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© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 250 V
VDGR TJ= 25°C to 150°C; RGS = 1 MW250 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C60A
IDM TC= 25°C, pulse width limited by TJM 240 A
IAR TC= 25°C60A
EAR TC= 25°C45mJ
EAS TC= 25°C 1.5 J
dv/dt IS£ IDM, di/dt £ 100 A/ms, VDD £ VDSS, 5 V/ns
TJ£ 150°C, RG = 2 W
PDTC= 25°C 360 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.063 in) from case for 10 s 3 00 °C
MdMounting torque TO-247 1.13/10 Nm/lb.in.
TO-264 0.9/6 Nm/lb.in.
Weight TO-247 6 g
TO-264 1 0 g
TO-268 4 g
HiPerFETTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Low Gate Charge and Capacitances
Features
Low gate charge
International standard packages
Epoxy meet UL 94 V-0, flammability
classification
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Avalanche energy and current rated
Fast intrinsic Rectifier
Advantages
Easy to mount
Space savings
High power density
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 1 mA 2 5 0 V
VGS(th) VDS = VGS, ID = 4 mA 2 4 V
IGSS VGS = ±20 VDC, VDS = 0 ±200 nA
IDSS VDS = VDSS TJ = 25°C50mA
VGS = 0 V TJ = 125°C1mA
RDS(on) VGS = 10 V, ID = 0.5 • ID25 47 mW
Pulse test, t £ 300 ms, duty cycle d £ 2 %
G = Gate
S = Source TAB = Drain
98630 (6/99)
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
(TAB)
GS
TO-264 AA (IXFK)
S
GDD (TAB)
Advanced Technical Information
VDSS = 250 V
ID25 = 60 A
RDS(on) = 47mW
trr £250 ns
IXFH 60N25Q
IXFK 60N25Q
IXFT 60N25Q
IXYS reserves the right to change limits, test conditions, and dimensions.
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© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 2 2 3 5 S
Ciss 5100 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1000 pF
Crss 400 pF
td(on) 27 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 60 ns
td(off) RG = 2.0 W (External), 8 0 ns
tf25 ns
Qg(on) 180 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 39 nC
Qgd 90 nC
RthJC 0.35 K/W
RthCK TO-247 0.25 K/W
TO-264 0.15 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 60 A
ISM Repetitive; pulse width limited by TJM 240 A
VSD IF = IS, VGS = 0 V, 1 .5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr 250 ns
QRM 1mC
IRM 8 A
IF = IS -di/dt = 100 A/ms, VR = 100 V
IXFH 60N25Q IXFK 60N25Q
IXFT 60N25Q
TO-247 AD (IXFH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A12.7 2.9 .106 .114
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b21.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E113.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
TO-268AA (IXFT) (D3 PAK)
Min. Recommended Footprint
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
TO-264 AA (IXFK) Outline
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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