DS30054 Rev. 6 - 2 1 of 3 MMBTA55 / MMBTA56
www.diodes.com ã Diodes Incorporated
MMBTA55 / MMBTA56
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
·Epitaxial Planar Die Construction
·Complementary NPN Types Available
(MMBTA05 / MMBTA06)
·Ideal for Medium Power Amplification and
Switching
·Also Available in Lead Free Version
Characteristic Symbol MMBTA55 MMBTA56 Unit
Collector-Base Voltage VCBO -60 -80 V
Collector-Emitter Voltage VCEO -60 -80 V
Emitter-Base Voltage VEBO -4.0 V
Collector Current - Continuous (Note 1) IC-500 mA
Power Dissipation (Note 1) Pd300 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 417 °C/W
Operating and Storage and Temperature Range Tj,T
STG -55 to +150 °C
Maximum Ratings @ TA= 25°C unless otherwise specified
A
E
JL
TOP VIEW
M
BC
C
BE
H
G
D
K
Mechanical Data
·Case: SOT-23, Molded Plastic
·Case material - UL Flammability Rating
Classification 94V-0
·Moisture sensitivity: Level 1 per J-STD-020A
·Terminals: Solderable per MIL-STD-202,
Method 208
·Also Available in Lead Free Plating (Matte Tin
Finish). Please see Ordering Information,
Note 4, on Page 2
·Terminal Connections: See Diagram
·MMBTA55 Marking (See Page 2): K2H
·MMBTA56 Marking (See Page 2): K2G
·Ordering & Date Code Information: See Page 2
·Weight: 0.008 grams (approx.)
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage MMBTA55
MMBTA56 V(BR)CBO -60
-80 ¾VIC= -100mA, IE = 0
Collector-Emitter Breakdown Voltage MMBTA55
MMBTA56 V(BR)CEO -60
-80 ¾VIC= -1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO -4.0 ¾VIE = -100mA, IC = 0
Collector Cutoff Current MMBTA55
MMBTA56 ICBO ¾-100 nA VCB = -60V, IE= 0
VCB = -80V, IE= 0
Collector Cutoff Current MMBTA55
MMBTA56 ICEX ¾-100 nA VCE = -60V, IBO = 0V
VCE = -80V, IBO = 0V
ON CHARACTERISTICS (Note 2)
DC Current Gain hFE 100 ¾¾
IC = -10mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
Collector-Emitter Saturation Voltage VCE(SAT) ¾-0.25 V IC= -100mA, IB = -10mA
Base- Emitter Saturation Voltage VBE(SAT) ¾-1.2 V IC = -100mA, VCE = -1.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product fT50 ¾MHz VCE = -1.0V, IC = -100mA,
f = 100MHz
SOT-23
Dim Min Max
A0.37 0.51
B1.20 1.40
C2.30 2.50
D0.89 1.03
E0.45 0.60
G1.78 2.05
H2.80 3.00
J0.013 0.10
K0.903 1.10
L0.45 0.61
M0.085 0.180
a0°8°
All Dimensions in mm
E
B
C
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
Features
SPICE MODELS: MMBTA55 MMBTA56
DS30054 Rev. 6 - 2 2 of 3 MMBTA55 / MMBTA56
www.diodes.com
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Date Code Key
K2x = Product Type Marking Code, ex: K2H = MMBTA55
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K2x
YM
Marking Information
Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
4. For Lead Free version (with Lead Free terminal finish) part number, please add "-F" suffix to part number above.
Example: MMBTA56-7-F.
Device Packaging Shipping
MMBTA55-7
MMBTA56-7 SOT-23 3000/Tape & Reel
Ordering Information (Note 3)
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009
Code JKLMNPR
ST U VW
0
50
100
25 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1, Max Power Dissipation vs
Ambient Tem
p
erature
150
200
250
300
350
0
0
0.05
0.10
0.15
0.20
0
.
2
5
110
100 1000
V , COLLECTOR TO EMITTER
CE(SAT)
SATURATION VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
IC
IB=10
T=-50°C
A
T=25°C
A
T = 150°C
A
DS30054 Rev. 6 - 2 3 of 3 MMBTA55 / MMBTA56
www.diodes.com
1
0.1
0.1
10 100
V , BASE EMITTER VOLTAGE (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
C
Fi
g
. 4 Base Emitter Volta
g
e vs. Collector Current
0.2
0.3
0.4
0.6
0.5
0.8
0.7
0.9
1
.
0
V= 5V
CE
T= 25°C
A
T = -50°C
A
T = 150°C
A
10
1000
100
110 1000
100
h , DC CURRENT
FE
GAIN (NORMALIZED)
I , COLLECTOR CURRENT (mA)
C
Fig. 3, DC Current Gain vs
Collector Current
T = -50°C
A
T=25°C
A
T = 150°C
A
V=5V
CE
1
10
100
1 10 100
I , COLLECTOR CURRENT (mA)
C
Fi
g
. 5 Gain Bandwidth Product vs. Collector Current
f , GAIN BANDWIDTH PRODUCT (MHz)
T
V= 5V
CE
