PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
PRODUCT: ZEN132V230A16LS
DOCUMENT: SCD27362
REV LETTER: D
REV DATE: JULY 26, 2016
PAGE NO.: 1 OF 8
© 2016 Littelfuse, Inc. littelfuse.com
Specifications are subject to change without notice.
Revised July 26, 2016
Specification Status: Released
GENERAL DESCRIPTION
Littelfuse PolyZen devices are polymer
enhanced, precision Zener diode micro-
assemblies. They offer resettable
protection against multi-Watt fault
events without the need for multi-Watt
heat sinks.
The Zener diode used for voltage
clamping in a PolyZen micro-assembly
was selected due to its relatively flat voltage vs current
response. This helps improve output voltage clamping,
even when input voltage is high and diode currents are
large.
An advanced feature of the PolyZen micro-assembly is that
the Zener diode is thermally coupled to a resistively non-
linear, polymer PTC (positive temperature coefficient) layer.
This PTC layer is fully integrated into the device, and is
electrically in series between VIN and the diode clamped
VOUT.
This advanced PTC layer responds to either extended
diode heating or overcurrent events by transitioning from a
low to high resistance state, also known as” tripping”. A
tripped PTC will limit current and generate voltage drop. It
helps to protect both the Zener diode and the follow on
electronics and effectively increases the diode’s power
handling capability.
The polymer enhanced Zener diode helps protect sensitive
portable electronics from damage caused by inductive
voltage spikes, voltage transients, incorrect power supplies
and reverse bias. These devices are particularly suitable
for portable electronics and other low-power DC devices.
BENEFITS
Stable Zener diode helps shield
downstream electronics from
overvoltage and reverse bias
Trip events shut out overvoltage and
reverse bias sources
Analog nature of trip events minimizes
upstream inductive spikes
Minimal power dissipation requirements
Single component placement
FEATURES
Overvoltage transient suppression
Stable VZ vs fault current
Time delayed, overvoltage trip
Time delayed, reverse bias trip
Multi-Watt power handling capability
Integrated device construction
RoHS Compliant
TARGET APPLICATIONS
DC power port protection in portable
electronics
DC power port protection for systems
using
barrel jacks for power input
Internal overvoltage & transient
suppression
DC output voltage regulation.
TYPICAL APPLICATION BLOCK DIAGRAM
GND
VIN VOUT
Regulated
Output RLoad
Protected downstream
electronics
1
2
3
+
Power Supply
(External or Internal) PolyZen Protected Electronics
PolyZen
Device
GND
VIN VOUT
Regulated
Output RLoad
Protected downstream
electronics
1
2
3
+
Power Supply
(External or Internal) PolyZen Protected Electronics
GND
VIN VOUT
Regulated
Output RLoad
Protected downstream
electronics
1
2
3
+
Power Supply
(External or Internal) PolyZen Protected Electronics
PolyZen
Device
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
PRODUCT: ZEN132V230A16LS
DOCUMENT: SCD27362
REV LETTER: D
REV DATE: JULY 26, 2016
PAGE NO.: 2 OF 8
© 2016 Littelfuse, Inc. littelfuse.com
Specifications are subject to change without notice.
Revised July 26, 2016
CONFIGURATION INFORMATION
Pin Configuration (Top View)
PIN DESCRIPTION
Pin
Number
Pin Name
Pin Function
1
VIN
VIN. Protected input to Zener diode.
2
GND
GND
3
VOUT
VOUT. Zener regulated voltage output
BLOCK DIAGRAM
DEFINITION of TERMS
IPTC
Current flowing through the PTC portion of the
circuit
IFLT
RMS fault current flowing through the diode
IOUT
Current flowing out the VOUT pin of the device
Trip Event
A condition where the PTC transitions to a high
resistance state, thereby significantly limiting IPTC
and related currents.
Trip
Endurance
Time the PTC portion of the device remains in a
high resistance state.
2.21 mm
(0.087”)
0.94 mm
(0.037”)
0.33 mm
(0.013”)
0.56 mm
(0.022”)2.88 mm
(0.1135”)0.56 mm
(0.022”)
0.94 mm
(0.037”)
2.21 mm
(0.087”)
0.94 mm
(0.037”)
0.33 mm
(0.013”)
0.56 mm
(0.022”)2.88 mm
(0.1135”)0.56 mm
(0.022”)
0.94 mm
(0.037”)
2
3
VIN
GND
VOUT
1
2
3
VIN
GND
VOUT
1
GND
IFLT
VIN
IOUT
IPTC, IHOLD
VOUT
GND
IFLT
VIN
IOUT
IPTC, IHOLD
VOUT
GND
VIN
VOUT
Zener
Diode
Polymer PTC
GND
VIN
VOUT
Zener
Diode
Polymer PTC
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
PRODUCT: ZEN132V230A16LS
DOCUMENT: SCD27362
REV LETTER: D
REV DATE: JULY 26, 2016
PAGE NO.: 3 OF 8
© 2016 Littelfuse, Inc. littelfuse.com
Specifications are subject to change without notice.
