Original Creation Date: 10/30/95
Last Update Date: 10/21/96
Last Major Revision Date: 10/30/95
MN100370-X REV 0C0 MILITARY DATA SHEET
LOW POWER UNIVERSAL DEMULTIPLEXER/DECODER
General Description
The 100370 universal demultiplexer/decoder functions as either a dual 1-of-4 decoder or as
a single 1-of-8 decoder, depending on the signal applied to the Mode Control (M) input.
In the dual mode, each half has a pair of active - LOW Enable (E) inputs. Pin assignments
for the E Inputs are such that inthe 1-of-8 mode they can easily be tied together in pairs
to provide two active-LOW enable (E1a to E1b, E2a to E2b). Signals applied to auxiliary
inputs Ha, Hb and Hc determine whether the outputs are active HIGH or active LOW. In the
dual 1-of-4 mode the Address inputs are Aoa, A1a and Aob, A1b with A2a unused (i.e., left
open, tied to VEE or with LOW signal applied). In the 1-of-8 mode, the Address inputs are
Aoa, A1a, A2a with Aob and A1b LOW or open. All inputs have 50K ohm pulldown resistors.
NS Part Numbers
100370DMQB
100370FMQB
Industry Part Number
100370
Prime Die
F370
Processing
MIL-STD-883, Method 5004
Quality Conformance Inspection
MIL-STD-883, Method 5005
Subgrp Description Temp ( C)
o
1 Static tests at +25
2 Static tests at +125
3 Static tests at -55
4 Dynamic tests at +25
5 Dynamic tests at +125
6 Dynamic tests at -55
7 Functional tests at +25
8A Functional tests at +125
8B Functional tests at -55
9 Switching tests at +25
10 Switching tests at +125
11 Switching tests at -55
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MILITARY DATA SHEET
MN100370-X REV 0C0
Features
- 35% power reduction of the 100170
- 2000V ESD protection
- Pin/function compatible with 100170
- Voltage compensated operating range= -4.2V to -5.7V
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MILITARY DATA SHEET
MN100370-X REV 0C0
(Absolute Maximum Ratings)
(Note 1)
Storage Temperature (Tstg) -65C to +150C
Maximum Junction Temperature (Tj) +175CCeramic +150CPlastic
Vee Pin Potential to Ground Pin -7.0V to +0.5V
Input Voltage (DC) Vee to +0.5V
Output Current (DC Output HIGH) -50 mA
ESD
(Note 2) >2000V
Note 1: Absolute maximum ratings are those values beyond which the device may be damaged or
have its useful life impaired. Functional operation under these conditions is not
implied.
Note 2: ESD testing conforms to MIL-STD-883, Method 3015.
Recommended Operating Conditions
Case Temperature (Tc) 0 C to +85 CCommercial -40 C to +85CIndustrial -55C to +125CMilitary
Supply Voltage (Vee) -5.7V to -4.2V
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MN100370-X REV 0C0 MILITARY DATA SHEET
Electrical Characteristics
DC PARAMETERS
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: Vee Range: -4.2V to -5.7V, Tc= -55C to +125C, VCC=VCCA=GND
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
IIH Input HIGH
Current VEE=-5.7V, VM=-0.87V 1, 3 INPUTS 240 uA 1, 2
1, 3 INPUTS 340 uA 3
