Semiconductor Group 1
BC 617
BC 618
NPN Silicon Darlington Transistors BC 617
BC 618
5.91
Maximum Ratings
Type Marking Package1)
Pin Configuration
BC 617
BC 618 Q62702-C1137
Q62702-C1138
– TO-92
123
Ordering Code
C B E
1) For detailed information see chapter Package Outlines.
2) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Parameter Symbol BC 617 Unit
Collector-emitter voltage VCE0 40 V
Collector-base voltage VCB0 50
Emitter-base voltage VEB0
Collector current ICmA
Base current IB
Total power dissipation, TC=66 ˚C Ptot mW
Junction temperature Tj˚C
Storage temperature range Tstg – 65 … + 150
Thermal Resistance
Junction - ambient Rth JA ≤ 200 K/W
Peak collector current ICM
Junction - case2) Rth JC ≤ 135
Peak base current IBM
BC 618
55
80
12
500
100
625
150
800
200
Values
●High current gain
●High collector current
1
2
3
Semiconductor Group 2
BC 617
BC 618
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
DC current gain
I
C = 100 µA; VCE = 5 V BC 617
BC 618
I
C = 10 mA; VCE = 5 V1) BC 617
BC 618
I
C = 200 mA; VCE = 5 V1) BC 617
BC 618
I
C = 1000 mA; VCE = 5 V1) BC 617
BC 618
VCollector-emitter breakdown voltage
I
C = 10 mA BC 617
BC 618
V(BR)CE0
40
55 –
––
–
nA
nA
µA
µA
Collector cutoff current
VCB = 40 V BC 617
VCB = 60 V BC 618
VCB = 40 V, TA = 150 ˚C BC 617
VCB = 60 V, TA = 150 ˚C BC 618
ICB0 –
–
–
–
–
–
–
–
100
100
10
10
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Collector-base breakdown voltage
I
C = 100 µABC 617
BC 618
V(BR)CB0
50
80 –
––
–
Emitter-base breakdown voltage
I
E = 10 µAV(BR)EB0 12 – –
V
Collector-emitter saturation voltage1)
I
C = 200 mA; IB = 0.2 mA VCEsat – – 1.1
–hFE 4000
2000
10000
4000
20000
10000
10000
4000
–
–
–
–
–
–
–
–
–
–
–
–
70000
50000
–
–
Base-emitter saturation voltage1)
I
C = 200 mA; IB = 0.2 mA VBEsat – – 1.6
nAEmitter cutoff current
VEB = 4 V IEB0 – – 100
1) Pulse test: t≤300 µs, D≤ 2%.
Semiconductor Group 3
BC 617
BC 618
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
MHzTransition frequency
I
C = 50 mA, VCE = 5 V, f = 20 MHz fT– 150 –
UnitValuesParameter Symbol
min. typ. max.
AC characteristics
pFOutput capacitance
VCB = 10 V, f = 1 MHz Cobo – 3.5 –
Total power dissipation Ptot =f(TA;TC)Collector cutoff current ICB0 =f(TA)
VCB = 40 V, 60 V
Semiconductor Group 4
BC 617
BC 618
Transition frequency fT=f(IC)
VCE = 5 V, f = 20 MHz
Base-emitter saturation voltage
VBEsat =f(IC)
hFE = 1000, parameter = TA
Permissible pulse load RthJA =f(tp)
Collector-emitter saturation voltage
VCEsat =f(IC)
hFE = 1000, parameter = TA
Semiconductor Group 5
BC 617
BC 618
DC current gain hFE = f (IC)Capacitance C=f(VEB, VCB)
