e xe Bae cee ALE D i 445S4S2 go0da7o B i INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER | TaR Data Sheet No. PD-9.378E T- 397-o0F HEXFET TRANSISTORS N-CHANNEL POWER MOSFETs TO-39 PACKAGE IRFF220 IRFF221 IRFF222 IRFF223 200 Voit, 0.8 Ohm HEXFET The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and great device ruggedness. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits. CASE STYLE AND DIMENSIONS =e 4.57 (0.180) MAX, 14,22 (0.56) MAX, Features: Fast Switching Low Drive Current Ease of Paralleling Excellent Temperature Stability Product Summary Part Number Vps RDS(on) Ip IRFF220 200V 0.82 3.5A IRFF221 150V 0.82 3.5A (RF F222 200V 1.22 3,0A IRF F223 150V 1.22 3.0A 9.14 (0.36) [DiA.>} 8 25 (0 325) 4.57 (0.180) 0.45 (0.018) 1 036 (0 014) TT oF 1803 (071) 1422 (058) AEF. 12.70 {0 50) 053 (0.021) 0.41 (0 016) 3 PLACES 45 PA 016 0009 0 72 (0.028) 0.88 (0 035) SOURCE 5:06 (0 20) Conforms to JEDEC Outline TO-205AF {TO-39) Dimensions in Millimaters and (Inches) G-347 -IRFF220 . MLE O , IRFF221, IRFF222, IRFF223 Devices * ots wee A T-39-09 INTERNATIONAL RECTIFIER | Absolute Maximum Ratings Parameter IRFF220 IRFF221 IRFF222 IRFF223 Units Vos Drain Source Voltage 200 150 200 150 v VpGR Drain Gate Voltage(Rgg = 20 kI@ 200 150 200 150 Vv lp @Te = 25C Continuous Drain Current 3.5 3.5 3.0 3.0 _ A lpm Pulsed Drain Current @ 14 14 12 12 A Vas Gate Source Voltage +20- ov Pp @Tc = 25C Max. Power Dissipation 20 (See Fig. 14) Ww Linear Derating Factor 0.16 (See Fig. 14) wk @ LM Inductive Current, Clamped (See Fig. 15 and 16) L = 100gH A 14 | 14 12 | 12 i Crs nce -8540 160 c Lead Temperature 300 (0.063 in, (1.6mm) from case for 10s) c Electrical Characteristics @Tc = 25C (Unless Otherwise Specified) Parameter Type Min, Typ. | Max. Units Test Conditions BYpss Orain Source Breakdown Voltage IRFF220 _ _ _ IRFF222 200 Vv Ves = OV IRFF221 - _ IREF223 150 - - ip = 250pA Vasith) Gate Threshold Voltage ALL 2.0 4.0 Vv Vos = Vas. Ip = 250pA lgsg _ Gate Source Leakage Forward ALL _ = 100 | nA Ves = 20V Iggg Gate Source Leakage Reverse ALL - - | -100 nA Vag = -20V Ipsg Zero Gate Voltage Drain Current ALL - = 250 BA Vos = Max. Rating. Vas = OV - | 1000 HA Vps = Max. Rating x 0.8, Vag = OV, Te = 125C ID(on) On-State Drain Current @ IRFF220 inre221 | 25 | ~ | 7 A Vos > 'ptont * Boston} max. Vag = 10V IRFF222] 35 _ _ A IRFF223 . - Rpsion) Static Drain Source On-State IRFE220 _ Resistance @ IRFF221 0.8 | 0.8 a Veg = 10V, Ip = 2.0A IRFF222 _ 0.8 1.2 Q IRFF223 . . Sts Forward Transcanductance @) ALL 1.9 |2.254) s{ui Vos > Ipion) x 8DSfon} max.: 'p = 2-0A Cisg Input Capacitance ALL - 450 | 600 pF Vag = OV; Vpg = 28V,f = 1.0 MHz Coss _ Output Capacitance ~ ALL _ 150 | 300 pF See Fig. 10 Criss Reverse Transfer Capacitance ALL _ 40 80 pF tdion) _ Turn-On Delay Time ALL - 20 40 ns Vop = 9.5 BVpsg: Ip = 2.0A, Zp = 502 ty Rise Time ALL _ 30 60 ns See Fig. 17 tdioff) _ Turn-Off Delay Time ALL = 50 100 ns (MOSFET switching times are essentially tf Fall Time ALL _ 30 60 ns independent of