©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
BD434/436/438
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BD434
: BD436
: BD438
- 22
- 32
- 45
V
V
V
VCES Collector-Emitter Voltage: BD434
: BD436
: BD438
- 22
- 32
- 45
V
V
V
VCEO Collector-Emitter Voltage: BD434
: BD436
: BD438
- 22
- 32
- 45
V
V
V
VEBO Emitter-Base Volt age - 5 V
IC Collector Current (DC) - 4 A
ICP *Collector Current (Pulse) - 7 A
IB Base Current - 1 A
PC Collector Dissipation (TC=25°C) 36 W
TJ Junction Tempe rature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
BD434/436/438
Medium Power Linear and Switching
Applications
• Complement to BD433, BD435 and BD437 respectively
1TO-126
1. Emitter 2.Collector 3.Base
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
BD434/436/438
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: BD434
: BD436
: BD438
IC = - 100mA, IB = 0 - 22
- 32
- 45
V
V
V
ICBO Collector Cut-off Current : BD434
: BD436
: BD438
VCB = - 22V , IE = 0
VCB = - 32V , IE = 0
VCB = - 45V , IE = 0 - 100
- 100
- 100
µA
µA
µA
ICEO Collector Cut-off Current : BD434
: BD436
: BD438
VCE = - 22V , VBE = 0
VCE = - 32V , VBE = 0
VCE = - 45V , VBE = 0
- 100
- 100
- 100
µA
µA
µA
IEBO Emitt e r C u t-o ff C u rr en t VEB = - 5V, IC = 0 - 1 mA
hFE * DC Current Gain : BD434/436
: BD438
: ALL DEVICE
: BD434/436
: BD438
VCE = - 5V, IC = - 10mA
VCE = - 1V, IC = - 500m A
VCE = - 1V, IC = - 2A
40
30
85
50
40
140
140
140
VCE(sat) * Collector-Emitter Saturation Voltage
: BD434
: BD436
: BD438
IC = - 2A, IB = - 0.2A - 0.2
- 0.2
- 0.2
- 0.5
- 0.5
- 0.6
V
V
V
VBE(on) * Base-Emitter ON Voltage
: BD434
: BD436
: BD438
VCE = - 1V, IC = - 2A - 1.1
- 1.1
- 1.2
V
V
V
fTCurrent Gain Bandwidth Product VCE = - 1V, IC = - 250m A 3 MHz
©2001 Fairchild Semiconductor Corporation
BD434/436/438
Rev. A1, June 2001
Typical Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter On Voltage Figure 4. Collector-Base Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
-0.01 -0.1 -1 -10 -100
1
10
100
1000
VCE = -1V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.1 -1 -10
-0.01
-0.1
-1
IC = 10 IB
VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-0.0 -0.3 -0.5 -0.8 -1.0 -1.3 -1.5 -1.8 -2.0
-0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
VCE = -1V
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
-0.1 -1 -10 -100 -1000
-1
-10
-100
-1000
CCBO(pF), COLLECTOR BASE CAPACITANCE
VCB[V], COLLECTOR BASE VOLTAGE
-1 -10 -100
-0.1
-1
-10
10µs
100µs
1ms
10ms
BD434
IC MAX. (Pulsed)
BD438
BD436
DC
IC Max. (Continuous)
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
6
12
18
24
30
36
42
48
PC[W], POWER DIS SIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
BD434/436/438
Dimensions in Millimeters
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2001 Fairchild Semiconductor Corporation Rev. H2
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result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
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device or system, or to affect its safety or effectiveness.
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Definition of Terms
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Advance Information Formative or In
Design This datasheet contains the design specifications for
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