2SA1015
PNP Silicon
Plastic-Encapsulate
Transistor
Features
• Capable of 0.4Watts of Power Dissipation.
• Collector-current 0.15A
• Collector-base Voltage 50V
• Operating and storage junction temperature range: -55OC to +150OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=0.1mAdc, IB=0) 50 --- Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0) 50 --- Vdc
ICBO Collector Cutoff Current
(VCB=50Vdc, IE=0) --- 0.1 uAdc
IEBO Emitter Cutoff Current
(VEB=5.0Vdc, IC=0) --- 0.1 uAdc
ON CHARACTERISTICS
hFE DC Current Gain
(IC=2.0mAdc, VCE=6.0Vdc) 70 400 ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=100mAdc, IB=10mAdc) --- 0.3 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=100mAdc, IB=10mAdc) --- 1.1 Vdc
VBE Base-Emitter Voltage
(IE=310mAdc) --- 1.45 Vdc
SMALL-SIGNAL CHARACTERISTICS
fT Transistor Frequency
(IC=1.0mAdc, VCE=10Vdc, f=30MHz) 80 MHz
CLASSIFICATION OF HFE (1)
Rank O Y GR
Range 70-140 120-240 200-400
TO-92
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .175 .185 4.45 4.70
B .175 .185 4.46 4.70
C .500 --- 12.7 ---
D .016 .020 0.41 0.63
E .135 .145 3.43 3.68
G .095 .105 2.42 2.67
A
E
B
C
D
G
Pin Configuration
Bottom View E C B
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Revision: 2 2003/06/30
omponents
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