operating temperature.) Qg Total Gate Charge ALL _ "1 15 nc Vas = 10V, lp =7.0A,Vpg = 0.8V Max. Rating. {Gate-Source Pius Gate-Drain} See Fig. 18 for test circuit. (Gate charge is essentially independent of operating temperature.) Qgs Gate-Source Charge ALL - 5.0 - nG OQga Gate-Drain ('Milter''} Charge _ALL - 6.0 - nc Lo internal Drain inductance ALL - 5.0 - nH Measured from the Modified MOSFET drain lead, 5mm symbol showing the (0.2 in.) from header internal device to center of die. inductances. 0 ls Internal Source Inductance ALL = 15 - nH Measured from the source Jead, Smm {0.2 in.) from header to source bonding 3 pad. Thermal Resistance Rthuc _ Junction-to-Case ALL - | 625 |} Kw@ Rthya _ Junction-to-Ambient ALL - - 175 | KW | _Trical socket mount G-348 i 4855452 g009371 ag edINTERNATIONAL RECTIFIER IRFF220, IRFF221, IRFF222, IRFF223 Devices : ? LLE D Source-Drain Diode Ratings and Characteristics a W65S4S2 0009322 a Is Continuous Source Current - | IRFF220 _ Modified MOSFET symbol : . ' {Body Diode} iRFF221 | 3.6 A showing the integral ,-s : JT=39-09 ; at. ae . reverse P-N junction rectifier. . ~ . west cae, iReE222 TT A junetic ; - a as | IRFF223 | | 0 Isma Pulse Source Current - -~ - * {RFF220 _ _ . a {Body Diode) @ - - inFF221{ 7 .{ 7] 14 A ; . - JRFF222 . . inFF223 | ~ | 7 | 1 A | Vsp _ Diode Forward Voltage @ IRFF220 | _ 2.0 Ve Te = 25C, Ig = 3.5A, Veg = OV . IRFF221 . 3 IRFF222 = = = . IRFE223 - - 1.8 Vv To = 25C, Ig = 3.0A, Vgg = OV tre Reverse Recovery Time ALL - 350 = ns Ty = 150C, Ip = 3.5A, dip/dt = 100A/zs Orne Reverse Recovered Charge ALL _ 2.3 - pe Ty = 150C, Ip = 3.5A, dip/dt = 100A/ps ton Forward Turn-on Time ALL intrinsic turn-on time is negligible. Turn-on speed is substantially controlled bykLs + Lp. @ kw Ip, BRAIN CURRENT (AMPERES) - a 20 40 6 80 i Vos. ORAIN-TO SOURGE VOLTAGE (VOLTS) ~ Fig. 1 Typial Output Characteristics w ny Ip, GRAIN CURRENT (AMPERES} 0 2 4 6 8 Vos. DRAIN TO SOUACE VOLTAGE (VOLTS) @MTy = 25C to 150C. @Pulse Test: Pulse width < 300zs, Duty Cycle < 2%. @Repetitive Rating: Pulse width limited J Fig. 3 Typical Saturation Characteristics by max. junction temperature. See Transient Thermal Impedance Curve {Fig. 5}. t us PULSE FEST Vos > Ip(on} * Roston) max. r . lp, GRAIN CURRENT (AMPERES) 100 0 2 4 6 8 10 Ves. GATE-TO-SOURCE VOLTAGE {VOLTS} . ~ . Fig. 2 Typical-Transfer Characteristics TO-39 TION IN THIS BY Te = 2696 Ty = 150C MAX, Rihic = 6.25 KAW SINGLE PULSE a ip, DRAIN CURRENT (AMPERES) 1a yO 2 5 0 20 50 {00 200 500 Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 4 Maximum Safe Operating Area G-349IRFF220, IRFF221, IRFF222, IRFF223 Devices T-39-09 INTERNATIONAL RECTIFIER LLE D i 4ass4s2 g009373 3 i 05 or . 