Copyright 2002 Semicoa Semiconductors, Inc.
Rev. N 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 1
www.SEMICOA.com
2N2222AUB
Silicon NPN Transisto
r
Data Sheet
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N2222AUBJ)
• JANTX level (2N2222AUBJX)
• JANTXV level (2N2222AUBJV)
• JANS level (2N2222AUBJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• General purpose
• Low power
• NPN silicon transistor
Features
• Hermetically sealed Cersot ceramic
• Also available in chip configuration
• Chip geometry 0400
• Reference document:
MIL-PRF-19500/255
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 50
Volts
Collector-Base Voltage VCBO 75
Volts
Emitter-Base Voltage VEBO 6
Volts
Collector Current, Continuous IC 800
mA
Power Dissipation, TA = 25OC
Derate above 37.5OC PT 0.5
3.08
W
mW/°C
Operating Junction Temperature TJ -65 to +200 °C
Storage Temperature TSTG -65 to +200 °C
Thermal Resistance RθJA 325 °C/W
Copyright 2002 Semicoa Semiconductors, Inc.
Rev. N 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
2N2222AUB
Silicon NPN Transisto
r
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO I
C = 10 mA 50 Volts
Collector-Base Cutoff Current ICBO1 V
CB = 75 Volts 10 µA
Collector-Base Cutoff Current ICBO2 V
CB = 60 Volts 10 nA
Collector-Base Cutoff Current ICBO3 V
CB = 60 Volts, TA = 150OC 10
µA
Collector-Emitter Cutoff Current ICES V
CE = 50 Volts 50 nA
Emitter-Base Cutoff Current IEBO1 V
EB = 6 Volts 10 µA
Emitter-Base Cutoff Current IEBO2 V
EB = 4 Volts 10 nA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
IC = 0.1 mA, VCE = 10 Volts
IC = 1.0 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
IC = 150 mA, VCE = 10 Volts
IC = 500 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts,
TA = -55OC
50
75
100
100
30
35
325
300
Base-Emitter Saturation Voltage VBEsat1
VBEsat2
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.6
1.2
2.0 Volts
Collector-Emitter Saturation Voltage VCEsat1
VCEsat2
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.3
1.0 Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio |hFE| VCE = 20 Volts, IC = 20 mA,
f = 100 MHz 2.5
Small Signal Short Circuit Forward
Current Transfer Ratio hFE VCE = 10 Volts, IC = 1 mA,
f = 1 kHz 50
Open Circuit Output Capacitance COBO VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz 8
pF
Open Circuit Input Capacitance CIBO VEB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz 25
pF
Switching Characteristics
Saturated Turn-Off Time toff 300 ns
Saturated Turn-On Time ton 35 ns
