MLX92213
MicroPower & Low-Voltage
Hall Effect Latch with Enable
Page 1 of 10
REVISION 004 - JAN 17, 2018
390109221302
Features and Benefits
Operating Voltage from 1.6 to 3.6V
Latching Output Behaviour
Micro power Consumption 48uA@3V ;
36uA@1.8V
Advanced Power Manageability through
dedicated “Enable” pin
Ultra High Sensitivity Hall Sensor
Push-Pull Output
Miniature & Ultra-Thin QFN package
(2mm x 1.5mm ; 0.4mm thickness)
“Green” and “Pb-Free” Compliant Package
Applications
Battery-operated / Handheld Appliances
Rotary or Linear Contact-Less Encoders
Scroll/Jog Wheel, Trackball (Mobile Phones,
Portable Media Players, Notebooks,
Computer Mice, Camcorders, Cameras,…)
Home/Industrial Metering Equipment (Wafer
Flow Meter)
Ordering information
Part No.
Temperature Code
Package Code
Comment
MLX92213ELD-AAA-000-RE
E (-40°C to 85°C)
LD (UTQFN-6L)
BOP/BRP= ± 2mT
Legend:
Temperature Code: E for Temperature Range -40°C to 85°C
Package Code: LD for UTQFN
Packing Form: RE for Reel
Ordering example: MLX92213ELD-AAA-000-RE
1. Functional Diagram
2. General Description
The MLX92213 Micropower Low-Voltage Latch Hall effect sensor IC is fabricated in mixed signal CMOS
technology. It incorporates advanced Correlated Double Sampling (CDS) techniques to provide accurate and
stable magnetic switching points. In order to save power, the internal Timing Logic alternates Awake and Sleep
modes, thus significantly reducing the power consumption. The magnetic flux density is periodically evaluated
against predefined thresholds. If the flux density is above/below the BOP/BRP thresholds, then the Output
changes its state accordingly. During the Sleep mode the Output is latched in its previous state. The design has
been optimized for applications requiring extended operating lifetime in battery -powered systems. The EN pin
adds flexibility by enabling external control of the Micropower Period and Duty Cycle. The Push-Pull Output of
the MLX92213 will be latched in Low state in the presence of a sufficiently strong South magnetic field (B > B OP)
facing the marked side of the package. The Output will be latched in High state in the presence of a sufficiently
strong North magnetic field (B < BRP).
MLX92213
MicroPower & Low-Voltage
Hall Effect Latch with Enable
Page 2 of 10
REVISION 004 - JAN 17, 2018
390109221302
Contents
1. Functional Diagram ................................................................................................................................ 1
2. General Description ................................................................................................................................ 1
3. Glossary of Terms ................................................................................................................................... 3
4. Absolute Maximum Ratings .................................................................................................................... 3
5. Pinout ..................................................................................................................................................... 3
6. Output Behavior vs. Magnetic Pole ........................................................................................................ 3
7. General Electrical Specifications ............................................................................................................. 4
8. Magnetic Specifications .......................................................................................................................... 5
9. Application Section ................................................................................................................................. 5
9.1. Application Schematics ....................................................................................................................... 5
9.2. Recommendation / Comments .......................................................................................................... 5
10. Principle of Operation .......................................................................................................................... 6
11. Performance Graphs ............................................................................................................................ 7
11.1. Magnetic Threshold vs. Temperature ............................................................................................. 7
11.2. Magnetic Threshold vs. Supply Voltage ........................................................................................... 7
11.3. Average Supply Current vs. Temperature ....................................................................................... 7
11.4. Average Supply Current vs. Supply Voltage .................................................................................... 7
11.5. Supply Current vs. Temperature ...................................................................................................... 7
11.6. Supply Current vs. Supply Voltage ................................................................................................... 7
12. Standard information regarding manufacturability of Melexis products with different soldering
processes ............................................................................................................................................... 8
13. ESD Precautions ................................................................................................................................... 8
14. LD Package (UTQFN-6L) ........................................................................................................................ 9
15. Contact ............................................................................................................................................... 10
16. Disclaimer ........................................................................................................................................... 10
MLX92213
MicroPower & Low-Voltage
Hall Effect Latch with Enable
Page 3 of 10
REVISION 004 - JAN 17, 2018
390109221302
3. Glossary of Terms
Gauss, milliTesla (mT), Units of magnetic flux density:
10 Gauss = 1mT
4. Absolute Maximum Ratings
Parameter
Symbol
Units
Supply Voltage
VDD
V
Supply Current
IDD
mA
EN Input Voltage
VIN
V
EN Input Current
IIN
mA
Output Voltage
VOUT
V
Output Current
IOUT
mA
Operating Temperature Range
TA
°C
Storage Temperature Range
TS
°C
Table 1: Absolute maximum ratings
Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum-rated conditions for
extended periods may affect device reliability.
5. Pinout
Table 2: Pin definitions and descriptions
6. Output Behavior vs. Magnetic Pole
DC Operating Parameters TA = -40oC to 85oC, VDD = 1.6V to 3.6V
Parameter
Test
Conditions
OUT
South pole
B > BOP
Low
North pole
B < BRP
High
Table 3: Output behavior versus magnetic pole (
3
)
1
Exposed Pad on LD package is connected to Ground.
