AUIRFZ24NS AUIRFZ24NL AUTOMOTIVE GRADE HEXFET(R) Power MOSFET Features Advanced Planar Technology Low On-Resistance Dynamic dV/dT and dI/dT capability 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS RDS(on) max. Package Type AUIRFZ24NL TO-262 AUIRFZ24NS 17A D D D -Pak S D S G G TO-262 AUIRFZ24NL D2Pak AUIRFZ24NS G Gate D Drain Standard Pack Form Quantity Tube 50 Tube 50 Tape and Reel Left 800 2 0.07 ID Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications Base part number 55V S Source Orderable Part Number AUIRFZ24NL AUIRFZ24NS AUIRFZ24NSTRL Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter ID @ TC = 25C Continuous Drain Current, VGS @ 10V 17 ID @ TC = 100C IDM PD @TA = 25C Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation 12 68 3.8 PD @TC = 25C Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) VGS EAS IAR EAR dv/dt TJ TSTG Thermal Resistance Symbol RJC RJA Parameter Junction-to-Case Junction-to-Ambient (PCB Mount), D2 Pak Max. Units A 45 0.3 20 71 10 4.5 6.8 -55 to + 175 W W/C V mJ A mJ V/ns C 300 Typ. Max. Units --- --- 3.3 40 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-27 AUIRFZ24NS/L Static @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage Min. 55 Typ. Max. Units --- --- V Conditions VGS = 0V, ID = 250A V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- RDS(on) Static Drain-to-Source On-Resistance --- --- 0.07 VGS = 10V, ID = 10A VGS(th) Gate Threshold Voltage 2.0 --- 4.0 V VDS = VGS, ID = 250A gfs Forward Trans conductance Drain-to-Source Leakage Current --- --- --- 25 S IDSS 4.5 --- VDS = 25V, ID = 10A VDS = 55V, VGS = 0V --- --- 250 IGSS Gate-to-Source Forward Leakage --- --- 100 Gate-to-Source Reverse Leakage --- --- -100 0.052 --- V/C Reference to 25C, ID = 1mA A nA VDS = 44V,VGS = 0V,TJ =150C VGS = 20V VGS = -20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time --- --- --- --- --- --- --- --- --- --- 4.9 34 19 27 20 5.3 7.6 --- --- --- --- LS Internal Source Inductance --- 7.5 --- Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 370 140 65 --- --- --- Min. Typ. Max. Units --- --- 17 --- --- 68 --- --- --- --- 56 120 1.3 83 180 Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time ID = 10A nC VDS = 44V VGS = 10V, See Fig. 6 and 13 VDD = 28V ID = 10A ns RG= 24 RD = 2.6, See Fig. 10 Between lead, nH and center of die contact VGS = 0V pF VDS = 25V = 1.0MHz, See Fig. 5 Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = 10A,VGS = 0V ns TJ = 25C ,IF = 10A nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig.11) Limited by TJmax, starting TJ = 25C, L = 1.0mH, RG = 25, IAS = 10A, VGS =10V. (See fig.12) ISD 10A, di/dt 280A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 2 2015-10-27 AUIRFZ24NS/L Fig. 2 Typical Output Characteristics Fig. 1 Typical Output Characteristics 3.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 100 TJ = 25C TJ = 175C 10 V DS = 25V 20s PULSE WIDTH 1 4 5 6 7 8 9 VGS , Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 10 A I D = 17A 2.5 2.0 1.5 1.0 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 A 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig. 4 Normalized On-Resistance vs. Temperature 2015-10-27 AUIRFZ24NS/L 700 500 Ciss 400 Coss V GS , Gate-to-Source Voltage (V) 600 C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = Cds + C gd 300 200 Crss 100 0 1 10 100 I D = 10A V DS = 44V V DS = 28V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 12 16 A 20 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY R DS(on) I D , Drain Current (A) ISD , Reverse Drain Current (A) 8 Q G , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) TJ = 175C TJ = 25C 10 VGS = 0V 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD , Source-to-Drain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 4 4 A 2.0 100 10s 10 100s 1ms TC = 25C TJ = 175C Single Pulse 1 1 10ms 10 A 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 2015-10-27 AUIRFZ24NS/L 20 ID , Drain Current (A) 16 12 8 4 0 25 50 75 100 125 150 175 Fig 10a. Switching Time Test Circuit TC , Case Temperature ( C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2015-10-27 AUIRFZ24NS/L 15V VDS D.U.T RG IAS 20V tp DRIVER + V - DD A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) 140 L ID 4.2A 7.2A 10A TOP 120 BOTTOM 100 80 60 40 20 VDD = 25V 0 25 50 75 100 125 150 A 175 Starting TJ , Junction Temperature (C) I AS Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Fig 13a. Gate Charge Test Circuit 6 Qgd Qgodr Fig 13b. Gate Charge Waveform 2015-10-27 AUIRFZ24NS/L Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs 7 2015-10-27 AUIRFZ24NS/L D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2Pak (TO-263AB) Part Marking Information Part Number AUFZ24NS YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2015-10-27 AUIRFZ24NS/L TO-262 Package Outline (Dimensions are shown in millimeters (inches) TO-262 Part Marking Information Part Number AUFZ24NL YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-10-27 AUIRFZ24NS/L D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 2015-10-27 AUIRFZ24NS/L Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level D2-Pak Machine Model Human Body Model ESD MSL1 TO-262 Charged Device Model RoHS Compliant Class M2 (+/- 150V) AEC-Q101-002 Class H1A (+/- 500V) AEC-Q101-001 Class C5 (+/- 2000V) AEC-Q101-005 Yes Highest passing voltage. Revision History Date 10/27/2015 Comments Updated datasheet with corporate template Corrected ordering table on page 1. 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Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies' products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 11 2015-10-27