IRLR/U2905ZPbF
2www.irf.com
S
D
G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V
∆V(BR)DSS
∆TJ Breakdown Voltage Temp. Coefficient ––– 0.053 ––– V/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 11 13.5 mΩ
––– ––– 20 mΩ
––– ––– 22.5 mΩ
VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V
gfs Forward Transconductance 25 ––– ––– S
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to-Source Reverse Leakage ––– ––– -200
QgTotal Gate Charge ––– 23 35
Qgs Gate-to-Source Charge ––– 8.5 ––– nC
Qgd Gate-to-Drain ("Miller") Charge ––– 12 –––
td(on) Turn-On Delay Time ––– 14 –––
trRise Time ––– 130 –––
td(off) Turn-Off Delay Time ––– 24 ––– ns
tfFall Time ––– 33 –––
LDInternal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
LSInternal Source Inductance ––– 7.5 ––– from package
and center of die contact
Ciss Input Capacitance ––– 1570 –––
Coss Output Capacitance ––– 230 –––
Crss Reverse Transfer Capacitance ––– 130 ––– pF
Coss Output Capacitance ––– 840 –––
Coss Output Capacitance ––– 180 –––
Coss eff. Effective Output Capacitance ––– 290 –––
Source-Drain Ratin
s and Characteristics
Parameter Min. Typ. Max. Units
ISContinuous Source Current ––– ––– 42
(Body Diode) A
ISM Pulsed Source Current ––– ––– 240
(Body Diode)
c
VSD Diode Forward Voltage ––– ––– 1.3 V
trr Reverse Recovery Time ––– 22 33 ns
Qrr Reverse Recovery Charge ––– 14 21 nC
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = 5.0V, ID = 30A
e
VGS = 16V
VGS = -16V
VDS = 44V
Conditions
VGS = 5.0V
e
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 36A, VGS = 0V
e
TJ = 25°C, IF = 36A, VDD = 28V
di/dt = 100A/µs
e
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 36A
e
VDS = VGS, ID = 250µA
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
VGS = 4.5V, ID = 15A
e
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
f
VGS = 5.0V
e
VDD = 28V
ID = 36A
RG = 15 Ω
VDS = 25V, ID = 36A
ID = 36A