2N720A
EPITAXIAL PLANAR NPN
■HIGH VOLTAGE GENERAL PURPOSE
DESCRIPTION
The 2N790A is a silicon Planar Epitaxial NPN
transistor in Jedec TO-18 metal case. It is
suitable for a wide variety of amplifier and
switching applications .
®
INTERNAL SCHEMATIC DIAG RAM
December 2002
A BSO LUT E MAX IMU M RAT IN GS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) 120 V
VCEO Collector-Emitter Voltage (IB = 0) 80 V
VEBO Emitter-Base Voltage (IC = 0) 7 V
ICCollector Current 500 mA
Ptot Total Dissipation at Tamb ≤ 25 oC
at TC ≤ 25 oC0.5
1.8 W
W
Tstg Storage Temperature -55 to 175 oC
TjMax. Operating Junction Temperature 175 oC
TO-18
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THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max 83.3
300
oC/W
oC/W
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specif ied)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE = 0) VCB = 90 V 10 nA
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
IC = 100 µA120 V
V(BR)CEO∗Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 30 mA 80 V
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 100 µA7V
I
EBO Emitter Cut-off
Current (IE = 0) VEB = 5 V 10 nA
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 50 mA IB = 5 mA
IC = 150 mA IB = 15 mA 1.2
5V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 50 mA IB = 5 mA
IC = 150 mA IB = 15 mA 0.9
1.3 V
V
hFE∗DC Current Gain IC = 100 µA VCE = 10 V
IC = 10 mA VCE = 10 V
IC = 150 mA VCE = 10 V
20
35
40 120
hfe∗Small Signal Current
Gain IC = 50 mA VCE = 10 V
f = 20 MHz 2.5
CCBO Collector-Base
Capacitance IE = 0 VCB = 10 V f = 1 MHz 15 pF
CEBO Emitter-Base
Capacitance IC = 0 VEB = 0.5 V f = 1 MHz 85 pF
∗ P ulsed: P ulse durat ion = 300 µs, d uty cycle ≤ 1 %
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 5.3 0.208
E4.9 0.193
F 5.8 0.228
G 2.54 0.100
H1.2 0.047
I 1.16 0.045
L45
o
45
o
L
G
I
D A
F
E
B
H
C
TO-18 MECHANICAL DATA
0016043
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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specif ication mentioned in this publication are
subject t o cha nge without notice. This publication supersedes and replaces a ll information previously supplie d. STMicroe lectronics pr oducts
ar e not aut horized for use as critical compo nents in life support devices or systems without expr ess written approval of STMicroel ectronics.
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