IRLU2905ZPBF - INFINEON TECHNOLOGIES AG

IRLR2905ZPbF

IRLU2905ZPbF

HEXFET® Power MOSFET

VDSS = 55V

RDS(on) = 13.5mΩ

ID = 42A

10/1/10

www.irf.com 1

This HEXFET® Power MOSFET utilizes the latest

processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of

this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating These features combine

to make this design an extremely efficient and

reliable device for use in a wide variety of applications.

Description

Logic Level

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

Features

D-Pak

IRLR2905ZPbF

I-Pak

IRLU2905ZPbF

HEXFET® is a registered trademark of International Rectifier.

Absolute Maximum Ratings

Parameter Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)

IDM

d D

urrent

PD @TC = 25°C Power Dissipation W

Linear Derating Factor W/°C

VGS Gate-to-Source Voltage V

EAS (Thermally limited)

anc

ner

EAS (Tested )

anc

ner

gy T

este

d V

IAR

anc

urrent



EAR

epet

anc

ner

TJ Operating Junction and

TSTG Storage Temperature Range °C

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Thermal Resistance

Parameter Typ. Max. Units

RθJC

unct

on-to-

ase

––– 1.38

RθJA

unct

on-to-

ent

(PCB

mount

)

––– 40 °C/W

RθJA

unct

on-to-

ent

––– 110

-55 to + 175

300 (1.6mm from case )

10 lbf

in (1.1N

110

0.72

± 16

Max.

240

See Fig.12a, 12b, 15, 16

PD - 95774B

IRLR/U2905ZPbF

2www.irf.com

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V

∆V(BR)DSS

∆TJ Breakdown Voltage Temp. Coefficient ––– 0.053 ––– V/°C

RDS(on) Static Drain-to-Source On-Resistance ––– 11 13.5 mΩ

––– ––– 20 mΩ

––– ––– 22.5 mΩ

VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V

gfs Forward Transconductance 25 ––– ––– S

IDSS Drain-to-Source Leakage Current ––– ––– 20 µA

––– ––– 250

IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA

Gate-to-Source Reverse Leakage ––– ––– -200

QgTotal Gate Charge ––– 23 35

Qgs Gate-to-Source Charge ––– 8.5 ––– nC

Qgd Gate-to-Drain ("Miller") Charge ––– 12 –––

td(on) Turn-On Delay Time ––– 14 –––

trRise Time ––– 130 –––

td(off) Turn-Off Delay Time ––– 24 ––– ns

tfFall Time ––– 33 –––

LDInternal Drain Inductance ––– 4.5 ––– Between lead,

nH 6mm (0.25in.)

LSInternal Source Inductance ––– 7.5 ––– from package

and center of die contact

Ciss Input Capacitance ––– 1570 –––

Coss Output Capacitance ––– 230 –––

Crss Reverse Transfer Capacitance ––– 130 ––– pF

Coss Output Capacitance ––– 840 –––

Coss Output Capacitance ––– 180 –––

Coss eff. Effective Output Capacitance ––– 290 –––

Source-Drain Ratin

s and Characteristics

Parameter Min. Typ. Max. Units

ISContinuous Source Current ––– ––– 42

(Body Diode) A

ISM Pulsed Source Current ––– ––– 240

(Body Diode)

c

VSD Diode Forward Voltage ––– ––– 1.3 V

trr Reverse Recovery Time ––– 22 33 ns

Qrr Reverse Recovery Charge ––– 14 21 nC

ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

VGS = 5.0V, ID = 30A

VGS = 16V

VGS = -16V

VDS = 44V

Conditions

VGS = 5.0V

VGS = 0V

VDS = 25V

ƒ = 1.0MHz

MOSFET symbol

showing the

integral reverse

p-n junction diode.

TJ = 25°C, IS = 36A, VGS = 0V

TJ = 25°C, IF = 36A, VDD = 28V

di/dt = 100A/µs

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 36A

VDS = VGS, ID = 250µA

VDS = 55V, VGS = 0V

VDS = 55V, VGS = 0V, TJ = 125°C

VGS = 4.5V, ID = 15A

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

VGS = 0V, VDS = 44V, ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 44V

VGS = 5.0V

VDD = 28V

ID = 36A

RG = 15 Ω

VDS = 25V, ID = 36A

ID = 36A

IRLR/U2905ZPbF

www.irf.com 3

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance

Vs. Drain Current

2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

VGS, Gate-to-Source Voltage (V)

