06/22/11
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HEXFET® Power MOSFET
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
Description
Features
AUIRF2903Z
S
D
G
GDS
Gate Drain Source
lAdvanced Process Technology
lUltra Low On-Resistance
l175°C Operating Temperature
lFast Switching
lRepetitive Avalanche Allowed up to Tjmax
lLead-Free, RoHS Compliant
lAutomotive Qualified *
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient
temperature (TA) is 25°C, unless otherwise specified.
TO-220AB
AUIRF2903Z
D
S
D
G
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
AUTOMOTIVE GRADE
V
(BR)DSS
30V
R
DS(on)
typ. 1.9mΩ
max. 2.4mΩ
I
D (Silicon Limited)
260A
k
I
D (Package Limited)
160A
Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
A
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage
V
E
AS
Single Pulse Avalanche Energy (Thermally limited)
d
mJ
E
AS
(Tested ) Single Pulse Avalanche Energy Tested Value
h
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
g
mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
i
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case
j
––– 0.51
R
θCS
Case-to-Sink, Flat, Greased Surface
i
0.50 ––– °C/W
R
θJA
Junction-to-Ambient
i
––– 62
-55 to + 175
300 (1.6mm from case )
10 lbf
y
in (1.1N
y
m)
290
2.0
± 20
Max.
260
k
180
k
1020
160
k
820
290
See Fig.12a, 12b, 15, 16
PD -96379
AUIRF2903Z
2www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.10mH
RG = 25Ω, IAS = 75A, VGS =10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS .
Notes:
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is only applied to TO-220AB pakcage.
Rθ is measured at TJ approximately 90°C
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 160A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements.
** All AC and DC test condition based on former Package limited
current of 75A.
S
D
G
S
D
G
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 1.9 2.4 m
Ω
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V
gfs Forward Transconductance 120 ––– ––– S
I
DSS
Drain-to-Source Leakage Current ––– ––– 20
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 200
Gate-to-Source Reverse Leakage ––– ––– -200
Dynamic El ectrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge ––– 160 240
Q
gs
Gate-to-Source Charge ––– 51 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 58 –––
t
d(on)
Turn-On Delay Time ––– 24 –––
t
r
Rise Time ––– 100 –––
t
d(off)
Turn-Off Delay Time ––– 48 –––
t
f
Fall Time –––37–––
L
D
Internal Drain Inductance Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance from package
and center of die contact
C
iss
Input Capacitance ––– 6320 –––
C
oss
Output Capacitance ––– 1980 –––
C
rss
Reverse Transfer Capacitance ––– 1100 –––
C
oss
Output Capacitance ––– 5930 –––
C
oss
Output Capacitance ––– 2010 –––
C
oss
eff. Effective Output Capacitance ––– 3050 –––
Diode Characteristics
Par a meter Min . Typ . Ma x . Units
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 34 51 ns
Q
rr
Reverse Recovery Charge ––– 29 44 nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
nH
pF
A
μA
nA
nC
ns
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 24V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 24V
f
V
GS
= 10V
e
V
DD
= 15V
I
D
= 75A**
R
G
= 3.2 Ω
T
J
= 25°C, I
S
= 75A**, V
GS
= 0V
e
T
J
= 25°C, I
F
= 75A**, V
DD
= 15V
di/dt = 100A/μs
e
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 75A
e
**
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 30V, V
GS
= 0V
V
DS
= 30V, V
GS
= 0V, T
J
= 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
V
DS
= 10V, I
D
= 75A**
I
D
= 75A**
V
DS
= 24V
Conditions
V
GS
= 10V
e
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 20V
V
GS
= -20V
I
S
I
SM
––– 4.5
––– 7.5
–––
–––
–––
–––
–––
–––
160
k
1020
AUIRF2903Z
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† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions to AEC-Q101 requirements are noted in the qualification report.
††† Highest passing voltage
Qualification Information
†
Moisture Sensitivity Level
3L-TO-220
N/A
RoHS Compliant Yes
ESD
Machine Model Class M4(+/- 800V )
†††
(per AEC-Q101-002)
Human Body Model Class H2(+/- 4000V )
†††
(per AEC-Q101-001)
Charged Device Model Class C5(+/- 2000V )
†††
(per AEC-Q101-005)
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
AUIRF2903Z
4www.irf.com
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance
Vs. Drain Current
0.1 110 100 1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
ID, Drain-to-Source Current (A)
≤ 60μs PULSE WIDTH
Tj = 175°C
4.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0.1 110 100 1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
≤ 60μs PULSE WIDTH
Tj = 25°C
4.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate-to-Source Voltage (V)
0.1
1.0
10.0
100.0
1000.0
ID, Drain-to-Source Current
(Α)
VDS = 25V
≤ 60μs PULSE WIDTH
TJ = 25°C
TJ = 175°C
0 20 40 60 80 100 120 140 160 180
ID, Drain-to-Source Current (A)
0
40
80
120
160
200
240
Gfs, Forward Transconductance (S)
TJ = 25°C
TJ = 175°C
VDS = 10V
380μs PULSE WIDTH
AUIRF2903Z
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
10000
12000
C, Capacitance (pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0.0 0.4 0.8 1.2 1.6 2.0 2.4
VSD, Source-to-Drain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
0 40 80 120 160 200 240
QG Total Gate Charge (nC)
0
4
8
12
16
20
VGS, Gate-to-Source Voltage (V)
VDS= 24V
VDS= 15V
ID= 75A
0.1 1.0 10.0 100.0
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
DC
LIMITED BY PACKAGE
AUIRF2903Z
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature Fig 10. Normalized On-Resistance
Vs. Temperature
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
50
100
150
200
250
300
ID , Drain Current (A)
LIMITED BY PACKAGE
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 75A
VGS = 10V
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
Thermal Response ( Z
thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.08133 0.000044
0.2408 0.000971
0.18658 0.008723
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τC
Ci i/Ri
Ci= τi/Ri
AUIRF2903Z
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D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 14. Threshold Voltage Vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
25 50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
0
200
400
600
800
1000
1200
EAS, Single Pulse Avalanche Energy (mJ)
I D
TOP 26A
42A
BOTTOM 75A
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS(th) Gate threshold Voltage (V)
ID = 1.0A
ID = 1.0mA
ID = 250μA
ID = 150μA
QG
QGS QGD
VG
Charge
10 V
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Fig 15. Typical Avalanche Current Vs.Pulsewidth
Fig 16. Maximum Avalanche Energy
Vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
1
10
100
1000
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ΔTj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
300
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1% Duty Cycle
ID = 75A
AUIRF2903Z
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Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET®
Power MOSFETs
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* V
GS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
AUIRF2903Z
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TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
YWWA
XX or XX
Part Number
IR Logo
Lot Code
AUF2903Z
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
AUIRF2903Z
www.irf.com 11
Ordering Information
Base part
Package Type
Stand ard Pack
Complete Part Number
Form
Quantity
AUIRF2903Z
TO-220
Tube
50
AUIRF2903Z
AUIRF2903Z
12 www.irf.com
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at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
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