NPN HIGH VOLTAGE SILICON TRANSISTORS 2N3724
2N3725
TO-39
Metal Can Package
ELECTRICAL CHARACTERISTICS (TA=25º C unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION 2N3724 2N3725 UNITS
DC Current Gain hFE*I
C=10mA,VCE=1V >30 >30
IC=100mA,VCE=1V 60 - 150 60 - 150
IC=300mA,VCE=1V >40 >40
IC=500mA,VCE=1V >35 >35
IC=800mA,VCE=2V >25 >20
IC=1A,VCE=5V >30 >25
TA = - 55º C
IC=100mA,VCE=1V >30 >30
IC=500mA,VCE=1V >20 >20
Collector Emitter Saturation Voltage VCE(Sat) *I
C=10mA, IB=1mA <0.25 <0.25 V
IC=100mA, IB=10mA <0.20 <0.26
IC=300mA, IB=30mA <0.32 <0.40
IC=500mA, IB=50mA <0.42 <0.52
IC=800mA, IB=80mA <0.65 <0.80
IC=1A, IB=100mA <0.75 <0.95
Base Emitter Saturation Voltage VBE(Sat) *I
C=10mA, IB=1mA <0.76 <0.76 V
IC=100mA, IB=10mA <0.86 <0.86
IC=300mA, IB=30mA <1.1 <1.1
IC=500mA, IB=50mA 0.8 - 1.1 0.8 - 1.1
IC=800mA, IB=80mA <1.5 <1.5
IC=1A, IB=100mA <1.7 <1.7
SMALL SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product fT** IC=50mA, VCE=10V >300 >300 MHz
f=100MHz
Output Capacitance Cobo VCB=10V, IE=0, f=1MHz <12 <10 pF
Input Capacitance Cibo VEB=0.5V, IC=0, f=1MHz <55 <55 pF
*Pulse Test: Pulse Width <300µs, Duty Cycle <1%
** fT = lhfel. ftest.
SWITCHING CHARACTERISTICS
DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS
Delay Time tdVCC=30V, VBE(Off)=3.8V -10 ns
Rise Time trIC=500mA, IB1=50mA -30
Turn On Time
ton -35
Storage Time tsVCC=30V, IC=500mA -50 ns
Fall Time tfIB1=IB2=50mA -25
Turn Off Time
toff
-60
Continental Device India Limited Data Sheet Page 2 of 4