ESAD25(C,N,D) (15A) (200V to 400V / 15A)
FAST RECOVERY DIODE Outline drawings, mm
Features
High voltage by mesa design
High reliability
Applications
High speed switching
Maximum ratings and character istics
Absolute maximum ratings
Item
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Average output current
Surge current
Operating junction temperature
Storage temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
120
-40 to +150
-40 to +150
Unit
V
V
A
A
°C
°C
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Forward voltage drop
Reverse current
Reverse recover y time
Thermal resistance
Symbol
VFM
IRRM
t rr
Rth(j-c)
Conditions
IFM=8.0A
VR=VRRM
IF=0.1A, IR=0.1A
Junction to case
Max.
1.3
0.1
0.4
2.0*
Unit
V
mA
µs
°C/W
Square wave, duty=1/2, Tc=100°C
Sine wave 10ms
Rating
-02 -04
200 400
250 450
15*
Connection diagram
*Average forward current of centertap full wave connection
ESAD25- C
ESAD25- N
ESAD25- D
1
1
1
2
2
2
3
3
3
JEDEC
EIAJ SC-65
15.5 Max.
Ø3.2±0.1
5.455.45
1.1
1.6
3.0±0.2
5.0±0.1
13.0
10.0
19.5±0.2
4.5±0.2
2.0
1.6
2.2
15±0.2
1.5
14.5±0.2
0.5 1.5
7.2±0.1
12
3
ESAD25(C,N,D)(15A)
(200V to 400V / 15A )
Characteristics
Forward characteristics
VF [V]
Reverse characteristics
VR [V]
IF
[A] IR
[µA]
Surge capability
IFSM
[A]
Forward power dissipation
Io [A]
WF
[W]
0 2 4 6 8 10 12 14
30
10
5
3
1
0.5
0.3
0.1 0 0.6 0.8 1.0 1.2 1.4 1.6 1.8
300
100
30
10
3
1
0.3
0.1
Junction capacitance characteristics
Cj
[pF]
VR [V]
Output current-case temperature
14
12
10
8
6
4
2
0
Tc
[°C]
0 4 8 12 16 20
Io [A]
100
50
30
10
5
3
5 10 30 50 100 1 3 5 10 30
0 100 200 300
200
160
120
80
40
0
300
100
50
30
10
[time] (at 50Hz)
Transient thermal impedance
[°C/W]
t [sec.]
ESAD25(C,N,D)(15A)
(200V to 400V / 15A )
10-3 10-2 10-1 100 101 102
101
100
10-1
