR
BOOT-STRAP
CAPACITORS
W
V
U
VDD (28)
ITRIP (16)
VSS (29)
100nF
CONTROLLER
V+
DC BUS
CAPACITORS
PHASE LEG
CURRENT
SENSE
VTH (27)
Enable
10m
CURRENT SENSING CAN USE A
SINGLE SENSE RESISTOR OR PHASE
LEG SENSING AS SHOWN
0.1m
15 V
FLT/EN (18)
IRAM256-1067A
V+ (13)
VRU (17)
VRV (19)
VRW (21)
HIN2 (22)
HIN1 (20)
HIN3 (23)
LIN1 (24)
LIN2 (25)
LIN3 (26)
VB3 (1)
VB2 (5)
VB1 (9)
W, VS3 (2)
V, VS2 (6)
U, VS1 (10)
5 V
IRAM256-1067A
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Figure 4. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency
Sinusoidal Modulation, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
Figure 5. Maximum Sinusoidal Phase Current vs. Modulation Frequency
Sinusoidal Modulation, TJ=150°C, TC=100°C, MI=0.8, PF=0.6
0
2
4
6
8
10
0246810 12 14 16 18 20
Maximum Output Phase RMS Current - A
PWM Sw itchin g Fr e quency -k Hz
T
C
= 90ºC
T
C
= 100ºC
T
C
= 125ºC
T
C
= 90ºC
T
C
= 100ºC
T
C
= 125ºC
V+=320V
V+=400V
0
1
2
3
4
5
6
7
8
110 100
Maximum Output Phase RMS Current - A
Modulation Frequency -Hz
V+=320V
V+=400V
F
PWM
= 6kHz
F
PWM
= 10kHz
F
PWM
= 16kHz
IRAM256-1067A
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Figure 6. Total Power Losses vs. PWM Switching Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
Figure 7. Total Power Losses vs. Output Phase Current
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
0
20
40
60
80
100
0246810 12 14 16 18 20
Total Power Loss- W
PWM Sw itchin g Fr e quency -k Hz
I
OUT
= 6A
I
OUT
= 5A
I
OUT
= 4A
0
20
40
60
80
100
0 1 2 3 4 5 6 7
Total Power Loss - W
Output Phase Current - A
RMS
F
PWM
= 20kHz
F
PWM
= 16kHz
F
PWM
= 6kHz
IRAM256-1067A
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Figure 8. Maximum Allowable Case Temperature vs. Output RMS Current per Phase
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
Figure 9. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature
Sinusoidal Modulation, V+=400V, Iphase=5Arms, fsw=6kHz, fmod=50Hz, MI=0.8, PF=0.6
40
60
80
100
120
140
160
0 1 2 3 4 5 6 7
Max Allowable Case Temperature -ºC
Output Phase Current - A
RMS
F
PWM
= 20kHz
F
PWM
= 16kHz
F
PWM
= 6kHz
123
90
100
110
120
130
140
150
160
65 70 75 80 85 90 95 100 105 110 115 120 125 130
IGBT Junction Temperature - °C
Internal Thermistor Temperature Equivalent Read Out - °C
T
J a vg
= 1.11 x T
Therm
+ 13
IRAM256-1067A
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Figure 10. Thermistor Readout vs. Temperature (7.5kohm REXT pull-down resistor) and Normal Thermistor
Resistance values vs. Temperature Table.
Figure 11. Recommended Bootstrap Capacitor Value vs. Switching Frequency
IRAM256-1067A
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Figure 12. Switching Parameter Definitions
Figure 12a. Input to Output propagation turn-
on delay time.
Figure 12b. Input to Output propagation turn-
off delay time.
Figure 12c. Diode Reverse Recovery.
50%
H
IN
/L
IN
V
CE
I
C
H
IN
/L
IN
TOFF
t
f
90 % I
C
10 % IC
50%
V
CE
V
CE
I
C
H
IN
/L
IN
TON
tr
50%
H
IN
/L
IN
90 % IC
10 %
IC
50%
V
CE
V
CE
I
F
H
IN
/L
IN
t
rr
I
rr
IRAM256-1067A
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Figure CT1. Switching Loss Circuit
Figure CT2. S.C.SOA Circuit
Figure CT3. R.B.SOA Circuit
Ho
Lo
U,V,W
IC
Driver
Lin1,2,3
Hin1,2,3
V+
IN
IO
Ho
Lo
U,V,W
IC
Driver
Lin1,2,3
Hin1,2,3
I
o
V
+
IN
IO
Ho
Lo
U,V,W
IC
Driver
Hin1,2,3
Io
Lin1,2,3
V+
IN
IO
IRAM256-1067A
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Package Outline IRAM256-1067A2
Missing pins: 3,4,7,8,11,12,14,15
Dimensions in mm
For mounting instruction see AN-1049
Data and Specifications are subject to change without notice
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
