MCR08BT1,115 - NXP Semiconductors

1. Product profile

1.1 General description

Passivated, sensitive gate thyristo r in a SOT2 23 pl as tic package.

1.2 Features and benefits

Sensitive gate

Surface mount package.

1.3 Applications

General purpose switching and phase control

Designed to be interfaced directly to microcontrollers, logic integrated circuits and low

power gate trigge r circuits.

1.4 Quick reference data

2. Pinning information

3. Ordering information

SOT223

MCR08BT1

Thyristor; logic level

Rev. 4 — 2 November 2011 Product data sheet

SOT223

VDRM, VRRM  200 V IT(RMS)  0.8 A

IT(AV)  0.5 A ITSM  9 A

IGT = 50 A (typ).

Table 1: Pinning

Pin Description Simplified outline Symbol

1 cathode

SOT223 (SC-73)

2 anode

3 gate

4 anode

132

sym037

Table 2: Ordering information

Type number Package

Name Description Version

MCR08BT1 SC-73 plastic surface mounted package with increased heat sink; 4 leads SOT223

Product data sheet Rev. 4 — 2 November 2011 2 of 13

NXP Semiconductors MCR08BT1

Thyristor; logic level

4. Limiting values

[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.

The rate of rise of current should not exceed 15 A/s.

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDRM, VRRM repetitive peak off-state voltage [1] 200 V

IT(AV) a ver age on-state current half sine wave; Tsp  112 C;

see Figure 1 -0.5 A

IT(RMS) RMS on-state current all conduction angles;

see Figure 4 and 5-0.8 A

ITSM non-repetitive peak on-state

current half sine wave; Tj= 25 C

prior to surge; see Figure 2

and 3

t = 10 ms - 8 A

t = 8.3 ms - 9 A

I2tI

2t for fusing t = 10 ms - 0.32 A2s

dIT/dt repetitive rate of rise of on-state

current after triggering ITM = 2 A; IG = 10 mA;

dIG/dt = 100 mA/s-50 A/s

IGM peak gate current - 1 A

VGM peak gate voltage - 5 V

VRGM peak reverse gate voltage - 5 V

PGM peak gate power - 2 W

PG(AV) average gate power over any 20 ms period - 0.1 W

Tstg storage temperature 40 +150 C

Tjjunction temperature - 125 C

a = form factor = IT(RMS)/IT(AV).

Fig 1. Total power dissipation as a function of average on-state current; maximum values

001aac104

Ptot

(W)

110

125

IT(AV) (A)

0 0.70.4 0.60.20.1 0.50.3

2.2

2.8

conduction

angle

(degrees)

form

factor

120

180

2.8

2.2

1.9

1.57

Tsp(max)

(°C)

0.8

0.6

0.4

0.2

113

116

119

122

a =

1.57

1.9

Product data sheet Rev. 4 — 2 November 2011 3 of 13

NXP Semiconductors MCR08BT1

Thyristor; logic level

f = 50 Hz.

Fig 2. No n-re pe titive peak on-state current as a function of the number of sinusoidal current cycles; maximum

values

tp  10 ms.

Fig 3. Non-re peti tive pea k on -state curren t as a funct ion of pulse wid th for sinusoidal currents; maximum values

001aac105

ITSM

(A)

1 103

102

Tj initial = 25 °C max

ITITSM

001aac106

tp (s)

10−510−2

10−3

10−4

102

103

ITSM

(A)

Tj initial = 25 °C max

ITITSM

Product data sheet Rev. 4 — 2 November 2011 4 of 13

NXP Semiconductors MCR08BT1

Thyristor; logic level

5. Thermal characteristics

f = 50 Hz; Tsp  112 C. Tsp = 112 C.

Fig 4. RMS on-state current as a function of surge

duration for sinusoidal currents; maximum

values

Fig 5. RMS on-state current as a function of solder

point temperature; maximum values

001aac107

1.0

0.5

1.5

2.0

IT(RMS)

(A)

surge duration (s)

10−210−1101

Tsp (°C)

−50 150100050

001aac108

1.2

IT(RMS)

(A)

1.0

0.8

0.6

0.4

0.2

Table 4: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-sp) thermal resistance from junction to

solder point see Figure 6 --15K/W

Rth(j-a) thermal resistance from junction to

ambient printed-circuit board mounted,

minimum footprint -156-K/W

printed-circuit board mounted, pad

area as in Figure 14 -70-K/W

Product data sheet Rev. 4 — 2 November 2011 5 of 13

NXP Semiconductors MCR08BT1

Thyristor; logic level

6. Characteristics

Fig 6. Transient thermal impedance from junction to solder point as a function of pulse duration

001aac114

10−1

102

Zth(j-sp)

(K/W)

10−2

tp (s)