2
EN has to be connected to VDD when external Micropower control is not used.
3
The magnetic pole is applied facing the package top
Pin Name
Function
Pin №
VDD
Power Supply
3
GND
Ground
4, E-pad (1)
OUT
Push-Pull Output
1
EN
Enable(2)
6
NC
Not Connected
2, 5
MLX92213
MicroPower & Low-Voltage
Hall Effect Latch with Enable
Page 4 of 10
REVISION 004 - JAN 17, 2018
390109221302
7. General Electrical Specifications
Operating Parameters: TA = -40 to 85oC, VDD = 1.6V to 3.6V, unless otherwise specified
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Supply Voltage
VDD
Operating
1.6
-
3.6
V
Average Supply Current
IDDav
EN = VDD, VDD=3V
-
48
86
µA
EN = VDD, VDD=1.8V
-
36
70
µA
Awake Supply Current
IDDaw
EN = VDD, IOUT = 0mA
-
-
4
mA
Sleep Supply Current
IDDsl
EN = VDD, IOUT = 0mA
-
-
4.5
µA
Standby Supply Current
IDDsb
EN = 0
-
-
1
µA
Output Characteristics
High Level Output Voltage
VOH
B < BRP, IOUT = -1mA
VDD-0.4
VDD-0.2
-
V
Low Level Output Voltage
VOL
B > BOP, IOUT = 1mA
-
0.2
0.4
V
Power-On Output State(1)
VPO
High
Enable Pin Characteristics
EN Input High Voltage
VIH
0.1*VDD+1
-
-
V
EN Input Low Voltage
VIL
-
-
0.1*VDD+0.1
V
EN Input Current
IIN
-1
-
1
µA
EN Input Delay
tID
-
-
5
µs
EN Pulse Width
TE1
5
-
-
µs
EN Period
TE2
TAW + 0.1
-
-
µs
Timing Characteristics
Enable Transition Time (2)
tET
Disabled -> Enabled
-
-
tID + TAW
µs
Disable Transition Time (3)
tDT
Enabled -> Disabled
-
-
tID + TAW
µs
Power-On Time(4)
tON
EN = VDD
-
31
80
µs
EN = VDD, TA=25oC, VDD=3V
-
31
52
µs
Awake Time
TAW
EN = VDD
-
-
60
µs
EN = VDD, TA=25oC, VDD=3V
-
27
40
µs
EN = VDD, TA=25oC, VDD=1.8V
-
30
45
µs
Period
TPER
EN = VDD
0.70
1.30
1.90
ms
Response Time(5)
tRES
EN = VDD
-
-
TPER
ms
Magnetic Signal Frequency
fB
EN = VDD
1 / [ 2 * TPER ]
Hz
Table 4: Electrical specification
1
Defined output state after Power-On Time is high until the first BOP threshold is reached (B>BOP)
2
Enable transition time defined from EN command to the update of the Output driver state (ref. to Diagrams, p.6)
3
Disable transition time defined from EN command to entering Standby (ref. to Diagrams, p. 6)
4
Power-On Time represents the time from reaching VDD = 1.6V to the update of the Output driver state
5
Response Time is the time from the magnetic field change to the according update of the Output driver state, guaranteed
by design
MLX92213
MicroPower & Low-Voltage
Hall Effect Latch with Enable
Page 5 of 10
REVISION 004 - JAN 17, 2018
390109221302
8. Magnetic Specifications
DC Operating Parameters: VDD = 1.6V to 3.6V
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Operating Point
BOP
TA = 25°C
0.5
2
4
mT
Release Point
BRP
-4
-2
-0.5
mT
Hysteresis
BHYST
1.5
4
7
mT
Operating Point
BOP
TA = -40 to 85oC
0.1
2
5
mT
Release Point
BRP
-5
-2
-0.1
mT
Hysteresis
BHYST
1.5
4
7
mT
Table 5: Magnetic specifications
9. Application Section
Application Schematics 9.1.
Recommendation / Comments 9.2.
A bypass capacitor C1 of 10nF is recommended to ensure supply voltage stability in application. It should be placed
between the VDD and GND pin, as close as possible to the MLX92213.
The MLX92213 provides a direct push-pull output, hence aiming to reduce external component count like output pull-up
resistor or capacitor. The use of the output capacitor C2 connected in parallel to the output is optional. If connected
between OUT and GND in such a push-pull configuration, the current sinked by the charge of the capacitor when the
output switches from “0” to “1” leads to an small increase of the average current consumption of the whole module (IC +
capacitor).
Using small capacitor value C2 (less than 50pF) would avoid having such small increase of the module a verage current
consumption.
For enhanced power management, the EN (Enable) signal can be driven by an external MCU. It basically allows controlling
the state IC and therefore its current consumption according the application requirements:
Standby mode for minimal current consumption (EN = “0”)
Default Micropower (EN = “1”)
Faster or slower sampling rate through EN signal
For more details on the different mode, please refer to the Principle of Operation section.
