V
RRM
= 50 V - 1000 V
I
F
= 50 A
Features
• Types up to 1000 V V
RRM
GBPC-T/W Package
• High surge current capability
• Universal 3-way terminals: snap on, wire-around, or P.C board mounting
Mechanical Data
Case: Molded plastic with heat sink mounted in the bridge
Weight: 19 grams or 0.67 ounces
-
GBPC5006T/W th ru GBPC5010T/W
• Void-free junction by using vacuum soldering
Mounting position: Bolt down on heat-sink with silicone thermal
compound between bridge and mounting surface
• High temperature soldering guaranteed: 260⁰C/ 10
seconds at 5 lbs (2.3 kg) tension
• Integrally molded heat sink provides low thermal
resistance for maximum heat dissipation
Silicon Bridge
Rectifier
Terminals: Either nickel plated 0.25"(6.35 mm) Faston lugs or
0.040"(1.02 mm) diameter copper leads.
Polarity: Marked on body
Parameter Symbol Unit
Repetitive peak reverse voltage V
RRM
V
RMS reverse voltage V
RMS
V
DC blocking voltage V
DC
V
Continuous forward current I
F
A
Operating temperature T
j
°C
Storage temperature T
stg
°C
Parameter Symbol Unit
Diode forward voltage
Thermal characteristics
Thermal resistance, junction -
case R
thJC
°C/W
1.2
Maximum ratings, at T
j
= 25 °C, unless otherwise specified (GBPCXXXXT uses GBPC-T package while GBPCXXXXW
uses GBPC-W package)
50 50 50
400 400 400
600 1000
700
1000
500
800
1.2
-55 to 150
GBPC5010T/W
1.2
μA
-55 to 150 -55 to 150
-55 to 150 -55 to 150 -55 to 150
Conditions
V
T
C
= 25 °C, t
p
= 8.3 ms
T
C
≤ 50 °C
Conditions
GBPC5006T/W GBPC5008T/W GBPC5010T/W
800
560420
1.2
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
A
600
1.2
500 500
5
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
5
V
R
= 50 V, T
j
= 25 °C
I
F
= 25 A, T
j
= 25 °C
Reverse current I
R
V
F
V
R
= 50 V, T
j
= 125 °C
5
GBPC5006T/W GBPC5008T/W
1.2
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