PSS9013H - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation 2003 May 15

DISCRETE SEMICONDUCTORS

PSS9013 series

20 V NPN general purpose

transistors

ook, halfpage

M3D186

2003 May 15 2

Philips Semiconductors Product speciﬁcation

20 V NPN general purpose transistors PSS9013 series

FEATURES

•High power dissipation: 710 mW

•Low collector capacitance

•Low collector-emitter saturation voltage

•High current capability.

APPLICATIONS

•General purpose switching and amplification.

DESCRIPTION

NPN general purpose transistor in a SOT54 (TO-92)

leaded plastic package. PNP complement:

PSS9012 series.

MARKING

TYPE NUMBER MARKING CODE

PSS9013G S9013G

PSS9013H S9013H

PINNING

PIN DESCRIPTION

1 collector

2 base

3 emitter

handbook, halfpage

MAM279

Fig.1 Simplified outline (SOT54; TO-92) and

symbol.

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

VCEO collector-emitter voltage 20 V

ICcollector current (DC) 500 mA

ICM peak collector current 1 A

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

Note

1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated and standard footprint.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −40 V

VCEO collector-emitter voltage open base −20 V

VEBO emitter-base voltage open collector −5V

Ccollector current (DC) −500 mA

ICM peak collector current −1A

BM peak base current −100 mA

Ptot total power dissipation Tamb ≤25 °C; note 1 −710 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

2003 May 15 3

Philips Semiconductors Product speciﬁcation

20 V NPN general purpose transistors PSS9013 series

THERMAL CHARACTERISTICS

Note

1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated and standard footprint.

CHARACTERISTICS

Tamb =25°C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient in free air; note 1 175 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-off current VCB = 35 V; IE=0 −−100 nA

VCB = 35 V; IE= 0; Tj= 150 °C−−50 µA

IEBO emitter-base cut-off current VEB =5V; I

C=0 −−100 nA

hFE DC current gain VCE =1V; I

C= 500 mA 40 −−

FE DC current gain VCE =1V; I

C=50mA

PSS9013G 112 −166

PSS9013H 144 −202

VCEsat collector-emitter saturation

voltage IC= 100 mA; IB=10mA −60 250 mV

IC= 500 mA; IB=50mA −250 600 mV

VBEsat base-emitter saturation

voltage IC= 500 mA; IB=50mA −1 1.2 V

VBEon base-emitter turn on voltage VCE =1V; I

C= 100mA −760 1000 mV

Cccollector capacitance VCB =6V; I

E=I

e= 0; f = 1 MHz −5−pF

2003 May 15 4

Philips Semiconductors Product speciﬁcation

20 V NPN general purpose transistors PSS9013 series

handbook, halfpage

102

103

MLE086

11010

2103

IC (mA)

(MHz)

Fig.2 Transition frequency as a function of

collector current; typical values.

VCE =6V.

handbook, halfpage

(5)

(1)

(mA)

VCE (V)

0420

81216

MLE087

(6)

(7)

(4)

(3)

(2)

Fig.3 Collector current as a function of

collector-emitter voltage; typical values.

(1) IB= 140 µA.

(2) IB= 120 µA.

(3) IB= 100 µA.

(4) IB=80µA.

(5) IB=60µA.

(6) IB=40µA.

(7) IB=20µA.

Tamb =25°C.

handbook, halfpage

200

300

100

MLE088

10−1110 I

(mA)

hFE

102103

(1)

(2)

(3)

Fig.4 DC current gain as a function of collector

current; typical values.

VCE =1V.

(1) Tamb = 100 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

200

300

100

MLE089

10−1110 I

(mA)

hFE

102103

(1)

(2)

(3)

Fig.5 DC current gain as a function of collector

current; typical values.

VCE =2V.

(1) Tamb = 100 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

2003 May 15 5

Philips Semiconductors Product speciﬁcation

20 V NPN general purpose transistors PSS9013 series

handbook, halfpage

103

102

MLE090

10−1110 I

(mA)

VCEsat

(mV)

102103

(1)

(3)

(2)

Fig.6 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 10.

