MJE13003D - DC Components Co., Ltd.

MJE13003D

DISCRETE SEMICONDUCTORS

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Pinning

1 = Base

2 = Collector

3 = Emitter

Description

Designed for high-voltage, high-speed power switching 

inductive circuits where fall time is critical.

Characteristic Symbol Rating Unit

Collector-Emitter Voltage VCEV 700 V

VCEO 400 V

Emitter-Base Voltage VEBO 9 V

Collector Current  IC 1.5 A

Base Current IB 0.75 A

Total Power Dissipation(TC=25oC) PD 40 W

Junction Temperature TJ +150 oC

Storage Temperature TSTG -55 to +150 oC

Absolute Maximum Ratings(TA=25oC)

Characteristic Symbol Min Typ Max Unit Test Conditions

Collector-Emitter Breakdown Voltage BVCEV 700 - - V IC=1mA, VBE(off)=1.5V

BVCEO 400 - - V IC=10mA

Collector Cutoff Current ICEV - - 1 mA VCE=700V, VBE(off)=1.5V

Emitter Cutoff Current IEBO - - 1 mA VEB=9V

VCE(sat)1 - - 0.5 V IC=0.5A, IB=0.1A

Collector-Emitter Saturation Voltage(1) VCE(sat)2 - - 1 V IC=1A, IB=0.25A

VCE(sat)3 - - 3 V IC=1.5A, IB=0.5A

Base-Emitter Saturation Voltage(1) VBE(sat)1 - - 1 V IC=0.5A, IB=0.1A

VBE(sat)2 - - 1.2 V IC=1A, IB=0.25A

DC Current Gain(1) hFE1 8 - 40 - IC=0.5A, VCE=2V

hFE2 5 - 25 - IC=1A, VCE=2V

Electrical Characteristics

(Ratings at 25oC ambient temperature unless otherwise specified)

(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%

TO-126ML

Dimensions in inches and (millimeters)

.090

(2.28)

.123(3.12)

.113(2.87)

.084(2.14)

.074(1.88)

.033(0.84)

.027(0.68)

.163(4.12)

.153(3.87) .044(1.12)

.034(0.87)

.060(1.52)

.050(1.27)

.084(2.12)

.074(1.87)

.591(15.0)

.551(14.0)

.300(7.62)

.290(7.37)

.148(3.75)

.138(3.50)

.056(1.42)

.046(1.17)

.180

(4.56)Typ

.146(3.70)

.136(3.44)

.027(0.69)

.017(0.43)

Typ

123