10−511010−1

10−2

10−410−3

δ =

Table 5: Characteristics

Tj = 25



C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

IGT gate trigger current VD = 12 V; IT = 10 mA; gate open circuit;

see Figure 8 -50200A

ILlatching current VD = 12 V; IGT = 0.5 mA; RGK =1k;

see Figure 10 - 26mA

IHholding current VD = 12 V; IGT = 0.5 mA; RGK =1k;

see Figure 11 - 25mA

VTon-stat e vo ltage IT = 1.2 A; see Figure 9 - 1.25 1.7 V

VGT gate trigger voltage IT = 10 mA; gate open circuit; see Figure 7

VD = 12 V - 0.5 0.8 V

VD = VDRM(max); Tj=125 C0.20.3-V

IDoff-state leakage current VD = VDRM(max); Tj=125C; RGK =1k- 0.05 0.1 mA

IRreverse current VR=V

RRM(max); Tj=125C; RGK =1k- 0.05 0.1 mA

Dynamic characteristics

dVD/dt critical rate of rise of

off-state voltage VDM = 67 % VDRM(max); Tj = 125 C; exponential

waveform

RGK =1k500 800 - V/s

gate open circuit - 25 - V/s

tgt gate controlled turn-on

time ITM = 2 A; VD=V

DRM(max); IG=10mA;

dIG/dt = 0.1 A/s-2-s

tqcircuit commutated

turn-off time VD = 67 % VDRM(max); Tj=125C; ITM =1.6A;

VR = 35 V; dITM/dt = 30 A/s; dVD/dt = 2 V/s;

RGK =1k

-100-s

Product data sheet Rev. 4 — 2 November 2011 6 of 13

NXP Semiconductors MCR08BT1

Thyristor; logic level

Fig 7. Normalized gate trigger voltage as a function of

junction temperature Fig 8. Normalized gate trigge r current as a function of

junction temperature

VO = 1.0 V.

RS = 0.27 .

(1) Tj = 125 C; typical values.

(2) Tj = 125 C; maximum values.

(3) Tj = 25 C; maximum values.

RGK = 1 k .

Fig 9. On -state current characteristics Fig 10. Normalized latching curren t as a function of

junction temperature

Tj (°C)

−50 150100050

001aac109

0.8

1.2

1.6

0.4

VGT(Tj)

VGT(25 °C)

Tj (°C)

−50 150100050

001aac110

IGT(Tj)

IGT(25 °C)

001aac113

VT (V)

0.4 2.821.2

(A)

(1) (2) (3)

Tj (°C)

−50 150100050

001aab503

IL(25°C)

Product data sheet Rev. 4 — 2 November 2011 7 of 13

NXP Semiconductors MCR08BT1

Thyristor; logic level

7. Package information

Epoxy meets requirements of UL94 V-0 at 1⁄8 inch.

RGK = 1 k .(1)R

GK = 1 k.

(2) Gate open circuit.

Fig 11. Normalized holding current as a function of

junction temperature Fig 12. Critical rate of rise of off-state voltage as a

function of junction temperature; typical values

Tj (°C)

−50 150100050

001aab504

IH(25°C)

001aac115

103

102

104

dVD/dt

(V/μs)

Tj (°C)

0 15010050

(2)

(1)

Product data sheet Rev. 4 — 2 November 2011 8 of 13

NXP Semiconductors MCR08BT1

Thyristor; logic level

8. Package outline

Fig 13. Package outline SOT223 (SC-73)

UNIT A1bpcDEe1HELpQywv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 0.10

0.01

1.8

1.5 0.80

0.60

3.1

2.9 0.32

0.22 6.7

6.3 3.7

3.3 2.3

4.6 7.3

6.7 1.1

0.7 0.95

0.85 0.1 0.10.2

DIMENSIONS (mm are the original dimensions)

SOT223 SC-73 04-11-10

06-03-16

detail X

vMA

0 2 4 mm

scale

132

Plastic surface-mounted package with increased heatsink; 4 leads SOT223

Product data sheet Rev. 4 — 2 November 2011 9 of 13

NXP Semiconductors MCR08BT1

Thyristor; logic level

9. Mounting

9.1 Mounting instructions

Dimensions in mm.

Fig 14. SOT223: minimum footprint

001aab508

3.8 min

1.5

min

1.5

min

(3×)

2.3

4.6

6.3

1.5

min

Product data sheet Rev. 4 — 2 November 2011 10 of 13

NXP Semiconductors MCR08BT1

Thyristor; logic level

10. Revision history

Table 6. Revision history

Document ID Release date Data sheet status Change notice Supersedes

MCR08BT1 v. 4 20111102 Product data sheet MCR08BT1 v.3

Modifications: •The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate.

MCR08BT1 v. 3 20041129 Product data sheet MCR08BT1_HG v.2

MCR08BT1_HG v.2 20011023 Product specification MCR08BT1 v. 1

MCR08BT1 v.1 20010701 Product specification -

Product data sheet Rev. 4 — 2 November 2011 11 of 13

NXP Semiconductors MCR08BT1

Thyristor; logic level

11. Legal information

11.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

11.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short dat a sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre vail.

Product specificatio n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed be tween

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

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deemed to off er functions and qualities beyond those described in the

Product data sheet.

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Notwithstanding any damages that customer might incur for any reason

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customer for the products described herein shall be limited in accordance

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changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

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therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

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representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

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accepts no liability for any assistance with applications or customer product

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testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

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products are sold subject to the general terms and conditions of commercial

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 4 — 2 November 2011 12 of 13

NXP Semiconductors MCR08BT1

Thyristor; logic level

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automotive use. It i s neither qua lif ied nor test ed

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standard s, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product claims resulting from customer design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

11.4 Trademarks

Notice: All refe renced brands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

12. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors MCR08BT1

Thyristor; logic level

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 2 November 2011

Document id en tifier: MCR08BT1

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

13. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 1

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

7 Package information . . . . . . . . . . . . . . . . . . . . . 7

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

9 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

9.1 Mounting instructions . . . . . . . . . . . . . . . . . . . . 9

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12 Contact information. . . . . . . . . . . . . . . . . . . . . 12

13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13