BUZ111SL SPP80N05L SIPMOS (R) Power Transistor * N channel * Enhancement mode * Logic Level * Avalanche-rated * dv /dt rated * 175C operating temperature * also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ111SL 55 V 80 A 0.01 TO-220 AB Q67040-S4003-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 100 C Values Unit A 80 Pulsed drain current IDpuls TC = 25 C 320 Avalanche energy, single pulse mJ E AS ID = 80 A, V DD = 25 V, RGS = 25 L = 220 H, Tj = 25 C 700 Avalanche current,limited by Tjmax IAR 80 A Avalanche energy,periodic limited by Tjmax E AR 25 mJ Reverse diode dv/dt dv/dt kV/s IS = 80 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C 6 Gate source voltage V GS Power dissipation P tot TC = 25 C Semiconductor Group 14 V W 250 1 28/Jan/1998 BUZ111SL SPP80N05L Maximum Ratings Parameter Symbol Operating temperature Tj -55 ... + 175 Storage temperature Tstg -55 ... + 175 Thermal resistance, junction - case RthJC 0.6 Thermal resistance, junction - ambient RthJA 62 Values IEC climatic category, DIN IEC 68-1 Unit C K/W 55 / 175 / 56 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage 55 - - 1.2 1.6 2 V GS(th) V GS=V DS, ID = 240 A Zero gate voltage drain current V V (BR)DSS A IDSS V DS = 50 V, V GS = 0 V, Tj = -40 C - - 0.1 V DS = 50 V, V GS = 0 V, Tj = 25 C - 0.1 1 V DS = 50 V, V GS = 0 V, Tj = 150 C - - 100 Gate-source leakage current V GS = 20 V, VDS = 0 V Drain-Source on-resistance nA IGSS - 10 100 RDS(on) V GS = 4.5 V, ID = 80 A - 0.0085 0.01 V GS = 10 V, ID = 80 A - 0.0055 0.007 Semiconductor Group 2 28/Jan/1998 BUZ111SL SPP80N05L Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance V DS 2 * ID * RDS(on)max = 2 V, ID = 80 A Input capacitance 30 pF - 3850 4800 - 1090 1357 - 570 715 Crss V GS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time - Coss V GS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance 95 Ciss V GS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance S gfs ns td(on) V DD = 30 V, VGS = 4.5 V, ID = 80 A RG = 1.3 Rise time - 30 45 - 37 56 - 70 105 - 36 55 tr V DD = 30 V, VGS = 4.5 V, ID = 80 A RG = 1.3 Turn-off delay time td(off) V DD = 30 V, VGS = 4.5 V, ID = 80 A RG = 1.3 Fall time tf V DD = 30 V, VGS = 4.5 V, ID = 80 A RG = 1.3 Gate charge at threshold V DD = 40 V, ID 0.1 A, V GS =0 to 1 V Gate charge at 5.0 V 5.7 - 92 138 - 155 232 V V (plateau) V DD = 40 V, ID = 80 A Semiconductor Group 3.8 Qg(total) V DD = 40 V, ID = 80 A, VGS =0 to 10 V Gate plateau voltage Qg(5) V DD = 40 V, ID = 80 A, VGS =0 to 5 V Gate charge total nC Qg(th) - 3 3.4 - 28/Jan/1998 BUZ111SL SPP80N05L Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current TC = 25 C Inverse diode direct current,pulsed - - 320 V 1.25 1.8 ns trr - 105 157 C Qrr - V R = 30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 80 - V R = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge - V SD V GS = 0 V, IF = 160 A Reverse recovery time ISM TC = 25 C Inverse diode forward voltage A IS 4 0.31 0.47 28/Jan/1998 BUZ111SL SPP80N05L Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 4 V 260 90 W A 220 Ptot ID 200 180 70 60 160 140 50 120 40 100 30 80 60 20 40 10 20 0 0 0 20 40 60 80 100 120 140 C 180 0 20 40 60 80 100 120 140 TC C 180 TC Safe operating area ID = (VDS) parameter: D = 0, TC = 25C Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 10 3 D K/W /I t = 29.0s p V DS A ZthJC 10 2 10 -1 R DS (o n) = ID 100 s 10 -2 D = 0.50 10 1 ms 10 -3 0.20 1 0.10 0.05 10 ms 10 -4 DC 0.02 single pulse 0.01 10 0 0 10 10 1 V 10 10 -5 -7 10 2 VDS Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 5 28/Jan/1998 BUZ111SL SPP80N05L Typ. output characteristics ID = (VDS) parameter: tp = 80 s 180 Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 0.032 Ptot = 250W k l j i hg f e ID a A VGS [V] a 2.5 140 120 b 3.0 d c 3.5 d 4.0 e 4.5 f 5.0 g 5.5 h 6.0 i 6.5 j 7.0 100 80 c 60 40 k 8.0 l 10.0 b c RDS (on) 0.024 0.020 0.016 0.012 d e f h gi j k 0.008 b 0.004 VGS [V] = 20 a 2.5 3.0 a 0 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i 6.5 7.0 j 8.0 k 10.0 0.000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 VDS 0 20 40 60 80 100 A 140 ID Typ. transfer characteristics ID = f (V GS) parameter: tp = 80 s VDS2 x ID x RDS(on)max 100 I A D 60 40 20 0 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 28/Jan/1998 BUZ111SL SPP80N05L Gate threshold voltage Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 80 A, VGS = 4.5 V V GS(th)= f (Tj) parameter:VGS=VDS,ID = 240A 0.032 3.0 V 2.6 RDS (on) 0.024 VGS(th) 2.4 2.2 2.0 0.020 1.8 1.6 0.016 0.012 98% 1.4 typ 1.2 1.0 max 0.8 0.008 0.6 0.004 0.4 0.000 0.2 0.0 -60 -20 20 60 100 C 180 -60 typ min -20 20 60 100 140 V 200 Tj Tj Typ. capacitances Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 3 Ciss nF A IF C 10 0 10 2 Coss Crss 10 -1 10 1 Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 -2 0 5 10 15 20 25 30 V 40 VDS Semiconductor Group 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 28/Jan/1998 BUZ111SL SPP80N05L Avalanche energy EAS = (Tj) parameter: ID = 80 A, VDD = 25 V RGS = 25 , L = 220 H Typ. gate charge VGS = (QGate) parameter: ID puls = 80 A 16 750 mJ V 650 EAS 600 VGS 550 12 500 10 450 400 8 350 0,2 VDS max 300 0,8 VDS max 6 250 200 4 150 100 2 50 0 20 0 40 60 80 100 120 140 C 180 Tj 0 40 80 120 160 nC 220 Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 C 180 Tj Semiconductor Group 8 28/Jan/1998