. ,SAMSUNG SEMICONDUCTOR INC LYE D B escui4a o007300 3 i MMBTAG64 - PNP EPITAXIAL SILICON TRANSISTOR ee . T-29-29 DARLINGTON TRANSISTOR sores f ABSOLUTE MAXIMUM RATINGS (Ta, =25C) Characteristic Symbol Rating Unit Collector-Base Voltage Vceo 30 Vv Coltector-Emitter Voltage Vees 30 Vv Emitter-Base Voltage Vead 10 Vv Collector Current le 500 mA Collector Dissipation Pe 350 mw Storage Temperature Tstg 150 C * Refer to MMBTA63 for graphs 4 1, Base 2. Emitter 3. Collector ELECTRICAL CHARACTERISTICS (Ta=25C) Characteristic Symbol Test Condition Min Max Unit Collector-Emitter Breakdown Voltage | BVces {c= 100A, Ig=O my. 30 Vv Collector Cutoff Current logo Vep=30V, Ie=O 100... nA Emitter Cutoff Current leno. Vec=10V, ip=O0 100 nA *DC Current Gain Ore Vece=5V, Ilc=10MA 40,000 Vce=SV, le=100mA 20,000 Collector-Emitter Saturation Voltage Vce (sat) | k=100mA, Ip=0.1mA 1.5 Vv Base-Emitter On Voitage Vee (on) lc= 100MA. Vce=5V , 2 Vv Current Gain-Bandwidth Product fr lk=10mA, Ver = 50V 425 MHz {=100MHz. *Pulse Test: Pulse Width<30Ops, Duty Cycle<2% Marking yy . 2V oa ce SAMSUNG SEMICONDUCTOR 870