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SPICE Device Model Si2323DS
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions
Simulated
Data
Measured
Data Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = − 250µA 0.74 V
On-State Drain Currenta ID(on) VDS ≤ − 5V, VGS = − 4.5V 98 A
VGS = − 4.5V, ID = − 4.7A 0.031 0.031
VGS = − 2.5V, ID = − 4.1Α 0.043 0.041
Drain-Source On-State Resistancea r
DS(on)
VGS = − 1.8V, ID = − 2Α 0.059 0.054
Ω
Forward Transconductancea g
fs VDS = − 5V, ID = − 4.7A 15 16 S
Diode Forward Voltagea V
SD IS = − 1A, VGS = 0V - 0.78 - 0.70 V
Dynamicb
Total Gate Charge Qg 12.1 12.5
Gate-Source Charge Qgs 1.7 1.7
Gate-Drain Charge Qgd
VDS = − 10V, VGS = − 4.5V, ID = − 4.7A
3.3 3.3
nC
Turn-On Delay Time td(on) 24 25
Rise Time tr 22 43
Turn-Off Delay Time td(off) 60 71
Fall Time tf
VDD = − 10V, RL = 10Ω
ID ≅ − 1A, VGEN = − 4.5V, RG = 6Ω
13 48
ns
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com Document Number: 70111
2 27-Mar-03