Revised July 26, 2016
GENERAL SPECIFICATIONS
Operating Temperature
-40º to +85ºC
Storage Temperature
-40º to +85ºC
ELECTRICAL CHARACTERISTICS1-3, 11 (Typical unless otherwise specified)
VZ4
(V)
Izt4
(A)
IHOLD5
@20ºC
(A)
Leakage Current
R Typ6
(Ohms)
R1Max7
(Ohms)
VInt Max8
(V)
IFLT Max9
Tripped Power
Dissipation 10
Max
VINT
Max
(V)
Test
Current
(A)
IFLT
Max
(A)
Test
Voltage
(V)
Value
(W)
Test
Voltage
(V)
Min
Typ
Max
Test
Voltage
Max
Current
(mA)
13.2
13.4
13.6
0.1
2.3
13.15
5
0.04
0.06
16V
5A
+2
-40
+20
-12V
0.8
20
Note 1: Electrical characteristics determined at 25ºC unless otherwise specified.
Note 2: This device is intended for limited fault protection. Repeated trip events or extended trip endurance can degrade the
device and may affect performance to specifications. Performance impact will depend on multiple factors including,
but not limited to, voltage, trip current, trip duration, trip cycles, and circuit design. For details or ratings specific to
your application contact Littelfuse Connectivity Circuit Protection directly.
Note 3: Specifications developed using 1.0 ounce 0.045” wide copper traces on dedicated FR4 test boards. Performance in
your application may vary.
Note 4: Izt is the current at which Vz is measured (VZ = VOUT). Additional VZ values are available on request.
Note 5: IHOLD: Maximum steady state IPTC (current entering or exiting the VIN pin of the device) that will not generate a trip
event at the specified temperature. Specification assumes IFLT (current flowing through the Zener diode) is sufficiently
low so as to prevent the diode from acting as a heat source. Testing is conducted with an “open” Zener.
Note 6: R Typ: Resistance between VIN and VOUT pins during normal operation at room temperature.
Note 7: R1Max: The maximum resistance between VIN and VOUT pins at room temperature, one hour after 1st trip or after reflow
soldering.
Note 8: VINT Max: VINT Max relates to the voltage across the PPTC portion of the PolyZen device (VIN-VOUT). VINT Max is
defined as the voltage (VIN-VOUT) at which typical qualification devices (98% devices, 95% confidence) survived at
least 100 trip cycles and 24 hours’ trip endurance at the specified voltage (VIN-VOUT) and current (IPTC). VINT Max
testing is conducted using a "shorted" load (VOUT = 0 V). VINT Max is a survivability rating, not a performance rating.
Note 9: IFLT Max: IFLT Max relates to the stead state current flowing through the diode portion of the PolyZen device in a fault
condition, prior to a trip event. IFLT Max is defined as the current at which typical qualification devices (12 parts per lot
from 3 lots) survived 100 test cycles. RMS fault currents above IFLT Max may permanently damage the diode portion
of the PolyZen device. Testing is conducted with NO load connected to VOUT, such that IOUT = 0. “Test voltage” is
defined as the voltage between VIN to GND and includes the PolyZen Diode drop. Specification is dependent on the
direction of current flow through the diode. IFLT Max is a survivability rating, not a performance rating.
Note 10: The power dissipated by the device when in the “tripped” state, as measured on Littelfuse test boards (see note 3).
Note 11: Specifications based on limited qualification data and subject to change.
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
PRODUCT: ZEN132V230A16LS
DOCUMENT: SCD27362
REV LETTER: D
REV DATE: JULY 26, 2016
PAGE NO.: 4 OF 8
© 2016 Littelfuse, Inc. littelfuse.com
Specifications are subject to change without notice.
Revised July 26, 2016
MECHANICAL DIMENSIONS
SOLDER REFLOW RECOMMENDATIONS:
Classification Reflow Profiles
Profile Feature
Pb-Free Assembly
Average Ramp-Up Rate (Tsmax to Tp)
3° C/second max.
Preheat
• Temperature Min (Tsmin)
150 °C
• Temperature Max (Tsmax)
200 °C
• Time (tsmin to tsmax)
60-180 seconds
Time maintained above:
• Temperature (TL)
217 °C
• Time (tL)
60-150 seconds
Peak/Classification Temperature
(Tp)
260 °C
Time within 5 °C of actual Peak
Temperature (tp)
20-40 seconds
Ramp-Down Rate
6 °C/second max.
Time 25 °C to Peak Temperature
8 minutes max.
