DS 75 DSA 75 DSI 75 DSAI 75 VRRM = 1200-1800 V IF(RMS) = 160 A IF(AV)M = 110 A Rectifier Diode Avalanche Diode Replacements see page 3 VRSM V V(BR)min VRRM Anode Cathode on stud on stud V V 1300 - 1200 DS 75-12B DSI 75-12B 1300 1700 1900 1300 1760 1950 1200 1600 1800 DSA 75-12B DSA 75-16B DSA 75-18B DSAI 75-12B DSAI 75-16B DSAI 75-18B DO-203 AB C A A DS DSA DSI DSAI C 1/4-28UNF Only for Avalanche Diodes A = Anode Symbol Test Conditions Maximum Ratings IF(RMS) IF(AV)M TVJ = TVJM Tcase = 100C; 180 sine PRSM DSA(I) types, TVJ = TVJM, tp = 10 s IFSM TVJ = 45C; VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1400 1500 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1250 1310 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 9800 9450 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 7820 7210 A2s A2s C = Cathode Features International standard package, JEDEC DO-203 AB (DO-5) Planar glassivated chips Applications High power rectifiers Field supply for DC motors Power supplies o e s a h p VF IF 1.17 V VT0 rT For power-loss calculations only TVJ = TVJM 0.75 2 V m RthJC RthJH DC current DC current 0.5 0.9 K/W K/W dS dA a Creepage distance on surface Strike distance through air Max. allowable acceleration 4.05 3.9 100 mm mm m/s2 mA max. 6 6 1/4"-28 UNF 1.6 TVJ = TVJM; VR = VRRM = 150 A; TVJ = 25C Characteristic Values max. IR 4.1 27 Test Conditions 7 max. Symbol Dimensions in mm (1 mm = 0.0394") 2 Nm lb.in. g 13 Weight 2.4-4.5 21-40 21 SW 17 Mounting torque C C C max. Md -40...+180 180 -40...+180 11.3 TVJ TVJM Tstg t u Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits 6.1 kW 13 20 3 A A 10 I2t 160 110 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions 20190129c (c) 2019 IXYS All rights reserved 1-3 DS 75 DSA 75 1500 200 typ. A lim. A 1045 10 50Hz, 80%VRRM TVJ = 45C 6 I2t TVJ = 45C 1000 TVJ= 180C TVJ= 25C VR = 0 V A2s IFSM IF 150 DSI 75 DSAI 75 TVJ = 180C 4 100 500 TVJ = 180C 2 50 0 0.0 Fig. 1 0.5 3 10 104 0 10-3 1.5 V 1.0 VF Forward characteristics Fig. 2 10-2 10-1 t s 100 Surge overload current IFSM: crest value, t: duration 8 910 4 5 6 7 ms t 3 2 1 I2t versus time (1-10 ms) Fig. 3 200 200 A W RthJA : IF(AV)M 1 K/W 1.2 K/W 1.6 K/W 2 K/W 3 K/W 4 K/W 150 PF 100 100 DC 180 sin 120 60 30 50 DC 180 sin 120 60 30 150 t u 50 0 0 0 Fig. 4 1.5 K/W ZthJH 1.0 0.5 o e s a h p 50 150 IF(AV)M 100 A 200 00 50 150 C 200 100 0 Tamb Power dissipation versus forward current and ambient temperature Fig. 5 30 60 120 180 DC 40 80 120 160 C 200 Tcase Max. forward current at case temperature RthJH for various conduction angles d: d RthJH (K/W) DC 180 120 60 30 0.900 1.028 1.085 1.272 1.476 Constants for ZthJH calculation: i 0.0 10-3 Fig. 6 10-2 10-1 100 101 Transient thermal impedance junction to heatsink 102 t s 103 1 2 3 4 Rthi (K/W) ti (s) 0.0731 0.1234 0.4035 0.3000 0.0015 0.0237 0.4838 1.5 20190129c (c) 2019 IXYS All rights reserved 2-3 DS 75 DSA 75 Type Replacements DSI75-12B DMA200X1600NA; DMA200XA1600NA DSI 75 DSAI 75 DSAI75-12B DMA200X1600NA; DMA200XA1600NA; DAA200X1800NA; DAA200XA1800NA DSAI75-16B DMA200X1600NA; DMA200XA1600NA; DAA200X1800NA; DAA200XA1800NA DSAI75-18B DAA200X1800NA; DAA200XA1800NA DS75-12B DMA200X1600NA; DMA200XA1600NA DSA75-12B DMA200X1600NA; DMA200XA1600NA; DAA200X1800NA; DAA200XA1800NA DSA75-16B DMA200X1600NA; DMA200XA1600NA; DAA200X1800NA; DAA200XA1800NA DSA75-18B DAA200X1800NA; DAA200XA1800NA t u o e s a h p 20190129c (c) 2019 IXYS All rights reserved 3-3