IIL Input Low Current VEE=-4.2V, VM=-1.83V 1, 3 INPUTS 0.5 uA 1, 2,
3
VOH Output HIGH
Voltage VEE=-4.2V/-5.7V, VIH=-0.87V,
VIL=-1.83V, LOADING: 50 Ohms to -2.0V 1, 3 OUTPUTS -1025 -870 mV 1, 2
1, 3 OUTPUTS -1085 -870 mV 3
VOL Output LOW
Voltage Vee=-4.2V/-5.7V, VIH=-0.87V,
VIL=-1.83V, LOADING: 50 Ohms to -2.0V 1, 3 OUTPUTS -1830 -1620 mV 1, 2
1, 3 OUTPUTS -1830 -1555 mV 3
VOHC Output HIGH
Voltage Corner
Point High
Vee=-4.2V/-5.7V, VIH=-1.165V,
VIL=-1.475V, Loading: 50 Ohms to -2.0V 1, 3 OUTPUTS -1035 mV 1, 2
1, 3 OUTPUTS -1085 mV 3
VOLC Output LOW
Voltage Corner
Point High
Vee=-4.2V/-5.7V, VIH=-1.165V,
VIL=-1.475V, LOADING: 50 Ohms to -2.0V 1, 3 OUTPUTS -1610 mV 1, 2
1, 3 OUTPUTS -1555 mV 3
VIH Input HIGH
Voltage 1,
3, 7 INPUTS -1165 -870 mV 1, 2,
3
VIL Input LOW Voltage 1,
3, 7 INPUTS -1830 -1475 mV 1, 2,
3
IEE Input LOW Voltage VEE=-4.2/-5.7V 1, 3 INPUTS -105 -36 mA 1, 2,
3
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MN100370-X REV 0C0 MILITARY DATA SHEET
Electrical Characteristics
AC PARAMETERS
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC: VEE Range: -4.2V to -5.7V, LOADING: 50 Ohms to -2.0V, VCC=VCCA=GND
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
tPLH/tPHL(
1) Propagation Delay VEE=-4.2/-5.7V 2, 4 Ena/Enb
to Zn 0.4 2.2 ns 9
2, 4 Ena/Enb
to Zn 0.4 2.7 ns 10
2, 4 Ena/Enb
to Zn 0.3 2.4 ns 11
tPLH/tPHL(
2) Propagation Delay VEE=-4.2/-5.7V 2, 4 Ana/Anb
to Zn 0.4 2.4 ns 9
2, 4 Ana/Anb
to Zn 0.4 2.9 ns 10
2, 4 Ana/Anb
to Zn 0.3 2.6 ns 11
tPLH/tPHL(
3) Propagation Delay VEE=-4.2/-5.7V 2, 4 Ha/Hb/H
c to Zn 0.4 2.4 ns 9
2, 4 Ha/Hb/H
c to Zn 0.4 2.9 ns 10
2, 4 Ha/Hb/H
c to Zn 0.3 2.6 ns 11
tPLH/tPHL(
4) Propagation Delay VEE=-4.2/-5.7V 2, 4 M to Zn 0.6 2.8 ns 9
2, 4 M to Zn 0.7 3.7 ns 10
2, 4 M to Zn 0.4 3.1 ns 11
tTLH/tTHL Transistion Time VEE=-4.2/-5.7V 6 Zn 0.3 1.6 ns 9, 10,
11
Note 1: Screen tested 100% on each device at -55 C, +25 C and +125 C temp., subgroups 1, 2,
3, 7 & 8.
Note 2: Screen tested 100% on each device at +25 C temp only, subgroup A9.
Note 3: Sample tested (Method 5005, Table 1) on each MFG. lot at +25 C, +125 C & -55 C temp.,
subgroups A1, 2, 3, 7 & 8.
Note 4: Sample tested (Method 5005, Table 1) on each MFG. lot at +25 C, subgroup A9, and at
+125 C & -55 C temp., subgroups A10 & 11.
Note 5: Sample tested (Method 5005, Table 1) on each MFG. lot at +25 C temp. only, subgroup
A9.
Note 6: Not tested at +25 C, +125 C & -55 C temp. (DESIGN CHARACTERIZATION DATA).
Note 7: Guaranteed by applying specified input condition and testing VOH/VOL.
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MILITARY DATA SHEET
MN100370-X REV 0C0
Graphics and Diagrams
GRAPHICS# DESCRIPTION
J24ERJ CERDIP(J), 24LD .400 CENTERS (P/P DWG)
P000090A CERDIP (J), 24LD .400 CENTERS (PIN OUT)
P000091A CERPAC, QUAD, 24 LEAD (PIN OUT)
W24BRE CERPAC, QUAD, 24 LEAD (P/P DWG)
See attached graphics following this page.
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