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November 2013
SGH40N60UF — 600 V PT IGBT
©2009 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
SGH40N60UF Rev. C1
SGH40N60UF
600 V PT IGBT
General Description
Fairchild’s UF series IGBTs provide low conduction and
switching losses. UF series is designed for the applications
such as general inverter and PFC where high speed
switching is required feature.
Features
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 2.1 V @ IC = 20 A
• High Input Impedance
Absolute Maximum Ratings TC = 25C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Description Ratings Unit
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage 20 V
ICCollector Current @ TC = 25C40 A
Collector Current @ TC = 100C20 A
ICM (1) Pulsed Collector Current 160 A
PDMaximum Power Dissipation @ TC = 25C 160 W
Maximum Power Dissipation @ TC = 100C64 W
TJ Operating Junction Temperature -55 to +150 C
Tstg Storage Temperature Range -55 to +150 C
TLMaximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds 300 C
Symbol Parameter Typ. Max. Unit
RJC Thermal Resistance, Junction-to-Case -- 0.77 C/W
RJA Thermal Resistance, Junction-to-Ambient -- 40 C/W
Application
• General Inverter, PFC
GCETO-3P
G
C
E
G
C
E
SGH40N60UF — 600 V PT IGBT
©2009 Fairchild Semiconductor Corporation 2www.fairchildsemi.com
SGH40N60UF Rev. C1
Electrical Characteristics of the IGBT TC = 25C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characterist ic s
BVCES Collector-Emitter Breakdown Voltage VGE = 0 V, IC = 250 uA 600 -- -- V
BVCES/
TJ
Temperature Coefficient of Breakdown
Voltage VGE = 0 V, IC = 1 mA -- 0.6 -- V/C
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V -- -- 250 uA
IGES G-E Leakage Current VGE = VGES, VCE = 0 V -- -- ± 100 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 20 mA, VCE = VGE 3.5 4.5 6.5 V
VCE(sat) Collector to Emitter
Saturation Voltage IC = 20 A, VGE = 15 V -- 2.1 2.6 V
IC = 40 A, VGE = 15 V -- 2.6 -- V
Dynamic Characteristics
Cies Input Capacitance VCE = 30 V, VGE = 0 V,
f = 1 MHz
-- 1430 -- pF
Coes Output Capacitance -- 170 -- pF
Cres Reverse Transfer Capacitance -- 50 -- pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 300 V, IC = 20 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 25C
-- 15 -- ns
trRise Time -- 30 -- ns
td(off) Turn-Off Delay Time -- 65 130 ns
tfFall Time -- 50 150 ns
Eon Turn-On Switching Loss -- 160 -- uJ
Eoff Turn-Off Switching Loss -- 200 -- uJ
Ets Total Switching Loss -- 360 600 uJ
td(on) Turn-On Delay Time
VCC = 300 V, IC = 20 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 125C
-- 30 -- ns
trRise Time -- 37 -- ns
td(off) Turn-Off Delay Time -- 110 200 ns
tfFall Time -- 144 250 ns
Eon Turn-On Switching Loss -- 310 -- uJ
Eoff Turn-Off Switching Loss -- 430 -- uJ
Ets Total Switching Loss -- 740 1200 uJ
QgTotal Gate Charge VCE = 300 V, IC = 20 A,
VGE = 15 V
-- 97 150 nC
Qge Gate-Emitter Charge -- 20 30 nC
Qgc Gate-Collector Charge -- 25 40 nC
LeInternal Emitter Inductance Measured 5mm from PKG -- 14 -- nH
SGH40N60UF — 600 V PT IGBT
©2009 Fairchild Semiconductor Corporation 3www.fairchildsemi.com
SGH40N60UF Rev. C1
048121620
0
4
8
12
16
20 Common Emitt er
TC = 125℃
40A
20A
IC = 10A
Collector - Em itt er Vo ltag e, V CE [V]
Gate - Emitter Voltage, VGE [V]
048121620
0
4
8
12
16
20 Comm on Em itte r
TC = 25℃
40A
20A
IC = 10A
Collector - Em itte r Voltag e, V CE [V]
Gate - Emitter Voltage, VGE [V]
0 30 60 90 120 150
0
1
2
3
4
40A
20A
IC = 10A
Common E m itt er
VGE = 15V
Collector - Em it ter Vol tag e, V CE [V]