1.0

10.0

100.0

1000.0

ID, Drain-to-Source Current (Α)

VDS = 10V

≤ 60µs PULSE WIDTH

TJ = 25°C

TJ = 175°C

0 1020304050

ID, Drain-to-Source Current (A)

Gfs, Forward Transconductance (S)

TJ = 25°C

TJ = 175°C

VDS = 8.0V

380µs PULSE WIDTH

0.1 110 100

VDS, Drain-to-Source Voltage (V)

100

1000

ID, Drain-to-Source Current (A)

≤ 60µs PULSE WIDTH

Tj = 25°C

3.0V

VGS

TOP 10V

9.0V

7.0V

5.0V

4.5V

4.0V

3.5V

BOTTOM 3.0V

0.1 110 100

VDS, Drain-to-Source Voltage (V)

100

1000

ID, Drain-to-Source Current (A)

≤ 60µs PULSE WIDTH

Tj = 175°C

3.0V

VGS

TOP 10V

9.0V

7.0V

5.0V

4.5V

4.0V

3.5V

BOTTOM 3.0V

IRLR/U2905ZPbF

4www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

110 100

VDS, Drain-to-Source Voltage (V)

500

1000

1500

2000

2500

C, Capacitance (pF)

Coss

Crss

Ciss

VGS = 0V, f = 1 MHZ

Ciss = C gs + Cgd, C ds SHORTED

Crss = Cgd

Coss = Cds + Cgd

0 1020304050

QG Total Gate Charge (nC)

VGS, Gate-to-Source Voltage (V)

VDS= 44V

VDS= 28V

VDS= 11V

ID= 36A

0.2 0.6 1.0 1.4 1.8 2.2

VSD, Source-to-Drain Voltage (V)

0.1

1.0

10.0

100.0

1000.0

ISD, Reverse Drain Current (A)

TJ = 25°C

TJ = 175°C

VGS = 0V

1 10 100 1000

VDS , Drain-toSource Voltage (V)

0.1

100

1000

ID, Drain-to-Source Current (A)

Tc = 25°C

Tj = 175°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100µsec

IRLR/U2905ZPbF

www.irf.com 5

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10. Normalized On-Resistance

Vs. Temperature

1E-006 1E-005 0.0001 0.001 0.01

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

Thermal Response ( Z thJC )

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W) τi (sec)

0.765 0.000269

0.6141 0.001614

τJ

τ1

τ2

R1R2

τC

Ci i/Ri

Ci= τi/Ri

25 50 75 100 125 150 175

TC , Case Temperature (°C)

ID , Drain Current (A)

LIMITED BY PACKAGE

-60 -40 -20 020 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

0.5

1.0

1.5

2.0

RDS(on) , Drain-to-Source On Resistance

(Normalized)

ID = 30A

VGS = 5.0V

IRLR/U2905ZPbF

6www.irf.com

Charge

D.U.T. V

3mA

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

10 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

Fig 14. Threshold Voltage Vs. Temperature

0.01

Ω

D.U.T

VDS

-V

DRIVER

15V

20V

VGS

25 50 75 100 125 150 175

Starting TJ, Junction Temperature (°C)

120

160

200

240

EAS, Single Pulse Avalanche Energy (mJ)

I D

TOP 36A

6.2A

BOTTOM 4.3A

-75 -50 -25 025 50 75 100 125 150 175

TJ , Temperature ( °C )

1.0

1.5

2.0

2.5

3.0

VGS(th) Gate threshold Voltage (V)

ID = 250µA

IRLR/U2905ZPbF

www.irf.com 7

Fig 15. Typical Avalanche Current Vs.Pulsewidth

Fig 16. Maximum Avalanche Energy

Vs. Temperature

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of Tjmax. This is validated for

every part type.

2. Safe operation in Avalanche is allowed as long asTjmax is

not exceeded.

3. Equation below based on circuit and waveforms shown in

Figures 12a, 12b.

4. PD (ave) = Average power dissipation per single

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. Iav = Allowable avalanche current.

7. ∆T = Allowable rise in junction temperature, not to exceed

Tjmax (assumed as 25°C in Figure 15, 16).

tav = Average time in avalanche.

