PIN DIODE Features e Useful attenuation from 1 pA to 100 mA bias. Capacitance below 0.4 pF. e Low distortion in switches and attenuators. e Rugged Unitrode construction. Description The 1N5767 and 1N5957 PIN diodes are based upon low capacitance PIN chips designed with long minority carrier lifetime, and thick intrinsic width. Thus operation as low as 1 MHz is possible with low distortion. Additionally, the low diode capacitance allows useful operation well into the micro- wave frequency range. The 1N5767 (5082-3080) is a general pur- pose low power PIN diode designed for both MAXIMUM RATINGS 1N5767 (5082 - 3080)SERIES 1N5957 SERIES switch and attenuator applications. The 1N5957 is primarily used as an attenu- ator PIN diode and is particularly suitable wherever current controlled, wide dynamic range resistance elements are required. The 1N5957 has also been characterized for the 75Q attenuator, commonly employed in CATV systems. Reverse Voltage (Vp) Volts (In = 10 yA) 100V Average Power Dissipation: (25 C) Free Air (P,) 400 mW (Derate linearly to 175 CT) Operating and Storage Temperature Range 65C to +175C 643 (Li) au UNITRODE ai1N5767 (5082-3080) 1N5957 Electrical Specifications (25C) Test Symbol 1N5767 1N5957 Conditions (5082- 3080) Total Capacitance (Max) Cr 0.4 pF 0.4 pF 50V, 1 MHz Series Resistance Rs 100092(min) 15002(min) 2000Qityp) 300022(typ) 10 pA, 100 MHz Series Resistance Rs 8Q(max) 8Q2(max) 4Qityp) 6Q(typ) 20 mA, 100 MHz Series Resistance Rs 2.59(max) 3.5Q(max) 1.5Q(typ) 2.0Q(typ) 100 mA, 100 MHz Carrier Lifetime (Min) T 1.0 uS 1.5(min} 2(typ) - = 10mA Reverse Current (Max) | tp 10 pA 10 pA Va = Rating Current for Rg = 752 los 0.8 mA- (typ) 0.7 mA 1.2 mA R, = 752 Return Loss (typ) 30 dB 30 dB Diode terminates 752 line Second Order Distortion (typ) ~40dB -50 dB Bridged tee attenuator atten. = 10 dB Third Order Distortion (typ) 60 dB 65 dB P,, = 50 dBmv F, = 10 MHz, F, = 13 MHz RESISTANCE FORWARD VOLTAGE VS FORWARD CURRENT VS FORWARD CURRENT (TYPICAL) (TYPICAL) 109 1N5767, s E 10.0 x= 2 a e = t 2 8 Ek c = 1.0 | tc n a ; 5 oO Q < = 0.10 oc 4 S 0.001 0.01 1.0 10.0 100.0 uw 0.10 Diode Current (mA) 0.01 0.001 0 2 4 6 8 1.0 FORWARD VOLTAGE (VOLTS) UNITRODE CORPORATION * 5 FORBES ROAD LEXINGTON, MA 02173 TEL. (617) 861-6540 TWX (710) 326-6509 TELEX 95-1064 644 PRINTED IN US A1N5767(5080-3080) 1N5957 TOTAL CAPACITANCE VS REVERSE VOLTAGE CrTotal Capacitance (pF) wn 1 2 5 10 20 50 100 200 500 1000 Vr- Reverse Voltage (V) PARALLEL RESISTANCE VS REVERSE VOLTAGE 100 50 20 Rp Parallel Resistance (k) 1 2 5 10 20 50 100 200 500 1000 Va Reverse Voltage (V) na MECHANICAL SPECIFICATIONS \ CATHODE BAND aes f 9 F021 (5.30) ove | 975 AK L_ 975 on (.256) DA L - max. ' MAX. MIN. 43) 0 MIN, (193) (24.7) ' (24,7) Dimensions English/Metric UNITRODE CORPORATION 5 FORBES ROAD LEXINGTON, MA 02173 + TEL. (617) 861-6540 TWX (710) 326-6509 TELEX 95-1064 645 PRINTED IN U.S.A.