Rev.2.00 Sep 07, 2005 page 1 of 7
2SK2084(L), 2SK2084(S)
Silicon N Channel MOS FET REJ03G0995-0200
(Previous: ADE-208-13 42)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for switching regulator, DC - DC converter
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK(L)-(2))
1. Gate
2. Drain
3. Source
4. Drain
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S))
123
4
123
4D
G
S
2SK2084(L), 2SK2084(S)
Rev.2.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 20 V
Gate to source voltage VGSS ±20 V
Drain current ID 7 A
Drain peak current ID(pulse)*1 28 A
Body to drain diode reverse drain current IDR 7 A
Channel dissipation Pch*2 20 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V(BR)DSS 20 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
Zero gate voltage drain current IDSS — — 100 µA VDS = 16 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V ID = 1 mA, VDS = 10 V
— 0.04 0.053 Ω I
D = 4 A, VGS = 10 V*3
Static drain to source on state
resistance RDS(on) — 0.058 0.075 Ω I
D = 4 A, VGS = 4 V*3
Forward transfer admittance |yfs| 5 9 — S ID = 4 A, VDS = 10 V*3
Input capacitance Ciss — 800 — pF
Output capacitance Coss — 680 — pF
Reverse transfer capacitance Crss — 165 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 15 — ns
Rise time tr — 60 — ns
Turn-off delay time td(off) — 100 — ns
Fall time tf — 80 — ns
ID = 4 A, VGS = 10 V,
RL = 5 Ω
Body to drain diode forward v oltage VDF — 0.9 — V IF = 7 A, VGS = 0
Body to drain diode reverse recover y
time trr — 80 — ns
IF = 7 A, VGS = 0,
diF / dt = 20 A / µs
Note: 3. Pulse Test
2SK2084(L), 2SK2084(S)
Rev.2.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
Drain Current I
D
(A)
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage
V
DS (on)
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Static Drain to Source on State
Resistance vs. Drain Current
Case Temperature T
C
(°C)
Channel Dissipation Pch (W)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
40
30
20
10
050 100 150 200
50
30
10
3
1
0.3
0.1
0.3 1 3 10 30
1 ms
Operation in
this area is
limited by R
DS(on)
Ta = 25°C
DC Operation
(Tc = 25°C)
100 µs
10 µs
PW = 10 ms (1shot)
20
16
12
8
4
0246810
V
GS = 2.5 V
3.5 V
10 V
6 V
4 V
3 V
Pulse Test
20
16
12
8
4
012345
V
DS = 10 V
Pulse Test
Tc = 75°C
25°C
–25°C
0.5
0.4
0.3
0.2
0.1
0246810
Pulse Test
2 A
1 A
ID = 5 A
0.2
0.1
0.02
0.05
0.01
0.1 0.2 0.5 1 2 5 10 20
10 V
V
GS = 4 V
Pulse Test
2SK2084(L), 2SK2084(S)
Rev.2.00 Sep 07, 2005 page 4 of 7
Case Temperature T
C
(°C)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Static Drain to Source on State
Resistance vs. Temperature
Drain Current I
D
(A)
Forward Transfer Admittance yfs (S)
Forward Transfer Admittance
vs. Drain Current
Reverse Drain Current I
DR
(A)
Reverse Recovery Time trr (ns)
Body to Drain Diode Reverse
Recovery Time
Drain to Source Voltage V
DS
(V)
Capacitance C (pF)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Switching Time t (ns)
Switching Characteristics
0.20
0.16
0.12
0.08
0.04
–40 0 40 80 120 160
0
Pulse Test
V
GS
= 4 V
10 V
5 A
1 A
2 A
1 A
2 A
5 A
0.1
20
10
5
2
1
0.5
0.2 0.5 1 2 5 10
Tc = –25°C
25°C
75°C
V
DS = 10 V
Pulse Test
0.1 0.2 0.5 1 2 5 10
200
100
20
10
50
di / dt = 20 A / µs
V
GS
= 0, Ta = 25°C
10000
1000
100
10
048121620
Ciss
Coss
Crss
V
GS
= 0
f = 1 MHz
50
40
30
20
10
0 8 16 24 32 40
20
16
12
8
4
0
V
GS
V
DS
V
DD = 20 V
10 V
5 V
V
DD = 20 V
10 V
5 V
0.1 0.2 0.5 1 2 5 10
200
100
20
10
50
V
GS
= 10 V
V
DD = 20 V
PW = 5 µs
duty < 1 %
tf
tr
td(on)
td(off)
2SK2084(L), 2SK2084(S)
Rev.2.00 Sep 07, 2005 page 5 of 7
Source to Drain Voltage VSD (V)
Reverse Drain Current IDR (A)
Reverse Drain Current vs.
Source to Drain Voltage
Switching Time Test Circuit Waveforms
Pulse Width PW (s)
Normalized Transient Thermal Impedance γS (t)
Normalized Transient Thermal Impedance vs. Pulse Width
20
16
12
8
4
00.4 0.8 1.2 1.6 2.0
Pulse Test
V
GS
= 0, –5 V
10 V
5 V
3
1
0.3
0.1
0.03
0.01
10 µ 100 µ 1 m 10 m 100 m 1 10
DM
P
PW
T
D = PW
T
θch – c(t) = γs (t) • θch – c
θch – c = 6.25°C/W, Tc = 25°C
D = 1
0.5
0.2
0.01
0.02
0.1
0.05
1 shot Pulse
Tc = 25°C
Vin Monitor
D.U.T.
Vin
10 V
RL
V
DD
= 20 V
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50 Ω
90%
10%
tf
2SK2084(L), 2SK2084(S)
Rev.2.00 Sep 07, 2005 page 6 of 7
Package Dimensions
6.5 ± 0.5 2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
0.55 ± 0.1
5.5 ± 0.5 1.7 ± 0.5
16.2 ± 0.5
4.7 ± 0.5
5.4 ± 0.5
1.15 ± 0.1
2.29 ± 0.5 2.29 ± 0.5
0.8 ± 0.1
0.55 ± 0.1
3.1 ± 0.5
(0.7)
Package Name
PRSS0004ZD-B DPAK(L)-(2) / DPAK(L)-(2)V
MASS[Typ.]
0.42g
RENESAS CodeJEITA Package Code
Unit: mm
6.5 ± 0.5
5.4 ± 0.5
2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
0.55 ± 0.1
1.5 ± 0.5
5.5 ± 0.5
2.5 ± 0.5
(1.2)
0.8 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
1.2 Max
(5.1)
(5.1)
1.0 Max.
(0.1)(0.1)
Package Name
PRSS0004ZD-C DPAK(S) / DPAK(S)V
MASS[Typ.]
0.28gSC-63
RENESAS CodeJEITA Package Code
Unit: mm
2SK2084(L), 2SK2084(S)
Rev.2.00 Sep 07, 2005 page 7 of 7
Ordering Information
Part Name Quantity Shipping Container
2SK2084L-E 3000 pcs Box (Sack)
2SK2084STL-E 3000 pcs Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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