0.2 t 04 ly et2 0.05 1. outy Factor, o= 11 Zrhactt)/ yy je. NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT) 2 0.02 SINGLE PULSE 2, PER UNIT BASE = Ripac = 6.25 DEG. CW. an THERMAL IMPEDANCE) 3. Tim -Te* POM Zinsclth w5 2 5 ot 2 6 3 2 5 2 2 5 ot 2 5 1.0 2 5 1 ty, SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration 5 ee > an wo oy Ss ny an fs, TRANSCONDUCTANCE (SIEMENS) Inn, REVERSE DRAIN CURRENT (AMPERES) Vos >la(on) * Boston) max. 80 ps PULSE TEST pea y= 2506 1,0 a 2 4 6 8 10 0 1 2 3 4 Ip-ORAIN CURRENT (AMPERES) Vgg- SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 6 Typical Transconductance Vs, Drain Current Fig. 7 Typical Source-Drain Diode Forward Voltage 1.25 2.2 1.16 o w o z = 2 18 a wm ae ~ z S 1.05 og St oN 14 a &S F, < ot = at = 0.95 52 = a 0.85 BVpgs, DRAIN-TO-SOURCE 8REAKDOWN VOLTAGE Rost(on)- oe o 0.75 0.2 -40 0 40 80 120 160 40 0 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) Fig. 8 Breakdown Voltage Vs. Temperature Fig. 9 Normalized On-Resistance Vs. Temperature G-350ee te we eke. LLE D I uasSsusa gooq3a74 Ss i "INTERNATIONAL RECTIFIER IRFF220, IRFF221, IRFF222, |RFF223 Devices "000 20 - T-39~09 Gs=9 . . ' I * 800 Cisg = Cys + Cyd, Cys SHORTED g- . Vos=40V4 .o Crss = 6 Q : = es Shad = 4 _ Vog= tow y, Cone Cys Cod w IN] S oss Ods* a+ Cod = | Vos = l60v, IRFF220, 222 w 800 Cds # Cyd 2 - = i us 5 Ciss a 10 . = = a <= 400 2 a oa = a 5 / w <x 5 200 & / ip 7A - FOR TEST CIRCUIT c - SEE FIGURE 18 TSS 0 10 20 30 40 50 o 4 8 12 16 20 Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE {nC} Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 5 16 a = = 2 4 38 Vgg = lov a z 2 B us @ 10 a = <3 IRFF220, 221 2 Ee o = s : z 5 a Ln 2 IRFF222, 223 3 "| Le 20v 2 e L anna | Gs* z 2 056 a = s a 3 1 - 2 Ros{on) MEASURED WITH CURRENT PULSE OF 20 ps DURATION. INITIAL Ty = 25C. (HEATING y EFFECT OF 2.0 ns PULSE IS MINIMAL } " L L i L 0 0 5 10 18 20 B 60 18 100 125 150 Ip, ORAIN CURRENT (AMPERES) : Te, CASE TEMPERATURE (9C) -* Fig. 12 Typical On-Resistance Vs. Drain Current Fig. 13 Maximum Drain Current Vs. Case Temperature 20 . z 15 \ - <x = \ z \ Ss - = < N Z 10 \ 2 . a N = 2 5 \ - 0 20 40 60 a 100 6120Ss140 a a Tc, CASE TEMPERATURE (20) . Fig. 14 Power Vs. Temperature Derating Curve G-351 , ., te ee ea eee - eee + LAE D 5 4455452 0009375 ? | IRFF220, IRFF221, IRFF222, IRFF223 Devices INTERNATIGNAL RECTIFIER ~ Ec r 7-39-09 VARY ty TO OBTAIN REQUIRED PEAK t, Tt Vgg = OV ty - IL ,=0.56Vpsg c= 0.75 BVpss Fig. 15 Clamped Inductive Test Circuit Fig. 16 Clamped Inductive Waveforms o os (ISOLATED SUPPLY) CURRENT REGULATOR SAME TYPE ADJUST RE TO OBTAIN SPECIFIED Ip Ve PULSE GENERATOR r l 1.5 mA TO SCOPE 0 an O.010 Vos I HIGH FREQUENCY L SHUNT CURRENT CURRENT SAMPLING SAMPLING = . RESISTOR RESISTOR Fig. 17 Switching Time Test Circuit Fig. 18 Gate Charge Test Circuit 4012 i910 = 0.1 = UCL 2 @ 108 = t I 3 5 90% 2 5 i vol 00 = & w = 99% UCL & 2 108 2 $ a = 0.001 104 10? 1 0.0001 50 70 90 110 130 150 50 70 90 110 130 150 TEMPERATURE (C) TEMPERATURE (C) *Fig. 19 Typical Time to Accumulated 1% Gate Failure Fig. 20 Typical High Temperature Reverse Bias (HTRB) Failure Rate The data shown is carrect as of April 15, 1987. This information Is updated on a quarterly basis; for the latest reliability data, please contact your local IR field office. G-352 aye