© 2019 IXYS All rights reserved 1 - 3
DS 75 DSI 75
DSA 75 DSAI 75
phase-out
20190129c
VRSM V(BR)min ① VRRM Anode Cathode
V V V on stud on stud
1300 - 1200 DS 75-12B DSI 75-12B
1300 1300 1200 DSA 75-12B DSAI 75-12B
1700 1760 1600 DSA 75-16B DSAI 75-16B
1900 1950 1800 DSA 75-18B DSAI 75-18B
① Only for Avalanche Diodes
VRRM = 1200-1800 V
IF(RMS) = 160 A
IF(AV)M = 110 A
Features
● International standard package,
JEDEC DO-203 AB (DO-5)
● Planar glassivated chips
Applications
● High power rectifi ers
● Field supply for DC motors
● Power supplies
Advantages
● Space and weight savings
● Simple mounting
● Improved temperature and power
cycling
● Reduced protection circuits
max. 2711.3
max. 13
6 3
max. 2
7
4.1
¼“-28 UNF
6.1
13
SW 17
max. 1.6
10
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
Rectifi er Diode
Avalanche Diode
A = Anode C = Cathode
DO-203 AB
1/4-28UNF
DS DSI
DSA DSAI
C
A
A
C
Symbol Test Conditions Maximum Ratings
IF(RMS) TVJ = TVJM 160 A
IF(AV)M Tcase = 100°C; 180° sine 110 A
PRSM DSA(I) types, TVJ = TVJM, tp = 10 µs 20 kW
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 1400 A
VR = 0 t = 8.3 ms (60 Hz), sine 1500 A
TVJ = TVJM t = 10 ms (50 Hz), sine 1250 A
VR = 0 t = 8.3 ms (60 Hz), sine 1310 A
I2t TVJ = 45°C t = 10 ms (50 Hz), sine 9800 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 9450 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 7820 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 7210 A2s
TVJ -40...+180 °C
TVJM 180 °C
Tstg -40...+180 °C
Md Mounting torque 2.4-4.5 Nm
21-40 lb.in.
Weight 21 g
Symbol Test Conditions Characteristic Values
IR TVJ = TVJM; VR = VRRM ≤ 6 mA
VF IF = 150 A; TVJ = 25°C ≤ 1.17 V
VT0 For power-loss calculations only 0.75 V
rT TVJ = TVJM 2 mΩ
RthJC DC current 0.5 K/W
RthJH DC current 0.9 K/W
dS Creepage distance on surface 4.05 mm
dA Strike distance through air 3.9 mm
a Max. allowable acceleration 100 m/s2
Replacements see page 3
© 2019 IXYS All rights reserved 2 - 3
DS 75 DSI 75
DSA 75 DSAI 75
phase-out
20190129c
2 3 4 5 6 7 8 91 10
104
105
10-3 10-2 10-1 100
0
500
1000
1500
0.0 0.5 1.0 1.5
0
50
100
150
200
0 50 100 150 200
0
50
100
150
200
0 50 100 150 200
0
10-3 10-2 10-1 100101102103
0.0
0.5
1.0
1.5
I2t
IFSM
IF
A
VFt
s
t
ms
PF
W
IF(AV)M
A
Tamb
°C
t
s
ZthJH
K/W
A2s
0 40 80 120 160 200
0
50
100
150
200
IF(AV)M
Tc
A
V
A
°C
Fig. 6 Transient thermal impedance junction to heatsink
RthJH for various conduction angles d:
d RthJH (K/W)
DC 0.900
180° 1.028
120° 1.085
60° 1.272
30° 1.476
Constants for ZthJH calculation:
i Rthi (K/W) ti (s)
1 0.0731 0.0015
2 0.1234 0.0237
3 0.4035 0.4838
4 0.3000 1.5
Fig. 1 Forward characteristics Fig. 2 Surge overload current
IFSM: crest value, t: duration
Fig. 3 I2t versus time (1-10 ms)
Fig. 4 Power dissipation versus forward current and ambient temperature Fig. 5 Max. forward current at case
temperature
6
4
2
typ. lim.
TVJ= 180°C
TVJ= 25°C
TVJ = 180°C
TVJ = 45°C
50Hz, 80%VRRM
TVJ = 45°C
TVJ = 180°C
VR = 0 V
DC
180° sin
120°
60°
30°
DC
180° sin
120°
60°
30°
RthJA :
1 K/W
1.2 K/W
1.6 K/W
2 K/W
3 K/W
4 K/W
30°
60°
120°
180°
DC
ase
10
10 4
3
© 2019 IXYS All rights reserved 3 - 3
DS 75 DSI 75
DSA 75 DSAI 75
phase-out
20190129c
Type Replacements
DSI75-12B DMA200X1600NA; DMA200XA1600NA
DSAI75-12B DMA200X1600NA; DMA200XA1600NA; DAA200X1800NA; DAA200XA1800NA
DSAI75-16B DMA200X1600NA; DMA200XA1600NA; DAA200X1800NA; DAA200XA1800NA
DSAI75-18B DAA200X1800NA; DAA200XA1800NA
DS75-12B DMA200X1600NA; DMA200XA1600NA
DSA75-12B DMA200X1600NA; DMA200XA1600NA; DAA200X1800NA; DAA200XA1800NA
DSA75-16B DMA200X1600NA; DMA200XA1600NA; DAA200X1800NA; DAA200XA1800NA
DSA75-18B DAA200X1800NA; DAA200XA1800NA