For application where standard power management is enough (default “Micropower” mode, Standby unused), the EN pin
should be tied to VDD
MLX92213
MicroPower & Low-Voltage
Hall Effect Latch with Enable
Page 6 of 10
REVISION 004 - JAN 17, 2018
390109221302
10. Principle of Operation
Note: The diagrams are not-to-scale, for exact values refer to General Electrical Specification
Note: The Output is assumed to have only a low capacitive load, which results in fast rise / fall times
MLX92213
MicroPower & Low-Voltage
Hall Effect Latch with Enable
Page 7 of 10
REVISION 004 - JAN 17, 2018
390109221302
11. Performance Graphs
Magnetic Threshold vs. Temperature 11.1.
Magnetic Threshold vs. Supply Voltage 11.2.
Average Supply Current vs. 11.3.
Temperature
Average Supply Current vs. Supply 11.4.
Voltage
Supply Current vs. Temperature 11.5. 11.6. Supply Current vs. Supply Voltage
MLX92213
MicroPower & Low-Voltage
Hall Effect Latch with Enable
Page 8 of 10
REVISION 004 - JAN 17, 2018
390109221302
12. Standard information regarding manufacturability of Melexis products
with different soldering processes
Our products are classified and qualified regarding soldering technology, solderability and moisture sensitivity level
according to following test methods:
Reflow Soldering SMD’s (Surface Mount Devices)
IPC/JEDEC J-STD-020
Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices
(classification reflow profiles according to table 5-2)
EIA/JEDEC JESD22-A113
Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing
(reflow profiles according to table 2)
Wave Soldering SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices)
EN60749-20
Resistance of plastic- encapsulated SMD’s to combined effect of moisture and soldering heat
EIA/JEDEC JESD22-B106 and EN60749-15
Resistance to soldering temperature for through-hole mounted devices
Iron Soldering THD’s (Through Hole Devices)
EN60749-15
Resistance to soldering temperature for through-hole mounted devices
Solderability SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices)
EIA/JEDEC JESD22-B102 and EN60749-21
Solderability
For all soldering technologies deviating from above mentioned standard conditions (regarding peak temperature,
temperature gradient, temperature profile etc) additional classification and qualification tests have to be agreed upon with
Melexis.
The application of Wave Soldering for SMD’s is allowed only after consulting Melexis regarding assurance of adhesive
strength between device and board.
Melexis is contributing to global environmental conservation by promoting lead free solutions. For more information on
qualifications of RoHS compliant products (RoHS = European directive on the Restriction Of the use of certain Hazardous
Substances) please visit the quality page on our website: http://www.melexis.com/quality.aspx
13. ESD Precautions
Electronic semiconductor products are sensitive to Electro Static Discharge (ESD).
Always observe Electro Static Discharge control procedures whenever handling semiconductor products.
MLX92213
MicroPower & Low-Voltage
Hall Effect Latch with Enable
Page 9 of 10
REVISION 004 - JAN 17, 2018
390109221302
14. LD Package (UTQFN-6L)
This table in mm
D x E
N
e
A
A1
A3
D2
E2
G
L
K
b
1.5 x 2
6
0.50
min
0.31
0.00
0.13
REF
0.95
0.55
1.20
0.22
0.20
0.18
max
0.40
0.05
1.20
0.90
1.30
0.43
–
0.30
Note:
1. General tolerance of D and E is ±0.1mm.
2. Bottom pin1 identification is may vary depends on the suppliers.
MLX92213
MicroPower & Low-Voltage
Hall Effect Latch with Enable
Page 10 of 10
REVISION 004 - JAN 17, 2018
390109221302
15. Contact
For the latest version of this document, go to our website at www.melexis.com.
For additional information, please contact our Direct Sales team and get help for your specific needs:
Europe, Africa
Telephone: +32 13 67 04 95
Email : sales_europe@melexis.com
Americas
Telephone: +1 603 223 2362
Email : sales_usa@melexis.com
Asia
Email : sales_asia@melexis.com
16. Disclaimer
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furnishing, performance or use of the technical data or use of the product(s) as described herein (“Product”) (ii) any and all liability, including without limitation, special,
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infringement and merchantability. No obligation or liability shall arise or flow out of Melexis’ rendering of technical or other services.
The Information is provided "as is” and Melexis reserves the right to change the Information at any time and without notice. Therefore, before placing orders and/or prior to
designing the Product into a system, users or any third party should obtain the latest version of the relevant information to verify that the information being relied upon is current.
Users or any third party must further determine the suitability of the Product for its application, including the level of reliability required and determine whether it is fit for a
particular purpose.
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The Product(s) are intended for use in normal commercial applications. Unless otherwise agreed upon in writing, the Product(s ) are not designed, authorized or warranted to be
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sustaining equipment are specifically not recommended by Melexis.
The Product(s) may not be used for the following applications subject to export control regulations: the development, production, processing, operation, maintenance, storage,
recognition or proliferation of 1) chemical, biological or nuclear weapons, or for the development, production, maintenance o r storage of missiles for such weapons: 2) civil
firearms, including spare parts or ammunition for such arms; 3) defense related products, or other material for military use or for law enforcement; 4) any applications that, alone
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