High Power Bipolar Transistor Pin Configuration: 1. Base 2. Collector 3. Emitter 4. Collector Feature: * * NPN plastic power transistors General purpose amplifier and switching applications Absolute Maximum Ratings: Characteristic Symbol BD243C Unit 100 V 6 A 65 W Tj 150 C VCE (Sat) 1.5 Collector-Base Voltage (Open Emitter) VCBO Collector Emitter Voltage (Open Base) VCEO Collector Current Total Power Dissipation upto TC = 25C Junction Temperature Collector Current Saturation Voltage IC = 6A, IB = 1A DC Current Gain IC = 0.3A; VCE = 4V IC Ptot hFE Max. V Min. 30 Ratings (at Ta = 25C unless otherwise specified) Limiting Values Collector-Base Voltage (Open Emitter) VCBO Collector Emitter Voltage (Open Base) VCEO Emitter-Base Voltage (Open Collector) VEBO Collector Current Collector Current (Peak) Base Current IC 100 5 6 Max. 10 IB 2 Ptot 65 Junction Temperature Tj 150 Storage Temperature Tstg -65 to +150 Total Power Dissipation upto TC = 25C V A W C www.element14.com www.farnell.com www.newark.com Page <1> 13/12/12 V1.0 High Power Bipolar Transistor Absolute Maximum Ratings: Characteristic Symbol BD243C Unit 1.92 C/W 0.7 0.4 mA Thermal Resistance From Junction to Case Rth (j-c) - Characteristics Ta = 25C unless otherwise specified Collector Cut off Current IB = 0; VCE = 60V VBE = 0; VCE = VCEO ICEO ICES Emitter Cut off Current IC = 0; VEB = 5V IEBO Breakdown Voltages IC = 30mA; IB = 0 IC = 1mA; IE = 0 IE = 1mA; IC = 0 VCEO (Sus)* VCBO VEBO Max. 1 Min. 100 100 5 Saturation Voltage IC = 6A; IB = 1A VCE (sat)* Base Emitter On Voltage IC = 6A; VCE = 4V VBE (on)* 2 hFE* 30 15 DC Current Gain IC = 0.3A; VCE = 4V IC = 3A; VCE = 4V Small Signal Current Gain IC = 0.5A; VCE = 10V; f = 1kHz hfe Transition Frequency IC = 0.5A; VCE = 10V; f = 1MHz fT (1) 1.5 V Max. Min. - 20 3 MHz * Pulse Test: Pulse Width 300s; Duty Cycle 2%. (1) fT = |hfe| * ftest www.element14.com www.farnell.com www.newark.com Page <2> 13/12/12 V1.0 High Power Bipolar Transistor Pin Configuration: 1. Base 2. Collector 3. Emitter 4. Collector Dimensions Min. Max. A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D - 0.9 E 1.15 1.4 F 3.75 3.88 G 2.29 2.79 H 2.54 3.43 J - 0.56 K 12.7 14.73 L 2.8 4.07 M 2.03 2.92 N - 31.24 O 7 Dimensions : Millimetres Part Number Table Description Part Number Transistor, NPN, TO-220 BD243C Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2012. www.element14.com www.farnell.com www.newark.com Page <3> 13/12/12 V1.0