Case Temperature, TC []℃
0.5 1 10
0
10
20
30
40
50
60
70
80 Common Emitter
VGE = 1 5V
TC = 25 ℃
TC = 125 ℃
Collector Current, I C [A]
Collector - Emitter Voltage, VCE [V]
02468
0
40
80
120
160 20V
12V
15V
VGE = 10V
Comm on Em itter
TC = 25℃
Collector Cu r ren t, I C [A]
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage
Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. VGE Fig 6. Saturation Voltage vs. VGE
0
5
10
15
20
25
30
0.1 1 10 100 1000
Duty cycle : 50%
TC = 100℃
Power Dissipation = 64W
VCC = 300V
Load Current : peak of square wave
Frequency [KHz]
Load Current [A]
SGH40N60UF — 600 V PT IGBT
©2009 Fairchild Semiconductor Corporation 4www.fairchildsemi.com
SGH40N60UF Rev. C1
110100200
50
100
1000
2000
Eon
Eoff
Eon
Eoff
Common Em it ter
VCC = 300V, VGE = ± 15V
IC = 20A
TC = 25 ℃
TC = 125 ℃
Switch in g Loss [u J]
Gate Resistance, RG []
1 10 100 200
20
100
1000
Toff
Tf
Tf
Common E m itt er
VCC = 300V, VGE = ± 15V
IC = 20A
TC = 25 ℃
TC = 125 ℃
Switch ing T im e [n s]
Gate Resistance, RG []
1 10 100 200
10
100
300 Common Em it ter
VCC = 300V, VGE = ± 15V
IC = 20A
TC = 25 ℃
TC = 125 ℃
Ton
Tr
Switching Time [ns]
Gate Resist an ce, RG []
Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance Fig 10. Switching Loss vs. Gate Re sistance
Fig 11. Turn-On Characteristics vs.
Collector Current Fig 12. Turn-Off Characteristics vs.
Collector Current
10 15 20 25 30 35 40
20
100
1000
Toff
Tf
Toff
Tf
Common Emitt er
VCC = 300V, VGE = ± 15V
RG = 10
TC = 25 ℃
TC = 125 ℃
Switch in g T im e [n S]
Collector Current, IC [A]
11030
0
500
1000
1500
2000
2500
Cres
Coes
Cies
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
Capacitance [pF]
Collector - Emitter Voltage, VCE [V]
10 15 20 25 30 35 40
10
100
200
Ton
Tr
Common Em itter
VCC = 300V, VGE = ± 15V
RG = 10
TC = 25 ℃
TC = 125 ℃
Switching Time [ns]
Collector Current, IC [A]
SGH40N60UF — 600 V PT IGBT
©2009 Fairchild Semiconductor Corporation 5www.fairchildsemi.com
SGH40N60UF Rev. C1
10-5 10-4 10-3 10-2 10-1 100101
1E-3
0.01
0.1
1
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
Therm al Resp on se, Zth jc [ /W]℃
Rectangular Pulse Du ra ti on [ sec]
1 10 100 1000
0.1
1
10
100
500
Safe Operating Area
VGE=20V, TC=100oC
Collector Current, I C [A]
Collector-Emitter Voltage, VCE [V]
Fig 14. Gate Charge Characteristics
Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics
Fig 13. Switching Loss vs. Collector Current
Pdm
t1
t2
Duty fa c to r D = t1 / t2
Peak Tj = Pdm
Zthjc + T
C
Fig 17. Transient Thermal Impedance of IGBT
10 15 20 25 30 35 40
10
100
1000
3000
Eoff
Eon
Eon
Eoff
Common Em itt er
VCC = 300V, VGE = ± 15V
RG = 10
TC = 25 ℃
TC = 125 ℃
Switch in g Loss [uJ]
Collector Current, IC [A]
0.3 1 10 100 1000
0.1
1
10
100
500
Single Nonrepetitive
Pulse TC = 25℃
Curves m us t be de rated
linearly with increase
in temperat ure
50us
100us
1㎳
DC Operation
IC MAX. (Continuous)
IC MAX. (Pulsed)
Collector Current, I C [A]
Collector-Em itter Voltage, VCE [V]
0 30 60 90 120
0
3
6
9
12
15
300 V
200 V
VCC = 100 V
Common Em itt er
RL = 15
TC = 25℃
Gate - Emitter Voltage, V GE [ V ]
Gate Ch arge, Qg [ nC ]
SGH40N60UF — 600 V PT IGBT
©2009 Fairchild Semiconductor Corporation 6www.fairchildsemi.com
SGH40N60UF Rev. C1
Mechanical Dimensions
Figure 18. TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65
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SGH40N60UF — 600 V PT IGBT
©2009 Fairchild Semiconductor Corporation 7www.fairchildsemi.com
SGH40N60UF Rev. C1
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