2N4424
SILICON
NPN TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4424 is a silicon
NPN epitaxial planar transistor designed for general
purpose amplifier applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 500 mA
Power Dissipation PD 625 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 200 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICBO V
CB=40V 30 nA
ICBO V
CB=40V, TA=100°C 10 A
ICES V
CE=40V 30 nA
IEBO V
EB=5.0V 100 nA
BVCBO I
C=10µA 60 V
BVCEO I
C=10mA 40 V
BVEBO I
E=0.1µA 5.0 V
VCE(SAT) I
C=50mA, IB=3.0mA 0.30 V
VBE(SAT) I
C=50mA, IB=3.0mA 0.85 V
hFE V
CE=4.5V, IC=2.0mA 180 540
hfe V
CE=4.5V, IC=2.0mA, f=1.0kHz 180
hfe V
CE=10V, IC=1.0mA, f=1.0kHz 180
hie V
CE=10V, IC=1.0mA, f=1.0kHz 5100
hoe V
CE=10V, IC=1.0mA, f=1.0kHz 14 µS
hre V
CE=10V, IC=1.0mA, f=1.0kHz 0.27 x10-3
R1 (26-July 2013)
www.centralsemi.com
2N4424
SILICON
NPN TRANSISTOR
LEAD CODE:
1) Emitter
2) Collector
3) Base
MARKING:
FULL PART NUMBER
TO-92 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R1 (26-July 2013)
2N4424
SILICON
NPN TRANSISTOR
TYPICAL ELECTRICAL CHARACTERISTICS
R1 (26-July 2013)
www.centralsemi.com
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(001)
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