2016-01-04 2
Version 1.3 BPX 38
Maximum Ratings (TA = 25 °C)
Characteristics (TA = 25 °C)
Parameter Symbol Values Unit
Operating and storage temperature range Top; Tstg -40 ... 125 °C
Collector-emitter voltage VCE 50 V
Collector current IC50 mA
Collector surge current
(τ < 10 µs)
ICS 200 mA
Emitter-base voltage VEB 7 V
Total Power dissipation Ptot 220 mW
Thermal resistance RthJA 450 K / W
Parameter Symbol Values Unit
Wavelength of max. sensitivity (typ) λS max 880 nm
Spectral range of sensitivity (typ) λ10% (typ) 450
... 1120
nm
Radiant sensitive area (typ) A 0.675 mm2
Dimensions of chip area (typ) L x W (typ) 1.02 x
1.02
mm x
mm
Half angle (typ) ϕ ± 40 °
Photocurrent of collector-base photodiode
(λ = 950 nm, Ee = 0.5 mW/cm2, VCB = 5 V)
(typ) IPCB 1.8 μA
Photocurrent of collector-base photodiode
(EV = 1000 lx, Std. Light A, VCB = 5 V)
(typ) IPCB 5.5 μA
Capacitance
(VCE = 0 V, f = 1 MHz, E = 0)
(typ) CCE 23 pF
Capacitance
(VCB = 0 V, f = 1 MHz, E = 0)
(typ) CCB 39 pF
Capacitance
(VEB = 0 V, f = 1 MHz, E = 0)
(typ) CEB 47 pF
Dark current
(VCE = 25 V, E = 0)
(typ (max)) ICE0 20 (≤ 100) nA