BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25C Case Temperature TO-220 PACKAGE (TOP VIEW) 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3V, 3 A E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING BD645 BD647 Collector-base voltage (IE = 0) SYMBOL V CBO E T E L O S B O BD649 BD651 BD645 Collector-emitter voltage (IB = 0) BD647 BD649 BD651 Emitter-base voltage Continuous collector current V CEO VEBO IC VALUE 80 UNIT 100 120 V 140 60 80 100 120 V 5 V 12 A 8 A Peak collector current (see Note 1) ICM Continuous device dissipation at (or below) 25C case temperature (see Note 2) Ptot 62.5 W 1/2LIC2 50 mJ Continuous base current Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. IB Ptot 0.3 2 Tj -65 to +150 TL 260 Tstg -65 to +150 A W C C C This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 0.4 W/C. Derate linearly to 150C free air temperature at the rate of 16 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 , V BE(off) = 0, RS = 0.1 , VCC = 20 V. How to Order Device Package BDxxx TO-220 Carrier Order As Tube .BDxxx-S Insert xxx transistor type number 645, 647, 649, etc. MAY 1993 - REVISED JUNE 2013 *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. 1 BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER V(BR)CEO ICEO Collector-emitter breakdown voltage Collector-emitter cut-off current TEST CONDITIONS ICBO current hFE VCE(sat) VBE(sat) VBE(on) current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage 100 VCE = 30 V IB = 0 BD645 IB = 0 BD649 VCE = 40 V IB = 0 VCE = 60 V IB = 0 VCE = 50 V IE = 0 VCB = 120 V IE = 0 VCB = 100 V VCB = 40 V VCB = 70 V (see Note 5) BD651 TYP MAX 80 120 0.5 0.5 0.5 BD651 0.2 0.2 BD647 0.2 BD649 IE = 0 TC = 150C IE = 0 TC = 150C IE = 0 TC = 150C IE = 0 TC = 150C VEB = 5V IC = 0 VCE = 3V IC = 3A 0.2 BD651 2.0 BD645 mA 2.0 BD647 2.0 BD649 2.0 BD651 (see Notes 5 and 6) E T E L O S B O (see Notes 5 and 6) mA 0.5 BD645 IE = 0 UNIT V BD647 IE = 0 VCB = 80 V VCB = 60 V IEBO BD649 BD647 IB = 0 VCB = 50 V Emitter cut-off 60 IC = 30 mA VCB = 60 V Collector cut-off MIN BD645 5 mA 750 2 IB = 12 mA IC = 3A IB = 50 mA IC = 5A (see Notes 5 and 6) 3 V IC = 3A (see Notes 5 and 6) 2.5 V IB = VCE = 50 mA 3V IC = 5A (see Notes 5 and 6) 2.5 V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RJC RJA 2 Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX UNIT 2.0 C/W 62.5 C/W MAY 1993 - REVISED JUNE 2013 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TCS130AD TC = -40C TC = 25C TC = 100C 10000 1000 100 0*5 COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V hFE - Typical DC Current Gain 50000 TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT TCS130AB tp = 300 s, duty cycle < 2% IB = I C / 100 1*5 1*0 E T E L O S B O VCE = 3 V tp = 300 s, duty cycle < 2% 1*0 2*0 10 0*5 0*5 IC - Collector Current - A 1*0 10 IC - Collector Current - A Figure 1. Figure 2. 3*0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40C TC = 25C TC = 100C 2*5 BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS130AC TC = -40C TC = 25C TC = 100C 2*0 1*5 1*0 0*5 0*5 IB = IC / 100 tp = 300 s, duty cycle < 2% 1*0 10 IC - Collector Current - A Figure 3. MAY 1993 - REVISED JUNE 2013 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. 3 BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 10 SAS130AC 1*0 0*1 BD645 BD647 BD649 BD651 E T E L O S B O 0.01 1*0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS130AC Ptot - Maximum Power Dissipation - W 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 5. 4 MAY 1993 - REVISED JUNE 2013 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.