Min
Typical
Max
Length
L
3.85 mm
(0.152”)
4 mm
(0.16”)
4.15 mm
(0.163")
Width
W
3.85 mm
(0.152”)
4 mm
(0.16”)
4.15 mm
(0.163")
Height
H
1.4mm
(0.055”)
1.7 mm
(0.067”)
2.0 mm
(0.081”)
Length Diode
Ld
-
3.0 mm
(0.118”)
-
Height Diode
Hd
-
1.0 mm
(0.039”)
-
Offset
O1
-
0.6 mm
(0.024”)
-
Offset
O2
-
0.7 mm
(0.028”)
-
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
PRODUCT: ZEN132V230A16LS
DOCUMENT: SCD27362
REV LETTER: D
REV DATE: JULY 26, 2016
PAGE NO.: 5 OF 8
© 2016 Littelfuse, Inc. littelfuse.com
Specifications are subject to change without notice.
Revised July 26, 2016
PACKAGING
Packaging
Tape & Reel
Standard Box
ZENXXXVXXXAXXLS
3,000
15,000
Reel Dimensions for PolyZen Devices
Amax = 330
Nmin = 102
W1 = 8.4
W2 = 11.1
Matte Finish These Area
Amax
Nmin
Matte Finish These Area
Amax
Nmin
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
PRODUCT: ZEN132V230A16LS
DOCUMENT: SCD27362
REV LETTER: D
REV DATE: JULY 26, 2016
PAGE NO.: 6 OF 8
© 2016 Littelfuse, Inc. littelfuse.com
Specifications are subject to change without notice.
Revised July 26, 2016
Taped Component Dimensions for PolyZen Devices
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
PRODUCT: ZEN132V230A16LS
DOCUMENT: SCD27362
REV LETTER: D
REV DATE: JULY 26, 2016
PAGE NO.: 7 OF 8
© 2016 Littelfuse, Inc. littelfuse.com
Specifications are subject to change without notice.
Revised July 26, 2016
Typical Fault Response: ZEN132V230A16LS
20 V/2 A Current Limited Source (IOUT=0)
0
2
4
6
8
10
12
14
16
18
20
22
0.00 0.05 0.10 0.15 0.20 0.25
Time (Sec)
V (V) or I (A)
Vin (V)
Vout (V)
I FLT (A)
Pulse IV (300µsec Pulse)
10
11
12
13
14
0.00001 0.0001 0.001 0.01 0.1 1
Current: IFLT (A)
Voltage: Vout (V)
ZEN132V230A16LS
Pulse IV (300µsec Pulse)
-10
-5
0
5
-2 0 2 4 6 8 10 12 14
Voltage: Vout (V)
Current: IFLT (A)
ZEN132V230A16LS
VOUT Peak vs. IFLT RMS(IOUT=0)
13.0
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
0.0 0.5 1.0 1.5 2.0
IFLT RMS (A)
VOUT Peak (V)
ZEN132V230A16LS
Time to Trip vs. IFLT (IOUT=0)
0.0
0.1
1.0
10.0
100.0
0.0 0.5 1.0 1.5 2.0
IFLTRMS (A)
Time to Trip (Sec)
ZEN132V230A16LS
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
PRODUCT: ZEN132V230A16LS
DOCUMENT: SCD27362
REV LETTER: D
REV DATE: JULY 26, 2016
PAGE NO.: 8 OF 8
© 2016 Littelfuse, Inc. littelfuse.com
Specifications are subject to change without notice.
Revised July 26, 2016
VOUT Peak vs. IFLT (IOUT=0)
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
-40 -30 -20 -10 0
IFLTRMS (A)
VOUT Peak (V)
ZEN132V230A16LS
Time To Trip vs. IFLT (IOUT=0)
0.001
0.010
0.100
1.000
10.000
100.000
-40 -30 -20 -10 0
IFLTRMS (A)
Time To Trip (Sec)
ZEN132V230A16LS
Temperature Effect on IHold (IFLT = 0)
0
0.5
1
1.5
2
2.5
3
3.5
4
-40 -20 0 20 40 60 80 100
Ambient Temperature (C)
IHold (A)
ZEN132V230A16LS
Time to Trip vs. IPTC RMS (IFLT=0)
0.001
0.010
0.100
1.000
10.000
100.000
1000.000
010 20 30 40
IPTC RMS (A)
Time to Trip (Sec)
ZEN132V230A16LS
Temperature Effect on RTYP
0.00
0.02
0.04
0.06
0.08
0.10
20 40 60 80
Ambient Temperature (C)
RTYP (Ohm)
ZEN132V230A16LS
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
PRODUCT: ZEN132V230A16LS
DOCUMENT: SCD27362
REV LETTER: D
REV DATE: JULY 26, 2016
PAGE NO.: 9 OF 8
© 2016 Littelfuse, Inc. littelfuse.com
Specifications are subject to change without notice.
Revised July 26, 2016
Materials Information
ROHS Compliant ELV Compliant Pb-Free
Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving,
Life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired
operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation.
Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall
not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse
documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse.