Feb. 2009
1
CM75RL-24NF
APPLICATION
AC drive inverters & Servo controls, etc
MITSUBISHI IGBT MODULES
CM75RL-24NF
HIGH POWER SWITCHING USE
¡IC ..................................................................... 75A
¡VCES ......................................................... 1200V
¡Insulated Type
¡7-elements in a pack
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
B
NP
UVW
CN
81111
UPVPWP
2-φ5.5
MOUNTING HOLES
55
11.75
32
(13.5)
106 ±0.5
13.62
7
17 1740.78
12011
6-M5 NUTS
35
(19.75)
10.75
22 23 23 23
16
3
23.2
12
22
(SCREWING DEPTH)
12
12
12
12 12
AB
12
+1
–0.5
LABEL
Housing Type of A and B
(J.S.T.Mfg.Co.Ltd)
A = B8P-VH-FB-B, B = B2P-VH-FB-B
P
BU
N
CN-7
CN-8 CN-5
CN-6
UP-1
UP-2
V
CN-3
CN-4
VP-1
VP-2
W
CN-1
CN-2
WP-1
WP-2
CIRCUIT DIAGRAM
Feb. 2009
2
1200
±20
75
150
75
150
520
MITSUBISHI IGBT MODULES
CM75RL-24NF
HIGH POWER SWITCHING USE
V
V
A
A
A
A
W
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
G-E Short
C-E Short
DC, TC = 87°C*1
Pulse (Note 2)
Pulse (Note 2)
TC = 25°C
Symbol Parameter
Collector current
Emitter current
Conditions UnitRatings
VCES
VGES
IC
ICM
IE (
Note 1
)
IEM (
Note 1
)
PC (
Note 3
)
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
INVERTER PART
1200
±20
50
100
390
1200
50
V
V
A
A
W
V
A
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Repetitive peak reverse voltage
Forward current
G-E Short
C-E Short
DC, TC = 94°C*1
Pulse (Note 2)
TC = 25°C
Clamp diode part
Clamp diode part
Symbol Parameter
Collector current
Conditions UnitRatings
VCES
VGES
IC
ICM
PC (
Note 3
)
VRRM
IFM
BRAKE PART
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
2.5 ~ 3.5
350
°C
°C
Vrms
N • m
N • m
g
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M5 screw
Typical value
Symbol Parameter Conditions UnitRatings
Tj
Tstg
Viso
—
—
—
(COMMON RATING)
Feb. 2009
3
IC = 5.0mA
IC = 50A, VGE = 15V
VCE = 10V
VGE = 0V
IC = 7.5mA, VCE = 10V
IC = 75A, VGE = 15V
VCE = 10V
VGE = 0V
VCE = VCES, VGE = 0V
±VGE = VGES, VCE = 0V
VCC = 600V, IC = 50A, VGE = 15V
IF = 50A
IGBT part*1
Clamp diode part*1
VCE = VCES, VGE = 0V
±VGE = VGES, VCE = 0V
VCC = 600V, IC = 75A, VGE = 15V
VCC = 600V, IC = 75A
VGE = ±15V
RG = 4.2Ω, Inductive load
IE = 75A
IE = 75A, VGE = 0V
IGBT part (1/6 module)*1
FWDi part (1/6 module)*1
Case to heat sink, Thermal compound Applied (1/6 module)
*2
MITSUBISHI IGBT MODULES
CM75RL-24NF
HIGH POWER SWITCHING USE
1
0.5
3.0
—
11.5
1.0
0.23
—
100
50
300
350
120
—
3.8
0.24
0.36
—
63
mA
µA
nF
nF
nF
nC
ns
ns
ns
ns
µC
V
K/W
K/W
K/W
Ω
—
—
2.1
2.4
—
—
—
338
—
—
—
—
—
3
—
—
—
0.085
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.2
7V
V
68
ns
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
External gate resistance
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance
ICES
IGES
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Note 1
)
Qrr (
Note 1
)
VEC(
Note 1
)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
RG
Symbol Parameter
VGE(th)
VCE(sat)
Unit
Typ.
Limits
Min. Max.
Test conditions
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
INVERTER PART
1
0.5
3.0
—
8.5
0.75
0.17
—
3.8
0.32
0.43
63
mA
µA
nF
nF
nF
nC
V
K/W
K/W
Ω
—
—
2.1
2.4
—
—
—
250
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.3
7V
V
68
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Forward voltage drop
Thermal resistance
External gate resistance
Gate-emitter threshold voltage
Collector-emitter saturation voltage
ICES
IGES
Cies
Coes
Cres
QG
VFM
Rth(j-c)Q
Rth(j-c)R
RG
Symbol Parameter
VGE(th)
VCE(sat)
*1 : Case temperature (Tc) measured point is just under the chips.