(1) Tamb = 100 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

103

102

MLE091

10−1110 I

(mA)

VCEsat

(mV)

102103

(2)

(3)

(1)

Fig.7 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 20.

(1) Tamb = 100 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

103

102

10−1

MLE092

10−1110 I

(mA)

RCEsat

(Ω)

102103

(1)

(3)

(2)

Fig.8 Collector-emitter equivalent on-resistance

as a function of collector current; typical

values.

IC/IB= 10.

(1) Tamb = 100 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

103

102

10−1

MLE093

10−1110 I

(mA)

RCEsat

(Ω)

102103

(1)

(3)

(2)

Fig.9 Collector-emitter equivalent on-resistance

as a function of collector current; typical

values.

IC/IB= 20.

(1) Tamb = 100 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

2003 May 15 6

Philips Semiconductors Product speciﬁcation

20 V NPN general purpose transistors PSS9013 series

handbook, halfpage

0.2

1.4

0.6

MLE094

10−1110 I

(mA)

VBEsat

(V)

102103

(3)

(1)

(2)

Fig.10 Base-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 10.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 100 °C.

handbook, halfpage

0.2

1.4

0.6

MLE095

10−1110 I

(mA)

VBEsat

(V)

102103

(1)

(3)

(2)

Fig.11 Base-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 20.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 100 °C.

handbook, halfpage

0.8

1.2

0.4

MLE096

10−1110 I

(mA)

VBE

(V)

102103

(1)

(2)

(3)

Fig.12 Base-emitter voltage as a function of

collector current; typical values.

VCE =1V.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 100 °C.

handbook, halfpage

0.8

1.2

0.4

MLE097

10−1110 I

(mA)

VBE

(V)

102103

(1)

(2)

(3)

Fig.13 Base-emitter voltage as a function of

collector current; typical values.

VCE =2V.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 100 °C.

2003 May 15 7

Philips Semiconductors Product speciﬁcation

20 V NPN general purpose transistors PSS9013 series

PACKAGE OUTLINE

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 5.2

5.0

0.48

0.40

0.45

0.40

4.8

4.4

1.7

1.4

4.2

3.6

14.5

12.7

2.54

1.27

L1(1)

2.5

0.66

0.56

DIMENSIONS (mm are the original dimensions)

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

SOT54 TO-92 SC-43 97-02-28

A L

0 2.5 5 mm

scale

b1L1

Plastic single-ended leaded (through hole) package; 3 leads SOT54

e1e

2003 May 15 8

Philips Semiconductors Product speciﬁcation

20 V NPN general purpose transistors PSS9013 series

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

LEVEL DATA SHEET

STATUS(1) PRODUCT

STATUS(2)(3) DEFINITION

I Objective data Development This data sheet contains data from the objective speciﬁcation for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Relevant changes will

be communicated via a Customer Product/Process Change Notiﬁcation

(CPCN).

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratanyotherconditionsabovethosegiveninthe

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuch applicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusingorselling theseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes in the products -

including circuits, standard cells, and/or software -

described or contained herein in order to improve design

and/or performance. When the product is in full production

(status ‘Production’), relevant changes will be

communicated via a Customer Product/Process Change

Notification (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these

products, conveys no licence or title under any patent,

makes no representations or warranties that these

products are free from patent, copyright, or mask work

right infringement, unless otherwise specified.

2003 May 15 9

Philips Semiconductors Product speciﬁcation

20 V NPN general purpose transistors PSS9013 series

NOTES

2003 May 15 10

Philips Semiconductors Product speciﬁcation

20 V NPN general purpose transistors PSS9013 series

NOTES

2003 May 15 11

Philips Semiconductors Product speciﬁcation

20 V NPN general purpose transistors PSS9013 series

NOTES

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Printed in The Netherlands 613514/01/pp12 Date of release: 2003 May 15 Document order number: 9397 750 11163