CHA2395
Ref. : DSCHA23952240 -28-Aug.-02 1/6 Specif i cations subject t o change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
36-40GHz Low Noise Very High Gain Amplifier
GaAs Monolithic M i crowave IC
Description
The CHA2395 is a four-st age monolithic low
noise amplif ier . It is desig ned for a wide
range of applications, from m ilitary to
commercial communication systems.
The circuit is manufact ur ed with a HEMT
process : 0.25µm gate lengt h, via holes
throug h t he subst rate, air br idges and
electron beam gate lithography.
It is available in chip f or m.
Main Features
■ Broadband perf ormances
■ 3.0dB Noise Figur e
■ 30dB gain
■ ±1.0dB gain flatness
■ Low DC power consumption,
90mA@3.5V
■ Chip size : 2.07 X 1.11 X 0.10 mm
Vd Vd
Vg 1,2 Vg 3,4
In Out
Typical on wafer measurements :
Main Characteristics
Tamb. = 25°C
Symbol Parameter Min Typ Max Unit
Fop Operating fr equency range 36 40 GHz
G Small signal gain 25 30 dB
P1dB Output power at 1dB gain compression 8 10 dBm
NF Noise figure 3.0 4.0 dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
5
10
15
20
25
30
35
30 31 32 33 34 35 36 37 38 39 40
Frequency (GHz)
Gain (dB)
0
1
2
3
4
5
6
NF (d B)
CHA2395 36-40GHz Low Noise Amplifier
Ref. : DSCHA23952240 -28-Aug.-02 2/6 Specif i cations subject t o change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics
Tamb = +25°C, Vd= 3. 5V
Symbol Parameter Min Typ Max Unit
Fop Operating fr equency range (1) 36 40 GHz
G Small signal gain (1) 25 30 dB
∆G Small signal gain flat ness (1) ±1.5 dB
∆Gsb Gain ripple over 40MHz ( within -30 ; +75°C ) 0.5 dBpp
Is Reverse isolation (1) 35 40 dB
P1dB Output power at 1dB gain compression 8 10 dBm
VSWRin Input VSWR (1) 2.5:1 3.0:1
VSWRout Output VSWR (1) 2.5:1 3.0:1
NF Noise fig ure (2) 3.0 4.0 dB
Vdc DC Voltage Vd
Vg
-2 3.5 4
+0.4 V
V
Id Bias cur rent (2) 90 mA
(1) These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
(2) 90 mA is the typical bias current used for on wafer measurements, with adjusting Vg1,2
voltage for optimum noise figure and Vg3,4 adjusting for maximum gain.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol Parameter Values Unit
Vd Drain bias voltage 4.5 V
Vg Gate bias voltage -2.0 to +0.4 V
Vdg Maximum drain t o gate voltage (Vd - Vg) +5.0 V
Id Drain bias current 200 mA
Pin Maximum peak input power overdrive (2) +15 dBm
Ta Operating temperature r ange -40 to +85 °C
Tstg Storage t em per ature rang e -55 to +125 °C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
36-40GHz Low Noise Amplifier CHA2395
Ref. : DSCHA23952240 -28-Aug.-02 3/6 Specif i cations subject t o change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Scattering Para meter s ( On wafer Sij measurements )
Bias Conditions : Vd= 3.5 Volt, I d = 90 m A.
Freq.
GHz S11
dB S11
/
//
/° S12
dB S12
/
//
/° S21
dB S21
/
//
/° S22
dB S22
/
//
/°
10 -5,24 -150,46 -56,39 -137,29 -24,05 -93,70 -6,44 -135,98
11 -5,01 -158,16 -55,20 -143,40 -25,15 -112,11 -6,52 -142,09
12 -4,78 -165,56 -53,92 -154,87 -26,75 -128,23 -6,55 -148,02
13 -4,69 -174,08 -51,99 -164,65 -26,78 -139,11 -6,44 -151,89
14 -4,48 178,30 -50,31 175,46 -29,21 -171,28 -6,37 -157,82
15 -4,30 170,74 -50,32 148,72 -29,88 -145,86 -6,22 -163,81
16 -4,14 163,09 -49,22 142,18 -31,36 -164,90 -6,10 -169,58
17 -4,06 155,51 -49,15 127,08 -32,88 -167,67 -5,89 -175,56
18 -3,96 147,86 -48,70 105,03 -35,34 177,24 -5,79 177,73
19 -3,90 139,92 -51,67 105,23 -38,52 -157,62 -5,56 172,92
20 -3,86 131,40 -50,35 95,30 -38,79 -162,11 -5,26 165,80
21 -3,87 122,89 -49,65 83,53 -38,83 -167,49 -4,99 158,13
22 -3,89 113,01 -49,59 72,64 -46,84 157,47 -4,88 150,61
23 -4,01 103,05 -49,29 63,32 -41,57 21,50 -4,75 142,43
24 -4,20 92,06 -48,05 44,03 -30,98 8,81 -4,67 134,00
25 -4,54 79,42 -48,35 23,21 -23,89 -1,06 -4,58 124,88