D = Duty cycle in avalanche = tav ·f

ZthJC(D, tav) = Transient thermal resistance, see figure 11)

PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC

Iav = 2DT/ [1.3·BV·Zth]

EAS (AR) = PD (ave)·tav

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02

tav (sec)

0.1

100

1000

Avalanche Current (A)

0.05

Duty Cycle = Single Pulse

0.10

Allowed avalanche Current vs

avalanche pulsewidth, tav

assuming ∆Tj = 25°C due to

avalanche losses. Note: In no

case should Tj be allowed to

exceed Tjmax

0.01

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

EAR , Avalanche Energy (mJ)

TOP Single Pulse

BOTTOM 1% Duty Cycle

ID = 36A

IRLR/U2905ZPbF

8www.irf.com

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

P.W. Period

di/dt

Diode Recovery

dv/dt

Ripple ≤5%

Body Diode Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D = P. W .

Period

* VGS = 5V for Logic Level Devices







RGVDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T



VDS

90%

10%

VGS

d(on)

d(off)

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

D.U.T.

10V

VDD

Fig 18a. Switching Time Test Circuit

Fig 18b. Switching Time Waveforms

IRLR/U2905ZPbF

www.irf.com 9

D-Pak (TO-252AA) Part Marking Information

D-Pak (TO-252AA) Package Outline

Dimensions are shown in millimeters (inches)

INT ERNATIONAL

AS SE MB LED ON WW 16, 2001

IN THE ASSEMBLY LINE "A"

Note: "P" in ass embly line position

EXAMPLE:

LOT CODE 1234

THIS IS AN IRF R120

WIT H AS S E MB L Y

indi cates "L ead-F ree"

PRODUCT (OPTIONAL)

P = DES IGNAT ES LEAD-FREE

A = AS S E MB L Y S I T E CODE

PART NUMBER

WE E K 1 6

DAT E CODE

YEAR 1 = 2001

RECTIFIER

INT ERNATIONAL

LOGO

LOT CODE

AS S E MB L Y

3412

IR F R120

116A

LINE A

RECTIFIE R

LOGO

IR F R120

AS S E MB L Y

LOT CODE

YEAR 1 = 2001

DAT E CODE

PART NUMBER

WE E K 16

"P" in assembly line position indicates

"L ead- F r ee" qual i fi cati on to the cons umer -l evel

P = DES IGNAT ES LEAD-FREE

PRODUCT QUALIFIED TO THE

CONS UMER LEVEL (OPT IONAL)

Notes:

1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

IRLR/U2905ZPbF

10 www.irf.com

I-Pak (TO-251AA) Package Outline

Dimensions are shown in millimeters (inches)

I-Pak (TO-251AA) Part Marking Information

LINE A

LOGO

INTERNATIONAL

RECTIFIER

PRODUCT (OPTIONAL)

P = DES IGNAT ES LEAD-FREE

A = ASSEMBLY SITE CODE

IRFU120

PART NUMBER

WE E K 1 9

DAT E CODE

YEAR 1 = 2001

RECTIFIER

INTERNATIONAL

LOGO

AS S E MB L Y

LOT CODE

IRFU120

DAT E CODE

PART NUMBER

LOT CODE

AS S E MB L Y

56 78

YEAR 1 = 2001

WE E K 1 9

119A

indi cates L ead-F ree"

AS S EMBLED ON WW 19, 2001

IN THE ASSEMBLY LINE "A"

Note: "P" in assembly line position

EXAMPLE:

WI T H AS S E MB L Y

THIS IS AN IRFU120

LOT CODE 5678

Notes:

1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

IRLR/U2905ZPbF

www.irf.com 11

Data and specifications subject to change without notice.

This product has been designed for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.10/2010

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

 Limited by TJmax, starting TJ = 25°C, L = 0.089mH

RG = 25Ω, IAS = 36A, VGS =10V. Part not

recommended for use above this value.

Pulse width ≤ 1.0ms; duty cycle ≤ 2%.

Notes:

 Coss eff. is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS .

 Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive

avalanche performance.

 This value determined from sample failure population. 100%

tested to this value in production.

 When mounted on 1" square PCB (FR-4 or G-10 Material) .

For recommended footprint and soldering techniques refer to

application note #AN-994

 Rθ is measured at TJ approximately 90°C

D-Pak (TO-252AA) Tape & Reel Information

Dimensions are shown in millimeters (inches)

16.3 ( .641 )

15.7 ( .619 )

8.1 ( .318 )

7.9 ( .312 )

12.1 ( .476 )

11.9 ( .469 ) FEED DIRECTION FEED DIRECTION

16.3 ( .641 )

15.7 ( .619 )

TRR TRL

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

NOTES :

1. OUTLINE CONFORMS TO EIA-481.

16 mm

13 INCH