If you use this value, Rth(f-a) should be measured just under the chips.
*2 : Typical value is measured by using thermally conductive grease of
λ
= 0.9[W/(m • K)].
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Unit
Typ.
Limits
Min. Max.
Test conditions
BRAKE PART
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Feb. 2009
4
MITSUBISHI IGBT MODULES
CM75RL-24NF
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
10
–2
7
5
3
2
10
–1
7
5
3
2
10
0
7
5
3
2
10
1
7
5
3
2
10
2
0
10
1
10
2
2
3
5
7
10
3
2
3
5
7
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
Tj = 25°C
11
12
10
9
VGE =
20V 15
13
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
COLLECTOR CURRENT I
C
(A)
VGE = 15V
Tj = 25°C
Tj = 125°C
10
8
6
4
2
02012 146810 16 18
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
Tj = 25°C
IC = 75A
IC = 150A
IC = 30A
12 435
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT IE (A)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
Tj = 25°C
Tj = 125°C
10
–1
2
10
0
357 2
10
1
357 2
10
2
357
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
Cies
Coes
Cres
VGE = 0V 10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
10
0
10
1
57
10
2
23 5723
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING TIME (ns)
COLLECTOR CURRENT I
C
(A)
Conditions:
VCC = 600V
VGE = ±15V
RG = 4.2Ω
Tj = 125°C
Inductive load
td(on)
td(off)
tf
tr
50
100
150
0246810 0
4
3
2
1
050 150100
0
Feb. 2009
5
MITSUBISHI IGBT MODULES
CM75RL-24NF
HIGH POWER SWITCHING USE
10
0
10
1
23 57
10
2
23 57
10
1
10
2
2
3
5
7
10
3
2
3
5
7
t
rr
I
rr
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT I
E
(A)
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
Conditions:
V
CC
= 600V
V
GE
= ±15V
R
G
= 4.2Ω
T
j
= 25°C
Inductive load
10
–3
10
1
10
0
10
–5
10
–4
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
10
–3
23 57 23 57 23 57 23 57
10
1
10
–2
10
–1
10
0
10
–3
10
–3
7
5
3
2
10
–2
7
5
3
2
10
–1
23 57 23 57
Single Pulse,
T
C
= 25°C
Under the chip
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j–c)
(ratio)
TIME (s)
IGBT part:
Per unit base =
R
th(j–c)
= 0.24K/W
FWDi part:
Per unit base =
Rth(j–c) = 0.36K/ W
10
–1
2
3
5
7
2
3
5
7
10
0
10
1
57
10
2
23 5723
RECOVERY LOSS vs. I
E
(TYPICAL)
RECOVERY LOSS (mJ/pulse)
EMITTER CURRENT I
E
(A)
Conditions:
V
CC
= 600V
V
GE
= ±15V
R
G
= 4.2Ω
T
j
= 125°C
Inductive load
C snubber at bus
Err
10
1
10
0
10
–1
2
3
5
7
2
3
5
7
10
0
10
1
57
10
2
23 5723
SWITCHING LOSS vs.
COLLECTOR CURRENT
(TYPICAL)
SWITCHING LOSS (mJ/pulse)
COLLECTOR CURRENT I
C
(A)
Conditions:
V
CC
= 600V
V
GE
= ±15V
R
G
= 4.2Ω
T
j
= 125°C
Inductive load
C snubber at bus
Esw(off)
Esw(on)
SWITCHING LOSS vs.
GATE RESISTANCE
(TYPICAL)
SWITCHING LOSS (mJ/pulse)
GATE RESISTANCE R
G
(Ω)
10
2
10
1
10
0
Conditions:
V
CC
= 600V
V
GE
= ±15V
I
C
= 75A
T
j
= 125°C
Inductive load
C snubber at bus
Esw(off)
Esw(on)
2
3
5
7
2
3
5
7
10
0
10
1
57
10
2
23 5723
10
2
10
1
10
0
2
3
5
7
2
3
5
7
10
0
10
1
57
10
2
23 5723
RECOVERY LOSS vs.
GATE RESISTANCE
(TYPICAL)
RECOVERY LOSS (mJ/pulse)
GATE RESISTANCE R
G
(Ω)
Conditions:
V
CC
= 600V
V
GE
= ±15V
I
E
= 75A
T
j
= 125°C
Inductive load
C snubber at bus
Err
Feb. 2009
6
200 400 600100 300 500
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(V)
GATE CHARGE Q
G
(nC)
V
CC
= 600V
V
CC
= 400V
I
C
= 75A
0
4
8
16
12
20
00
MITSUBISHI IGBT MODULES
CM75RL-24NF
HIGH POWER SWITCHING USE