26 -5,02 65,00 -49,93 -1,87 -17,47 -4,35 -4,53 115,26
27 -5,79 47,39 -52,57 -14,93 -11,19 -13,07 -4,53 104,69
28 -6,86 25,74 -58,44 -26,41 -4,59 -23,29 -4,50 93,03
29 -8,43 -4,01 -63,19 36,76 2,43 -38,25 -4,51 79,20
30 -10,32 -48,95 -55,24 45,06 10,00 -60,29 -4,54 62,45
31 -10,65 -117,68 -53,31 -1,55 18,04 -93,20 -4,40 39,47
32 -8,00 166,44 -53,65 -52,02 25,85 -144,54 -4,42 3,69
33 -8,21 89,15 -79,13 17,74 30,33 144,38 -6,32 -46,81
34 -11,99 29,31 -60,45 -9,35 30,68 82,74 -9,78 -94,59
35 -15,87 -33,40 -59,01 -74,65 30,91 36,21 -10,50 -134,35
36 -14,87 -104,81 -57,53 -151,67 31,07 -6,18 -10,26 -167,64
37 -11,78 -165,28 -56,31 150,87 31,05 -47,23 -9,47 163,94
38 -9,85 150,77 -54,01 109,01 30,82 -86,98 -9,53 139,99
39 -9,90 110,22 -53,25 84,99 30,03 -124,36 -10,02 120,62
40 -10,31 70,60 -52,00 74,63 29,21 -159,55 -10,97 107,97
41 -11,12 23,32 -49,03 82,09 28,21 167,67 -12,82 99,68
42 -10,97 -34,96 -44,98 72,62 26,87 135,99 -12,78 101,14
43 -11,41 -81,68 -44,03 33,59 25,36 111,44 -12,23 88,12
44 -10,12 -107,79 -43,67 15,35 24,92 87,03 -14,15 73,36
45 -9,49 -124,05 -43,94 -3,05 24,57 60,05 -15,44 63,47
46 -8,37 -137,10 -42,57 -16,03 24,33 31,65 -18,63 37,49
47 -6,94 -141,65 -42,19 -36,05 24,14 -0,62 -26,50 -44,90
48 -4,56 -148,72 -42,90 -62,08 23,38 -38,45 -16,32 -150,01
49 -2,37 -162,95 -45,30 -98,56 21,22 -76,12 -11,15 172,71
50 -1,12 -178,98 -46,39 -149,92 18,32 -110,54 -9,10 145,34
CHA2395 36-40GHz Low Noise Amplifier
Ref. : DSCHA23952240 -28-Aug.-02 4/6 Specif i cations subject t o change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical on Wafer Measurements
Tamb = +25°C
Vds=3.5V and Id=90mA
5
10
15
20
25
30
35
30 31 32 33 34 35 36 37 38 39 40
Frequency (GHz)
Gain (dB)
0
1
2
3
4
5
6
NF (dB )
-20
-10
0
10
20
30
30 35 40 45 50
Frequency (GHz)
Ga in&Rlo s s ( d B)
dBS11 dBS21 dBS22
36-40GHz Low Noise Amplifier CHA2395
Ref. : DSCHA23952240 -28-Aug.-02 5/6 Specif i cations subject t o change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Chip Assembly and Mechanical Data
IN OUT
100pF
To Vdd DC Drain supply feed
To Vgs2 DC Gate supply feed
To Vgs1 DC Gate supply feed 100pF 100pF
Note : Supply f eed should be capacit ively bypassed.
2070 +/-35
1000
700
1110 +/-35
520
880
1480
520
Bonding pad positions.
( Chip thick ness : 100µm. All dimensions ar e in m icr om et ers )
CHA2395 36-40GHz Low Noise Amplifier
Ref. : DSCHA23952240 -28-Aug.-02 6/6 Specif i cations subject t o change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typi cal Bias Tuning for Low Noise Operation
The circuit schematic is given below :
IN OUT
Vd
Vg 1,2 Vg 3,4
Vd
100 100 50 50
For low noise operation, a separ ate acces s to the gate voltages of the two first stages ( Vg1,2 ), and of
the two last stage ( Vg3,4 ) is provided. Nom inal bias is obtained for a typical curr ent of 60 m A for the
output stages and 30 mA for the two first stages ( 90 mA for the amplifier ).
The first step to bias the amplifier is to tune Vg1,2 = -1V, and Vg3,4 to drive 60 mA for the full amplifier.
Then Vg1,2 is increased to obtain 90 mA of current through the amplifier. A fine tuning of the noise
figure may be obtained by modifying the Vg1,2 bias voltage, but keeping the previous value for Vg3,4.
It is possible to reduce the total DC current by biasing Vg3,4 to a more negative value. The
consequences will be a reduction of gain and of the output power capabilities of the amplifier.
Vd could be adjust in such a way that the Vds ( Drain to Source voltage of the internal transistor ) is
kept below 3.5V, knowing that all the transistors have the same sizes and with the given resistors.
Orderi ng I nfor m ati on
Chip for m : CHA2395-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
