MPS-002701-84 3 to 2700 MHz General Purpose Amplifier Features: High IP3 +35 dBm Typical High P1dB +20 dBm Typical +5 Volt Bias 30% High Power Added Efficiency The MPS-002701-84 is an internally matched GaAs FET amplifier in a surface mount ceramic package. It is ideal for digital communications applications where excellent gain linearity and high efficiency at a 5 Volt bias is required. The device may be directly soldered to a 50 ohm microstrip circuit without additional matching elements. Specifications Electrical at 25C, Vdd = 5.0 V, Zo = 50 ohms SYMBOL PARAMETERS Min Freq. Frequency Range 3 SSG Small Signal Gain 10.5 11.5 dB P1 dB Pout at 1 dB Comp Point +19.0 +20.0 dBm IP3 Third-Order Intercept Point +35.0 dBm VSWR VSWR, Input VSWR, Output 2.0:1 1.8:1 -- GOF Gain Var. over Frequency 0.5 GOT Gain Var. over Temperature -.015 NF Noise Figure 50 - 100 MHz 100 - 500 MHz 500 - 2700 MHz 8 6 5 Idd DC Current 120 P1dB @ 25C Typical Max Unit 2700 MHz 0.8 dB dB/C dB 160 mA Absolute Maximum Ratings P1dB (dBm) 25 24 23 22 Maximum Bias Voltage Maximum Continuous RF Input Power Maximum Peak Input Power Maximum Case Operating Temperature Maximum Storage Temperature 21 20 19 18 17 16 15 0 500 1000 1500 2000 2500 3000 Freq. (MHz) MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-651-2208 EMAIL info@mwtinc.com Data contained herein is subject to change without notice. All rights reserved (c) 2004 6.0 V 200 mW 300 mW +85 C - 65 C to + 150 C MPS-002701-84 3 to 2700 MHz General Purpose Amplifier Gain @ 25C Return Losses @ 25 C 15 0 14 S11 Ret. Loss (dB) Gain (dB) S22 -5 13 12 11 10 9 -10 -15 8 0 500 1000 1500 2000 2500 3000 -20 0 Freq. (MHz) 500 1000 1500 2000 Freq. (MHz) Outline Diagram Application Circuit (50MHz TO 2700MHz) MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-651-2208 EMAIL info@mwtinc.com Data contained herein is subject to change without notice. All rights reserved (c) 2004 2500 3000